Material removal method for forming a structure

ABSTRACT

Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the material on a semiconductor substrate. The material, which has uniform stress therein, is then masked, and the stress in a portion of the material is reduced, such as by implanting ions into an unmasked portion. The mask is removed, and the high stress masked portion of the material is selectively removed, preferably by an etching process. The low stress portion of the material remains and forms a shaped structure. One preferred selective etching process uses a basic etchant. The various methods are used to form raised shaped structures, shaped openings, polysilicon plugs, capacitor storage nodes, surround-gate transistors, free-standing walls, interconnect lines, trench capacitors, and trench isolation regions.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation of U.S. patent applicationSer. No. 09/205,989, filed on Dec. 4, 1998, which is acontinuation-in-part of U.S. patent application Ser. No. 08/818,660,filed on Mar. 14, 1997, both of which are incorporated herein byreference.

BACKGROUND OF THE INVENTION

[0002] 1. The Field of the Invention

[0003] The present invention relates to methods of patterning a volumeof silicon-containing material on a semiconductor substrate. Moreparticularly, the present invention relates to methods of forming shapedstructures from a volume of silicon-containing material on asemiconductor substrate using ion implantation and an etching processwhich is selective to either implanted silicon-containing material or tounimplanted silicon-containing material. The present invention isparticularly useful for forming shaped silicon-containing materialstructures such as polysilicon plugs, interconnect lines, transistorgates, trenches, and capacitor storage nodes in an efficient manner andwith a high degree of control over the resulting profile of the shapedstructure.

[0004] 2. The Relevant Technology

[0005] In the context of this document, the term “semiconductorsubstrate” is defined to mean any construction comprising semiconductivematerial, including but not limited to bulk semiconductive material suchas a semiconductive wafer, either alone or in assemblies comprisingother materials thereon, and semiconductive material layers, eitheralone or in

[0006] Integrated circuits on electronic chips provide the logic andmemory of computers and other intelligent electronic devices. Theseintegrated circuits have advanced to a highly functional level to thebenefit of the computers and other intelligent electronic devices. Thevast functionality of integrated circuits is also being provided at acost that is economical, allowing the computers and intelligentelectronic devices to be provided to consumers at affordable prices.Integrated circuits are currently manufactured by an elaborate processin which semiconductor devices, insulating films, and patternedconducting films are sequentially constructed in a predeterminedarrangement on a semiconductor substrate. The conventional semiconductordevices which are formed on the semiconductor wafer include capacitors,resistors, transistors, diodes, and the like. In advanced manufacturingof integrated circuits, hundreds of thousands of these semiconductordevices are formed on a single semiconductor wafer.

[0007] The computer and electronics industry is constantly under marketdemand to increase the speed and functionality and to reduce the cost ofintegrated circuits. One manner of accomplishing this task is byincreasing the density with which the semiconductor devices can beformed on a given surface area of a semiconductor wafer. In order to doso, the semiconductor devices must be decreased in dimension in aprocess known as miniaturization. The challenge in miniaturizingintegrated circuits is to do so without greatly increasing the cost ofthe processes by which integrated circuits are manufactured.

[0008] Accordingly, one aspect of integrated circuit manufacturing thatis in need of improvement is the complexity of the processes by whichintegrated circuits are manufactured. As integrated circuits have becomeincreasingly complex, processing steps for forming the integratedcircuits have multiplied in length. The number of fabrication processsteps has also increased in proportion to the increased complexity ofthe integrated circuits. It is axiomatic that, as integrated circuitmanufacturing processes increase in complexity, the cost of productionof the integrated circuits correspondingly increases. Accordingly, inorder to maintain an affordable cost of production of the improved andmore functional computers and other intelligent electronic devices, newmethods for manufacturing integrated circuits are needed which aresimpler and more efficient, which assist in the miniaturization process,and which do not compromise integrated circuit quality or performance.

[0009] One necessary stage of conventional integrated circuitmanufacturing processes is the formation of shaped structures which areused to form the semiconductor devices or discrete features of thesemiconductor devices, such as MOS transistor gate regions and capacitorstorage nodes. These shaped structures are generally formed by thepatterning of structural layers on the semiconductor wafer. Thestructural layers are typically patterned with a process which includesdepositing the structural layer, covering the structural layer with aphotoresist mask, and etching away portions of the structural layer thatare not covered by the photoresist mask. The portion or portions of thestructural layer that are covered by the photoresist mask form theshaped structure.

[0010] The photoresist mask through which the structural layer is etchedis conventionally formed by a process known as photolithography.Photolithography generally utilizes a beam of light, such as ultraviolet(UV) light, to transfer a pattern through an imaging lens from aphotolithographic template to a photoresist coating which has beenapplied to the structural layer being patterned. The pattern of thephotolithographic template includes opaque and transparent regions withselected shapes that match corresponding openings and intact portionsintended to be formed into the photoresist coating. Thephotolithographic template is conventionally designed by computerassisted drafting and is of a much larger size than the section of thesemiconductor wafer on which the photoresist coating is to be exposed.Light is passed through the photolithographic template and is focused onthe photoresist coating in a manner that reduces the pattern of thephotolithographic template to the required size on the wafer. Forpositive photoresist the portions of the photoresist coating that areunmasked are developed away.

[0011] The resolution with which a pattern can be transferred to thephotoresist coating from the photolithographic template place limitsupon feature sizes that can be created. The dimensions of the openingsand intact regions of the photoresist mask, and consequently thedimensions of the shaped structures that are formed with the use of thephotoresist mask, are correspondingly limited. Photolithographicresolution limits are thus a barrier to further miniaturization ofintegrated circuits. Accordingly, a need exists for an improved methodof forming shaped structures having feature sizes smaller than 0.2microns.

[0012] As an example of one such shaped structure which is in need ofbeing formed with reduced size is an ovonic cell of a programmableresistor. An ovonic cell is a region of chalcogenide material that has aresistance which is programmable by an electrical charge passed throughthe ovonic cell. Generally, the ovonic cell is formed by etching out anopening from a volume of material, and thereafter depositing thechalcogenide material into the opening. As a high charge density is mostsuitable for programming the ovonic cell, it is desirable that theopening be formed with a small cross-sectional area, which serves toincrease the density of a charge applied thereto. The opening isconventionally patterned with photolithography. It would be desirable tofind a commercially feasible method of forming the opening with a widthnarrower than about 0.2 microns.

[0013] Certain alternative methods to photolithography for formingshaped structures of semiconductor devices with higher resolution thanis possible with photolithography do currently exist, but thesealternative methods have certain drawbacks and limitations which keepthem from being widely employed. For example, one such alternativemethod is referred to as a disposable spacer flow process. Thedisposable spacer flow process involves initially forming a sacrificialblock of material and then forming spacers at the edges of thesacrificial block of material. The sacrificial block of material issituated such that the spacers are formed in the locations whereresulting high resolution shaped structures are to be located. Once thespacers are formed, the sacrificial block of material is removed and thespacers remain to form the shaped structures. As photolithography is notused in forming the spacers, the spacers are not restricted by currentphotolithography resolution limitations, and can be formed withdimensions less than or equal to 0.2 microns.

[0014] One problem with the disposable spacer flow process, however, isthat it is limited in the types of shaped structures that can be formedthereby. Generally, such shaped structures must be of a single width.That is, when a sub-photolithography feature, such as an interconnectline, is formed with the disposable spacer flow process at asub-photolithographic resolution width, the entire interconnect linemust be of sub-photolithographic resolution width. The interconnect linecannot then be connected with structures of greater size without furtherdeposition and masking steps to form wider portions of the interconnectlines to which the wider structures can be connected.

[0015] There is a need currently existing in the art for a methodwhereby a shaped structure, such as a semiconductor device feature, canbe formed in a manner which is simpler and more efficient than currentexisting process flows. From the prior discussion, it is apparent thatsuch a method would be additionally beneficial if it could be used toform the shaped structure with reduced dimensions from those that can beachieved with conventional photolithography and in a manner that is moreflexible than photolithography-alternatives such as the disposablespacer flow.

[0016] Etching processes that selectively etch insulating surfacesefficiently are common. Less common are etching processes that etchconducting layers efficiently and with flexibility. One type ofstructural layer that is frequently used in forming shaped structures,and particularly shaped structures that are conductive to electricity,is polysilicon. Polysilicon is frequently used in integrated circuitformation and is preferred, in part, because it is easily deposited.Deposition of polysilicon is typically conducted with the use ofchemical vapor deposition (CVD) which is typically conducted in adeposition chamber with a chemical reaction involving the pyroliticdecomposition of a precursor material such as silane, disilane, ordichlorosilane.

[0017] In order to form a shaped structure from polysilicon, thepolysilicon is deposited as a structural layer and is then patterned.Patterning of a layer of polysilicon is conventionally accomplished witha process that involves photoresist patterning and thus theabove-discussed shortcomings attendant thereto. Conventional processesfor patterning polysilicon also generally involve dry etching with aplasma etching process, which also has certain shortcomings that will bediscussed below.

[0018] Generally, when etching to form a shaped structure, it isdesirable to be able to etch orthogonally into the material beingetched. Such an etching process is referred to as an anisotropic etchingprocess. Anisotropic dry etching is a form of etching in which thesemiconductor wafer is bombarded with ions generated by a plasma that isformed in a flow of one or more etchant gases. Typically, one or morehalocarbons and/or one or more other halogenated compounds are used asthe etchant gas. For example, CF₄, CHF₃ (Freon 23), SF₆, NF₃, and othergases are conventionally used as the etchant gas. Additionally, gasessuch as O₂, Ar, N₂, and others are also added to the gas flow. Theparticular gas mixture used depends on, for example, the characteristicsof the material being etched, the stage of processing, the type ofetching system being used, and the desired etch characteristics, such asetch rate and degree of anisotropy.

[0019] The anisotropic nature of dry etching is desirable, but it hasthe drawback of not being highly selective to different types of layers.Because of this drawback, it is difficult to precisely terminate a dryetching process at a desired depth to form a shaped structure with asharp profile. Also, the patterns that can be formed with a singlephotoresist masking and dry etching step are limited to a single depth,and to the patterns that can be formed with photoresist. Consequently,forming a shaped structure having a complicated profile requiresmultiple repeated masking and dry etching steps, which drives up cost.Therefore, it is desirable to design a more controllable etchingprocess, capable of patterning a structural layer such as a polysiliconlayer anisotropically, yet with greater control of feature size andprofile, and at a low cost.

[0020] Such an improved method would also provide numerous collateraladvantages in addition to those discussed above. For instance, in orderto increase the functionality of the integrated circuit, it would bebeneficial if an improved method could be provided that imparts aflexibility to the types of profiles of the shaped structures that canbe formed thereby. It would also be beneficial if the improved methodsimplified the process flows of certain semiconductor device formationprocesses in order to meet the demand for reduced cost discussed above.In order to further illustrate these and other needs of integratedcircuit manufacturing processes, several representative conventionalprocess flows and their limitations will be discussed herein.

[0021] A first representative example of a process flow in need ofimprovement is discussed below. In particular, it is necessary atseveral stages during an integrated circuit manufacturing process toform openings in an insulative layer of material. Conductive material isdeposited into the openings in order to make electrical contact tounderlying semiconductor devices or discrete features of semiconductordevices. Generally, an opening through an insulating layer exposing anactive region is referred to as a contact opening, while an openingthrough an interlevel dielectric layer is referred to as a via opening.The term interconnect structure opening will be used herein tocollectively refer to such openings through an insulative layer. Contactopenings and via openings are filled with a conductive material to forma contact or via. A contact or via opening filled with polysilicon isgenerally referred to as a polysilicon plug. As used herein, the terminterconnect structure will be used to collectively refer to conductivestructures such as contacts, vias, and plugs that electrically connectdiscrete semiconductor device features located on differing levels of asemiconductor wafer.

[0022] To form an interconnect structure opening or another such openingthrough an insulating layer under conventional process flows, aphotoresist mask is formed over the insulating layer and is patterned toleave exposed the area above the location of the insulating layer wherethe interconnect structure opening is intended to be formed. Material isthen removed from the insulative layer to form the opening with anetching process which, in current conventional process flows, istypically the dry etching process discussed above.

[0023] The dry etching process has proven problematic, as discussedabove, due to its lack of selectivity to different types of materials.In forming interconnect structures with a high density, high aspectratio interconnect structure openings are required. The aspect ratio ofan opening, as used herein, refers to the ratio of the primary verticaldimension of the opening divided by the primary horizontal dimension ofthe opening. Forming interconnect structures with a high aspect ratiorequires a high selectivity of the etching process so that the etchingprocess does not over etch, such as into an underlying siliconsubstrate. A measure of selectivity is typically achieved with the useof a silicon nitride etch barrier layer. Nevertheless, as aspect ratiosincrease, it is increasingly difficult to consistently form interconnectstructure openings with high aspect ratios using conventional dryetching processes.

[0024] Conventional dry etching processes also exhibit poor uniformity,as it is difficult to uniformly etch the entire wafer surface withconventional dry etching processes. Yet another problem associated withdry etching is that it is difficult to dry etch surfaces which are notsmooth and have a nonuniform topography. When dry etching suchinterconnect structure openings, uniformity problems occur in which opensurfaces are etched faster than recessed surfaces, and in which theselectivity of the dry etching process varies for the depth of thefeature being etched. Thus, a high selectivity is difficult to maintainin surfaces with a nonuniform topography.

[0025] A further limiting factor in interconnect structure openingformation is the difficulty involved in masking prior to etchinginterconnect structure openings. The mask is formed with openings forthe interconnect structures that are extremely small when forming highdensity contact openings, which makes it difficult to correctly alignthe mask openings to the proper locations on the semiconductorsubstrate.

[0026] To complete an interconnect structure once the interconnectstructure opening is formed, the interconnect structure opening isfilled with a metal such as aluminum or tungsten. Filling theinterconnect structure opening with metal causes additional problems,however, in that aluminum and tungsten do not form a highly conductiveinterface with an underlying epitaxial silicon of an active region.Aluminum diffuses into the active region and can form conductive spikesthat short out the active region. Tungsten tends to chemically react andleave voids at the active region that reduce the conductivity of theinterconnect structure. Consequently, when using the aluminum ortungsten as filler materials, elaborate steps of forming a liner layermust be conducted. Formation of the liner layer also poses difficulty,however, as the deposition of the liner layer tends to narrow thecontact opening, making it difficult to effectively deposit the fillermaterial.

[0027] One type of interconnect structure used to overcome the problemsassociated with filling the interconnect structure opening is thepolysilicon plug. To form a polysilicon plug, an insulating layer isfirst formed over a semiconductor device feature which is to be providedwith electrical communication by the polysilicon plug. The semiconductordevice feature typically comprises an active region of a transistor. InMOS transistors, the active region is a source/drain region. Once theactive region is formed, an insulating layer such as borophosphosilicateglass (BPSG) is subsequently formed, and is then reflowed. A contactopening is then etched through the insulating layer usingphotolithography and dry etching. The contact opening is subsequentlyfilled with polysilicon. The polysilicon is typically deposited bychemical vapor deposition as a blanket layer of polysilicon over theentire insulating layer. The portion of the blanket polysilicon layerextending above the insulating layer is then removed using aplanarization process such as CMP or a dry etch. Alternatively, theportion of the polysilicon layer situated above the polysilicon plug canbe removed by masking the polysilicon and etching the remainder of thepolysilicon layer away.

[0028] Polysilicon plugs are advantageous in that they form a highlyconductive interface to the underlying crystalline silicon of the activeregion, which thereby overcomes the diffusion problems of interconnectstructure formation processes that use metals for the conductive filingmaterial. On the other hand, polysilicon plugs are problematic in thatthe dry etching process discussed above must still be conducted in theformation of the interconnect structure opening in which the polysiliconplug is formed. Conventional polysilicon plug formation processes arecomplex. Such complexity restricts throughput and increases theopportunity for error, thereby driving up integrated circuit fabricationcosts. Consequently, a need also exists for a method wherebyinterconnect structures, and especially polysilicon plugs for highaspect ratio interconnect openings, can be formed efficiently and simplyand without the need for dry etching to form a high aspect ratiointerconnect structure opening.

[0029] A further shaped structure which is frequently formed inintegrated circuit manufacturing is the capacitor. The capacitor isformed with a storage node, a cell plate, and an intervening dielectriclayer. The storage node and cell plate are frequently formed frompolysilicon. The polysilicon of the storage node and the cell plate aregenerally deposited separately and are patterned by conventionalphotolithography and dry etching. An intervening dielectric layer isformed between the formation of the storage node and the cell plate,typically by growth of silicon dioxide through exposure to oxygen.

[0030] An important consideration of forming capacitors in integratedcircuits is surface area. A larger surface area of the storage node andupper capacitor cell plate provides greater capacitance. Balancedagainst this need is the competing requirement that the capacitor occupya minimum of space on the silicon substrate of the semiconductor wafer.One manner in which the prior art has approached capacitor formation inorder to obtain a greater surface area without increasing the spaceoccupied on the silicon substrate is to form the capacitor at a distanceabove the silicon substrate. When so doing, one of the storage node andthe cell plate are typically wrapped around the other in a compact area,forming what is known as a stacked capacitor. One problem common withthe various configurations of stacked capacitors and the processes usedto form them is that the processes are generally complicated andlengthy, increasing the opportunities for defect conditions to occur anddriving up cost. Consequently, a method is needed for forming a stackedcapacitor with a large surface area yet occupying a minimum of space onthe silicon substrate in a simple and efficient manner. It is alsodesirable to gain greater charge storage area by integrally forming thestacked capacitor storage node and the underlying interconnectstructure.

[0031] An additional problem attendant to forming a stacked capacitor isthat the stacked capacitor must be linked in electrical communication toan active region on the silicon substrate underlying the capacitorstorage node. It is critical in maintaining a high speed of theintegrated circuit that the stacked capacitor maintain a high rate ofcharge retention. This is particularly so in forming integrated circuitsthat provide memory functions, such as dynamically refreshable randomaccess memory (DRAM) integrated circuits. In order to maintain a highcharge retention in the storage node, the stacked capacitor is generallyseparated from the silicon substrate.

[0032] Forming an interconnect structure from an active region on asilicon substrate to a stacked capacitor, however, poses certaindifficulties. For instance, conventional methods of forming interconnectstructures electrically connecting the storage node with the underlyingactive region typically involve forming an interconnect structureopening of an extended depth and then filling the interconnect structureopening, typically with polysilicon. The processes which do so, however,are difficult to conduct, as they have narrow process windows forcorrectly controlling all process parameters such that a defectcondition does not occur. For instance, an interconnect structureopening with an aspect ratio of over two to one may be difficult toaccomplish with standard dry etching processes.

[0033] A further semiconductor device for which an improvedmanufacturing process is needed is the MOS transistor. The transistor isthe mainstay of modern integrated circuit fabrication, and integratedcircuits such as microprocessors often utilize millions of transistorsin a single chip. Currently, the MOS transistor is the most common typeof transistor in integrated circuit formation. Greater functionality isobtained from an integrated circuit by forming a greater number oftransistors in the same amount of space on an integrated circuit. Thus,a method is needed that forms a transistor which occupies less surfacearea of the silicon substrate of the semiconductor wafer.

[0034] It is also desired that transistors operate at lower voltagelevels. One barrier to the formation of MOS transistors that operate atlower voltage levels is the channel length of MOS transistors. Thechannel length is generally determined by the width of a gate region ofthe MOS transistor being formed. The width of the gate region is, inturn, limited in conventional manufacturing processes byphotolithography resolution limits as discussed above. The dimensions ofthe gate region also determines, to an extent, the amount of surfacearea that the transistor occupies. Accordingly, an improved process isneeded which can manufacture transistors on integrated circuits withreduced gate length and with lower operational voltage levels.

[0035] The formation of transistors is also a complicated process,requiring numerous steps. The high number of steps required increasesintegrated circuit manufacturing process costs, reduces throughput, andpresents more opportunities for error to occur. Therefore, a method forstreamlining the transistor formation process is also needed.

[0036] Another shaped structure for which an improved method offormation is needed is a shallow trench that is often etched into asilicon substrate and which is used for forming semiconductor devicessuch as a trench isolation region and a trench capacitor. A method isneeded of forming a trench capacitor that has an adequate volume and yetwhich does not occupy a large amount of surface area of the siliconsubstrate in order to provide high capacitance of the trench capacitor.A method of forming a trench with adequate volume would also improve atrench isolation region and help to prevent cross-talk current leakagebetween source/drain regions of MOS transistors that are typicallyformed on either side of the trench isolation region.

[0037] A further shaped structure that is frequently used in theconstruction of integrated circuits is the interconnect line. The terminterconnect line, as used herein, refers to shaped structures thatelectrically connect semiconductor devices or features of semiconductordevices located on the same level, or that make electricalinterconnections between interconnect structures formed on a singlelevel of the semiconductor wafer, yet which are physically separatedfrom each other. When formed on the top surface of the semiconductorwafer, this structure is referred to simply as a surface interconnectline. When formed beneath the surface of the semiconductor wafer, theinterconnect line is referred to as a local interconnect.

[0038] One consideration in miniaturizing the integrated circuit isobtaining a more dense packing of the interconnect lines within theintegrated circuit. One manner of more densely packing interconnectlines is to form the interconnect lines with a narrower width.Interconnect line widths are currently restricted by the resolutionlimits of conventional photolithography processes. One manner in whichthe prior art has attempted to overcome these limitations is with thedisposable spacer flow process discussed above. As discussed therein,the thickness of the conducting lines formed with the disposable spacerflow cannot be varied. Consequently, when it becomes necessary toconnect the conducting spacers to wider interconnect lines or to deviceswith larger feature sizes, no extra material is provided for doing so.Thus, a more flexible process for providing narrow interconnect lines isneeded.

[0039] Other shaped structures are also frequently used in formingintegrated circuits and would also benefit from an improved etchingprocess whereby shaped structures could be formed with a more flexible,simple, and efficient process. One application for such shapedstructures is in forming micro-machine parts as are commonly used inminiature sensors and actuators. A method is needed for forming suchstructures with a minimum of material deposition, masking, and etchingsteps.

[0040] A further shaped structure used in integrated circuit formationis a free-standing wall that is used to form capacitor storage nodes andother conducting devices. A method that provides flexibility as to thethickness of the resulting free-standing wall, and as to the shape withwhich the free-standing wall can be formed is needed. Such a method thatcan form the free-standing wall efficiently and withsub-photolithographic resolution is also needed.

SUMMARY OF THE INVENTION

[0041] To overcome the foregoing problems existing in the art, and inaccordance with the invention as embodied and broadly described hereinin the preferred embodiments, various methods are provided. In theinvention, selected portions of a volume of a material, preferablycomposed of a silicon-containing material and/or a germanium-containingmaterial, are selectively removed. The removal of the selected portionswill preferably be by etching with an etchant, preferably a basicetchant, to form a shaped structure. A basic etchant is defined hereinas an etchant having a pH greater than 7. In general, the distinctionbetween removed and unremoved portions of the volume of material is therespective degree of internal stress. It is believed that the etchantwill remove the high stress portion of the volume of material at ahigher material removal rate than the etchant will remove the lowerstress portion of the volume of material. As such, the high stressportion will be removed and than low stress portion will not be removed.

[0042] The invention is directed towards a volume of a material that isformed upon on a semiconductor substrate. The volume of the material isto have uniform stress throughout. The stress in a first portion of thevolume of the material is reduced without reducing the stress in asecond portion of the volume of the material. Preferably, the stress inthe first portion is reduced by bombarding the first portion with atomicparticles, such as by ion implantation. The second portion is thenselectively removed. Preferably, the second portion is removed in anetch process. The etch process is performed upon the volume of thematerial, preferably with an basic etchant. Due to the respective degreeof stress in each of the first and second portions, the etch will have alower material removal rate for first portion than for the secondportion. In general, regardless of the respective degree of any dopantconcentration in the removed and unremoved portions prior to such stressreduction such as by bombardment or implantation, the distinctionbetween removed and unremoved portions of the volume of material is therespective degree of stress.

[0043] In the following summary description of various inventivemethods, the selective removal of a volume of a silicon-containingmaterial is described. It is intended, however, that the invention isalso applicable to a volume of a germanium-containing material.

[0044] In a first method, a selected portion of a volume ofsilicon-containing material located on a semiconductor substrate isremoved in such a manner as to leave a shaped opening in the layer ofsilicon-containing material. Initially, a layer of silicon-containingmaterial, which in one embodiment comprises a polysilicon layer, isprovided on a semiconductor substrate. A masking substrate is formed onthe layer of silicon containing material that masks at least one regionof the layer of silicon-containing material and leaves a second regionof the layer of silicon-containing material unmasked.

[0045] Ions of a selected type are then implanted into the unmaskedportion of the layer of silicon-containing material. The ions are of atype that is selected in accordance with an etching process which isselective to implanted silicon-containing material in a manner whichwill hereafter be discussed. In order to reduce the dimensions of theshaped opening from the dimensions of the masking substrate, the ionscan be implanted with an angle of implantation other than orthogonal tothe semiconductor substrate, causing the ions to be implanted tinder theedges of the masking substrate. Implanting the ions with an angle ofimplantation other than orthogonal to the semiconductor substrate willresult in a reduction in the dimensions of the shaped opening from thedimensions of the masking substrate, while an angle of implantationorthogonal to the surface of the semiconductor substrate results in nosubstantial dimension change.

[0046] Other ion implantation parameters, such as ion type, implantationdose, and implantation energy can also be appropriately selected tofurther tailor the dimensions of the implanted region and thereby theresulting shaped opening. The impermeability to ions of the selectedmasking material also has an effect in sculpting the resulting shapedstructure. Diffusing the ions after ion implantation with a heattreatment deepens the penetration of the ions into the polysilicon layerand further serves to tailor the profile of the resultant shapedfeature, though it is generally preferred not to heat treat in order tomaintain a sharper profile of the implanted ions in the layer ofsilicon-containing material.

[0047] Additionally, in order to vary the dimensions in a uniformmanner, the ion implantation operation can be conducted in multipleimplantation stages with one ion implantation parameter being varied foreach implantation stage. By varying the angle of implantation for eachof the multiple implantation stages, for instance, deep shaped openingscan be formed with substantially anisotropic sidewalls.

[0048] The masking substrate in a subsequent procedure is stripped fromthe layer of silicon-containing material, and the layer ofsilicon-containing material is then etched with an etching process. Theetching process etches portions of a volume of silicon-containingmaterial that are not implanted with ions to a threshold concentrationat a faster rate than the etching process etches portions of the volumeof silicon-containing material that are implanted with ions up to thethreshold concentration. Such an etching process is referred to in thisdocument as an etching process which is selective to implantedsilicon-containing material. The exact concentration which constitutesthe threshold concentration varies in accordance with the particularetching process and the etching process parameters. Nevertheless, forany such etching process, silicon-containing material implanted withions beyond the threshold concentration is not substantially removed bythe etching process which is selective to implanted silicon-containingmaterial, and silicon-material implanted to less than the thresholdconcentration is substantially removed.

[0049] In etching processes that are selective to low stress portions ofa volume of a material and that etch high stress portions of the volumeof the material, preferred etchants include an etchant having a pHgreater than 7 and more preferably not less than 9, an organic base, aninorganic base, an etchant that contains ammonia, a basic etchant thatdoes not contain Group I or Group II metals, tetraethylammoniumhydroxide, tetrabutylphosphonium hydroxide, tetraphenylarsoniumhydroxide, KOH, NaOH, and tetramethyl ammonium hydroxide (TMAH).Preferably, the etched material is a silicon-containing material or agermanium containing material. Although the invention discussed belowexpands upon the use of TMAH as an etchant, the foregoing etchants arealso contemplated in processes of forming the various structuresdescribed below.

[0050] Where the etching process is selective to implantedsilicon-containing material and the etchant is TMAH, a wet etch ispreferred. The TMAH wet etch is typically administered as an etchantsolution into which the semiconductor wafer is immersed. Preferably, theetchant solution comprises about 1 to about 10 weight percent of TMAH indeionized water. More preferably, the etchant solution comprises about2.5 weight percent of TMAH in deionized water.

[0051] The TMAH wet etch has been found to etch silicon-containingmaterial implanted to less than the threshold concentration of ions atleast two times faster than it etches silicon-containing material thatis implanted to the threshold concentration of ions. Differences in etchrates of 20 to one and 40 to one are easily achievable, and a differencein etch rates of up to 60 to one can be obtained according to TMAHconcentrations and the selection of other ion implantation and etchingprocess parameters.

[0052] When conducting the TMAH wet etch for polysilicon, the thresholdconcentration of implanted ions at least to polysilicon is implanted ispreferably in a range from about 1×10¹⁵ ions per cm³ ofsilicon-containing material to about 1×10²² per cm³ ofsilicon-containing material. More preferably, the thresholdconcentration is in a range from about 5×10¹⁸ ions per cm³ ofsilicon-containing material to about 5×10¹⁹ ions per cm³ ofsilicon-containing material. Most preferably, the thresholdconcentration is about 1×10¹⁹ ions per cm³ of silicon-containingmaterial.

[0053] Common dopants such as boron and phosphorous are suitable for useas the implanted ions, and in addition, other common dopant ions andeven ions that are not commonly considered to be dopant ions aresatisfactory. For instance, ions can also be successfully used inconjunction with the TMAH wet etch that do not electrically activate orotherwise alter the electrical properties of the silicon-containingmaterial. Examples of such ions are silicon ions and argon ions.

[0054] As a result of the etching process which is selective toimplanted silicon-containing material, a selected portion of thepolysilicon layer that is not implanted up to the thresholdconcentration of ions is etched away to form a shaped opening. Etchingprocess parameters, such as the duration of the etch, can also be variedto further tailor the shaped opening. In one example of the use of ashaped opening, an ovonic cell of a programmable resistor is formed byfilling the shaped opening with chalcogenide material.

[0055] In a related embodiment, the polysilicon layer with the shapedopening therein is used as a hard mask to pattern an underlying layer.Thus, for example, a layer of material other than a silicon-containingmaterial such as a layer of silicon nitride is initially formed underthe layer of silicon-containing material, and the first method iscarried out to create a shaped opening in the layer ofsilicon-containing material. An etching process is then conducted toetch the layer of silicon nitride through the shaped opening to form ashaped opening in the layer of silicon nitride.

[0056] Thus, a method is provided for forming shaped openings which aresimple and efficient. The method can be used to form shaped openingswith smaller dimensions than can be formed with conventionalphotolithography processes. Greater flexibility is provided as to thepossible profiles of the resulting shaped openings, thereby increasingthe types of semiconductor devices that can be formed thereby, andconsequently, the potential functionality of the integrated circuitformed with the first method.

[0057] In a second method of the present invention, a shaped structureis formed from a layer of silicon-containing material on a semiconductorwafer with an etching process that, converse to the etching process ofthe first method, etches silicon-containing material that is implantedwith ions up to a threshold concentration at a substantially faster ratethan it etches silicon-containing material that is not implanted withions up to the threshold concentration. The second method initiallycomprises providing a layer of silicon-containing material, such as apolysilicon layer, on a semiconductor substrate. Thereafter, a maskingsubstrate is formed over the layer of silicon-containing material. Themasking substrate is formed so as to cover at least a portion of thelayer of silicon-containing material and to leave a portion of the layerof silicon-containing material unmasked.

[0058] Subsequently, ions are implanted into the unmasked portion of thelayer of silicon-containing material. The ions are of a selected typechosen in accordance with an etching process which is selective tounimplanted silicon-containing material. In one embodiment, the ionscomprise dopant ions such as phosphorous or boron ions. As with thefirst method, the ion implantation operation can be conducted with ionimplantation parameters selected to tailor the profile of the portion ofthe layer of material that is implanted to the threshold concentration,and thereby of the resulting shaped structure. The ion implantationoperation can also be conducted in multiple implantation stages with theion implantation parameters varied for each of the multiple implantationstages as previously discussed for the first method.

[0059] After the ion implantation operation is conducted, an initialetching process is thereafter conducted that etches the layer ofsilicon-containing material substantially anisotropically to partiallyreduce the height of the unmasked portion of the layer ofsilicon-containing material.

[0060] Once the initial etching process is conducted, the layer ofsilicon-containing material is etched with an etching process whichetches portions of the layer of silicon-containing material that areimplanted with ions up to a threshold concentration at a substantiallyfaster rate than it etches portions of the layer of silicon-containingmaterial that are not implanted with ions up to the thresholdconcentration. Such etching processes are referred to herein as anetching process which is selective to unimplanted silicon-containingmaterial. The concentration of ions which constitutes the thresholdconcentration is determined by the particular etching process which isselective to unimplanted silicon-containing material that is used and bythe selection of the ion implantation and etching parameters in a mannerthat will be readily understood from this disclosure by those skilled inthe art.

[0061] In one embodiment given by way of example, the etching processwhich is selective to unimplanted silicon-containing material uses anacidic etchant such as commercially available hydrofluoric acid, or itmay use a nitric acid etchant solution. Also, a KOH etching chemistrycan be used together with a counter-doping of the polysilicon layer.

[0062] The result of the etching process which is selective tounimplanted material is a raised shaped structure formed in the locationof the portion of the layer of silicon-containing material that wasmasked and thus implanted to less than the threshold concentration ofions. In the embodiment wherein ions are implanted at an angle otherthan orthogonal to the surface of the semiconductor substrate, theshaped structure has dimensions that are reduced from the dimensions ofthe masked portion of the layer of silicon-containing material.

[0063] The raised shaped structure can also be used as a sacrificialhard mask for etching an underlying layer. When using the raised shapedstructure as a sacrificial hard mask, an underlying layer is formedprior to depositing the layer of material. The raised shaped structureis then formed in the manner discussed above, and serves as a hard maskwhen etching the underlying layer. The underlying layer is typicallyetched anisotropically, with an etching process such as dry etching. Theraised shaped structure is removed after etching the underlying layer,and a portion of the underlying layer remains in substantially the samelocation and with substantially the same dimensions as the raised shapedstructure. Once again, these dimensions can be smaller than those ofwhich conventional photolithography is capable.

[0064] A third method of the present invention is used to form aninterconnect structure. Under the third method, a charge conductingregion such as an active region is first provided on a semiconductorsubstrate. A layer of silicon-containing material, which in oneembodiment is a polysilicon layer, is then formed over the chargeconducting region. The layer of silicon-containing material is thenmasked with a masking substrate that is patterned so as to leave maskeda portion of the layer of silicon-containing material that is locatedover the active region.

[0065] After the masking substrate is applied, ions are implanted intothe unmasked portion of the layer of silicon-containing material. Theions are selected, as discussed above for the first method, inconjunction with an etching process which is selective to unimplantedsilicon-containing material. The ion implantation process parameters canbe varied to shape the resulting interconnect structure. Also, the ionimplantation operation can be conducted in multiple implantation stagesas discussed above.

[0066] After the ion implantation operation is concluded, the maskingsubstrate is removed, and the layer of silicon-containing material isetched with the etching process which is selective to unimplantedsilicon-containing material. As a result, the portion of the layer ofsilicon-containing material that was underlying the masking substrate isremoved, and the portion of the layer of silicon-containing materiallocated above the active region, which was masked and thus wasunimplanted with ions, remains and forms the interconnect structureelectrically connected to the active region.

[0067] The interconnect structure is, as a result of the method of thepresent invention, constructed in a more simple and efficient mannerthan interconnect structures constructed with the conventional methodsdiscussed above. Accordingly, integrated circuit manufacturingthroughput is increased and integrated circuit manufacturing cost isreduced. The need for a dry etching process and the problems associatedtherewith, as discussed above, are also eliminated.

[0068] A fourth method of the present invention is used to form astacked capacitor storage node. Under the fourth method, a chargeconducting region is initially provided on a semiconductor substrate,above which the stacked capacitor storage node is to be formed. In oneembodiment, the charge conducting region comprises an active regionformed in a silicon substrate of a semiconductor wafer. Once the activeregion is provided, a layer of silicon-containing material is thenformed over the active region. In the embodiment to be discussed, thelayer of silicon-containing material comprises a polysilicon layer.

[0069] The polysilicon layer is subsequently masked with a maskingsubstrate that is patterned so as to leave a portion of the polysiliconlayer located above the active region unmasked. The masking substrate isformed with an island having two edges, each located above and to oneside of the active region.

[0070] After the masking substrate is applied and patterned, spacers ofsilicon-containing material are formed on the polysilicon layer, oneadjacent each of the two edges of the masking substrate. The spacers areformed with a conventional spacer formation process, and their shape andheight are selected in accordance with the needs of the stackedcapacitor storage node being formed.

[0071] Thereafter, ions are implanted into the unmasked portion of thepolysilicon layer, substantially in the manner discussed above for thefirst method. Also, the ion implantation operation can be conducted inmultiple stages as discussed above.

[0072] After the ion implantation operation is concluded, the maskingsubstrate is removed and the polysilicon layer is etched with theetching process which is selective to implanted silicon-containingmaterial in the manner discussed above for the first method. The etchingprocess which is selective to implanted silicon-containing materialremoves the portions of the polysilicon layer that were underlying themasking substrate and allows the portion of the polysilicon layerlocated above the active region that was unmasked to remain. The spacersalso remain and extend upward therefrom to form the stacked capacitorstorage node.

[0073] In an alternate embodiment of the fourth method, an interconnectstructure is formed concurrently with stacked capacitor storage nodeformation. The procedure is substantially the same as that of the firstembodiment wherein only a stacked capacitor storage node is formed, withthe exception that in the location where an interconnect structure is tobe formed, spacers are not formed above the portion of the polysiliconlayer where the interconnect structure is to be located. The ionimplantation process parameters can be varied to shape the resultinginterconnect structure.

[0074] The fourth method forms a stacked capacitor storage node with anintegral storage node and capacitor base thereby providing a greaterstorage area for greater charge retention. The stacked capacitor storagenode can be formed concurrently with the capacitor base, therebyeliminating a separate interconnect structure formation step.Consequently, the number of masking and etching steps is decreased,which in turn increases the throughput, reduces the cost, and eliminatesopportunities for error in the integrated circuit fabrication process.The fourth method also introduces greater flexibility to the stackedcapacitor storage node formation process, as polysilicon plugs can beformed over active regions concurrently with the formation of thestacked capacitor storage node.

[0075] A fifth method is provided herein and is used to form aninterconnect structure in a CMOS process flow. Under the fifth method, aconventional CMOS integrated circuit formation process is followed up tothe point of transistor gate regions formation. In so doing, a siliconsubstrate is formed with a PMOS portion and an NMOS portion. At leastone gate region is formed on each of the PMOS portion and the NMOSportion. Insulating spacers may also be formed around the gate region ofthe NMOS portion. The PMOS portion is then masked with a first maskingsubstrate.

[0076] Dopant ions of a suitable type are thereafter implanted into theNMOS portion to create at least one active region therein. Thereafter,the first masking substrate is removed from the PMOS portion, and alayer of silicon-containing material is deposited over the PMOS and NMOSportions. In the embodiment to be discussed, the layer ofsilicon-containing material is a polysilicon layer.

[0077] Once deposited, the polysilicon layer is masked with a secondmasking substrate. The second masking substrate is patterned so as toleave unmasked a portion of the polysilicon layer located above aselected active region of the NMOS portion.

[0078] Subsequently, ions are implanted into the unmasked portion of thepolysilicon layer. In so doing, the second masking substrate prohibitsions from substantially impinging into and implanting the portions ofthe polysilicon layer underlying the masking substrate. The ionimplantation operation is conducted substantially as described above forthe first method. The second masking substrate is then removed, and thepolysilicon layer is etched with the etching process which is selectiveto implanted silicon-containing material, thereby removing the portionsof the polysilicon layer that were underlying the masking substrate. Theunmasked portion of the polysilicon layer above the selected activeregion of the NMOS portion remains and forms a polysilicon interconnectstructure.

[0079] The ion implantation and etching process parameters can beappropriately selected in the manner discussed in the description of thefirst method above. Once again, the ion implantation operation can beconducted at an angle other than orthogonal to the silicon substrate,and can be conducted in multiple stages. The type of masking substratemay also be varied and the implanted ions can optionally be diffused byheat treatment to further tailor the shape of the resulting interconnectstructure.

[0080] Once the interconnect structure is formed, the NMOS portion iscovered with a masking substrate, and ions are implanted into the PMOSportion to form at least one active region therein.

[0081] Thus, under the fifth method, an interconnect structure is formedin a CMOS process flow that eliminates several steps required byconventional prior art methods. Also, the source/drain regions of theNMOS and PMOS regions are doped without cross-contamination from the ionimplantation or etching processes. The number of masking and etchingoperations is reduced from the conventional CMOS process flow, therebyincreasing throughput of the integrated circuit manufacturing processand ultimately reducing the cost of the integrated circuits formedthereby. The fifth method is also simple and efficient and leadseffectively into contact etch and capacitor formation.

[0082] A sixth method of the present invention is used to form afree-standing wall. The free-standing wall is suitable for use informing a stacked capacitor storage node. Under the sixth method, alayer of silicon-containing material, which is a polysilicon layer inthe embodiment to be described, is initially deposited upon asemiconductor substrate. The polysilicon layer is preferably formed ofintrinsic polysilicon.

[0083] After forming the polysilicon layer, a masking substrate isapplied over the polysilicon layer and is patterned to form a maskisland. A dry etching process is then used to anisotropically remove theexposed portion of the polysilicon layer. The dry etching process formsa polysilicon block out of the polysilicon layer that has surfacedimensions corresponding to the surface dimensions of the island of themasking substrate.

[0084] After the dry etching process is concluded, one or more of thelaterally extending surfaces of the polysilicon block are implanted withions with the masking substrate remaining in place. Following the ionimplantation operation, the masking substrate is removed and an etchingprocess is conducted which is selective to implanted silicon-containingmaterial is conducted. Depending on the shape of the polysilicon blockand the extent of the laterally extending surfaces of the polysiliconblock that is implanted, a variety of differently shaped free-standingwalls can be formed. By forming the polysilicon block with theappropriate shape, for instance, thin and laterally extendingpolysilicon columns can be formed, pairs of which are suitable forforming container capacitors. Thin posts can also be created which arecharacterized as columns of relatively small thickness.

[0085] When the entire periphery of the polysilicon block is implanted,continuously extending free-standing walls are formed. If thepolysilicon block is circular, an annular free-standing wall is formed.The thickness of the resulting free-standing wall is determined by theangle of implantation and the implantation energy of the implanted ions.Consequently, the free-standing wall can have sub-photolithographyresolution thickness dimensions.

[0086] The free-standing wall of the sixth method can be formed with ahigh aspect ratio of which conventional photolithography and etchingmethods are incapable. The capability of forming the free-standing wallwith a variety of shapes adds a flexibility to the integrated circuitformation process. Additionally, the free-standing wall is formed in anefficient manner with a minimum of processing operations, therebymaintaining a high throughput and low cost of the integrated circuitmanufacturing process.

[0087] A seventh method of the present invention is similar to the sixthmethod, and is also used to form a free-standing wall that is suitablefor forming a stacked capacitor storage node. The seventh methodinvolves initially depositing a polysilicon layer as in the sixthmethod, and thereafter applying and patterning a masking substrate overthe polysilicon layer. The masking substrate is as in the seventhmethod, but it is also patterned with an opening to form a correspondingpatterned opening in the polysilicon layer. Directional ion implantationis then conducted to implant ions into the laterally extending surfaceof the opening in the polysilicon layer with the masking substrate inplace. The ion implantation operation is conducted substantially in themanner described above for the first method, and is conducted with anangle of implantation other than orthogonal to the surface of thesemiconductor substrate in order to implant the laterally extendingsurface of the opening in the polysilicon layer. The masking substrateis thereafter removed, and the etching process is conducted which isselective to implanted silicon-containing material which issubstantially in the manner described above in the first method, andresults in a free-standing wall.

[0088] The free-standing wall can be formed with a variety ofconfigurations, depending on the shape of the masking substrate openingand the extent to which the laterally extending surface of the shapedopening in the polysilicon layer is implanted. For instance, by forminga circular masking substrate opening and implanting the entirety of thelaterally extending surface of the opening in the polysilicon layer, anannular free-standing wall can be formed such as is suitable for forminga stacked capacitor storage node or a surround-gate transistor gateregion. Thus, the free-standing wall of the seventh method has similaradvantages to the sixth method, and provides an added flexibility to theintegrated circuit manufacturing process.

[0089] An eighth method of the present invention is used to form asurround-gate MOS transistor. Initially under the eighth method, afree-standing wall is created, preferably in a manner described abovefor either the sixth or the seventh method. The free-standing wall ispreferably continuous, defining a chamber therein and could be of anysuitable shape, including rectangular or hexagonal. The preferred shapeis annular. The free-standing wall is formed on the semiconductorsubstrate over a gate oxide layer, after which a continuous insulatingspacer is formed on either side of the free-standing wall. Dopants arethen implanted into the silicon substrate at the interior of thefree-standing wall and around the exterior of the free-standing wall.The dopants are selected as N-type or P-type dopants, depending onwhether the transistor being formed is an N-channel or P-channeltransistor, respectively. The implanted interior and exterior of thefree-standing wall region form the source/drain regions of thesurround-gate transistor.

[0090] Formed thereby is a surround-gate transistor, with a gate regionformed from the free-standing wall, a source/drain region formed at theinterior of the gate region, and another source/drain region formed atthe exterior of the gate region, surrounding the gate region. A MOStransistor channel extends under the gate region, and has a shortchannel length determined by the thickness of the free-standing wall. Asthe thickness of the freestanding wall is not dependent uponconventional photolithography resolution levels, the MOS transistorchannel can correspondingly be quite short. Preferably, the channel hasa length of less than about 0.25 microns.

[0091] A DRAM memory cell can also be formed under the eighth method. Inso doing, the surround-gate transistor is formed as described, and aword line is connected with the gate of the surround-gate transistor. Alower insulating layer is then formed over the surround-gate transistor.Interconnect structure openings are opened through the lower insulatinglayer down to the source/drain regions of the surround-gate transistor.The interconnect structure openings are filled with conductive materialto form contacts. One contact is constructed extending down to thesource/drain region at the interior of the gate region, and a second isconstructed extending down to the source/drain region at the exterior ofthe gate region.

[0092] In a further procedure of forming the DRAM memory cell, a storagenode is formed over the lower insulating layer, connecting with thecontact extending down to the source/drain region at the interior of thegate region. A dielectric layer is formed over the storage node, and anupper capacitor plate is formed over the dielectric layer. An upperinsulating layer is then formed over the capacitor, and a digit line isformed at the top thereof connected with the contact that extends downto the source/drain region at the exterior of the gate region.

[0093] The MOS surround-gate transistor occupies a minimum of space onthe semiconductor substrate, and is formed in a simpler and moreefficient manner than surround-gate transistors of the prior art. TheMOS surround-gate transistor can be formed with a short MOS transistorchannel, which can be of a length of less than about 0.2 microns. TheMOS surround-gate transistor is easily incorporated into a DRAM memorycell, which, similar to the MOS surround-gate transistor, occupies aminimum of surface area on the semiconductor substrate. The DRAM memorycell also exhibits a low amount of leakage due to the placement of thecapacitor over the center of the MOS surround-gate transistor.

[0094] A ninth method of the present invention is used to form a coneshaped free-Q standing wall that is suitable for use as a stackedcapacitor storage node. Under the ninth method, a layer ofsilicon-containing material, which is a polysilicon layer in theembodiment to be discussed, is initially deposited upon a semiconductorsubstrate. In the discussed embodiment, the semiconductor substrate is asilicon substrate which has gate regions formed thereon to the sides ofactive regions also formed thereon. The polysilicon layer is preferablyformed of intrinsically doped polysilicon. After deposition of thepolysilicon layer, an insulating layer is formed over the polysiliconlayer.

[0095] Once the insulating layer is formed, a masking substrate isdeposited and patterned over the insulating layer. The masking substrateis patterned with an opening at the location wherein the conical stackedcapacitor storage node is to be formed. A dry etching process is thenused to etch the exposed region of the polysilicon layer in a slopingfashion. A conical opening is thereby formed in the polysilicon layerthat tapers down to an active region in the silicon substrate. After thedry etching process is concluded, the masking substrate is removed and asecond polysilicon layer is deposited over the first polysilicon layerand over the insulating layer. The second polysilicon layer is thenimplanted with ions in the manner discussed for the first method aboveto form an implanted region therein.

[0096] The uppermost portion of the second polysilicon layer and theinsulating layer are thereafter removed by planarization. Followingplanarization, the etching process discussed above which is selective toimplanted silicon-containing material is conducted. In substantially thesame manner as described for the first method above, a free-standingwall is thus formed having a high aspect ratio, a conical shape, and asmall area of contact with the underlying active region, therebyoccupying a minimum of space on the silicon substrate.

[0097] The ninth method is advantageous in that it eliminates a maskingand material deposition operation from the prior art stacked capacitorstorage node formation processes, thereby increasing throughput of theintegrated circuit manufacturing process. The integrated circuitmanufacturing process is thereby simplified, increasing yield anddecreasing cost. The ninth method also has a relatively large alignmentprocess window, further increasing yield and further facilitatinggreater miniaturization of the integrated circuit being fabricated.

[0098] A tenth method of the present invention uses the etching processwhich is selective to unimplanted silicon-containing material of thesecond method to form an interconnect structure. In the embodiment to bediscussed, the layer of silicon-conducting material comprises apolysilicon layer. The polysilicon layer is preferably formed ofintrinsic polysilicon. The tenth method initially involves formingactive regions and gate structures on a semiconductor substrate. Alightly doped or undoped polysilicon layer is then formed over the gatestructures.

[0099] Once the polysilicon layer is formed, a masking substrate isapplied over the polysilicon layer and is patterned to cover a portionof the polysilicon layer located above a conducting region that is to beelectrically connected by the polysilicon plug. In the discussedembodiment, the conducting region is an active region. A portion of thepolysilicon layer that is to be removed is left exposed. Afterpatterning the masking substrate, an anisotropic etching process isconducted through the openings in the masking substrate. The anisotropicetching process partially reduces the height of the portion of thepolysilicon layer that is not covered by the masking substrate. Exposedportions of the polysilicon layer are consequently reduced to less thantheir original height.

[0100] An ion implantation operation is subsequently conductedsubstantially in the manner described above for the second method. Thepreferred type of ions to be implanted by the ion implantation processis arsenic ions. An etching process is conducted after implantationwhich is selective to unimplanted silicon-containing material asdescribed for the second method above. Once again, the parameters of theselective etching process and the ion implantation operation can beappropriately selected to tailor the profile of the portion of thepolysilicon layer that is implanted. An interconnect structure isthereby formed, such as a polysilicon plug that is formed in a moreefficient and streamlined manner than the above-discussed methods of theprior art.

[0101] An eleventh method of the present invention uses the etchingprocess which is selective to implanted silicon-containing material ofthe first method as well as a height reduction operation to form aninterconnect structure. Under the eleventh method, a plurality of raisedinsulating surfaces are initially provided on a semiconductor substrate.In the embodiment to be discussed, the raised insulating surfacescomprise a plurality of gate regions. Silicon nitride caps arepreferably formed on the tops of the plurality of gate regions. At leastone charge conducting region, preferably an active region, is alsoprovided between the gate regions at the bottom thereof. A polysiliconlayer is then formed over the active region and the gate regions whichfills in an intervening open area located over the active region andbetween the gate regions.

[0102] In a subsequent procedure of the eleventh method, the height ofthe polysilicon layer is reduced down to the level of the tops of thegate regions, preferably with a planarization process. The planarizationprocess more preferably comprises chemical mechanical planarization(CMP) which stops on the silicon nitride caps formed over the gateregions.

[0103] A masking substrate is, in subsequent procedure, formed over thepolysilicon layer and the gate regions and is patterned with an openingover the portion of the polysilicon layer that overlies the activeregion above which the interconnect structure is to be formed. Theopening in the masking substrate also slightly overlaps the tops of thegate regions. The opening is a thereby self-aligned in that a slightmisalignment of the masking substrate will not result in a defectcondition.

[0104] Ions of a type selected in accordance with the etching processwhich is selective to implanted silicon-containing material, asdiscussed for the first method, are then implanted into a selectedsegment of the polysilicon layer that overlies the active region. Thenitride spacers prevent the ions from being implanted into the gateregions, and consequently also assist in self-alignment.

[0105] The masking substrate is then removed and the etching processwhich is selective to implanted silicon-containing material is conductedin a manner substantially as described above for the first method. Theetching process which is selective to implanted silicon-containingmaterial removes the polysilicon layer except for the selected segmentoverlying the active region that was implanted with ions. The remainingselected segment that is not etched away forms an interconnectstructure. In the discussed embodiment, the interconnect structure is apolysilicon plug that extends from the active region up to the level ofthe tops of the gate regions.

[0106] The eleventh method simplifies the interconnect structureformation process by eliminating the BPSG deposition, reflow, and dryetching steps of the prior art polysilicon plug formation processdiscussed above. The streamlined process increases integrated circuitfabrication process throughput and reduces costs. The problemsassociated with the dry etching process of the prior art and theformation of the high aspect ratio interconnect structure openings arealso avoided.

[0107] A twelfth method of the present invention uses the etchingprocess which is selective to implanted silicon-containing material ofthe present invention and a planarization process which stops on siliconnitride to form a sacrificial interconnect structure. In addition, thetwelfth method further involves the subsequent removal of theself-aligned interconnect structure to form an extended depthinterconnect structure opening.

[0108] Initially in the twelfth method, a sacrificial interconnectstructure is formed, preferably in the manner described above for theeleventh method, and is used as a removable “dummy” in forming anextended depth interconnect structure opening. In the twelfth method, athin insulating layer is formed over a semiconductor substrate surface.A charge conducting region which is to be provided with electricalcontact through the extended depth interconnect structure opening islocated beneath the thin insulating layer, central to a plurality ofraised insulating surfaces. An intervening open area is thus formedabove the charge conducting region in between the plurality of raisedinsulating surfaces.

[0109] Thereafter, a sacrificial interconnect structure is formed in theintervening open area extending from the charge conducting regions tothe tops of the raised insulating surfaces. The sacrificial interconnectstructure is preferably formed in the manner described for the eleventhmethod. Once the sacrificial interconnect structure is formed, a blanketlayer of insulating material is formed over the interconnect structure.

[0110] In one embodiment to be discussed, the semiconductor substrate isa silicon substrate, the charge conducting region is a source/drainregion, the sacrificial interconnect structure is a polysilicon plug,and the raised insulating surfaces are gate regions. The gate regionsare preferably provided at the tops thereof with silicon nitride caps.Once the polysilicon plug is formed over the source/drain region, ablanket layer of insulating material is formed over the polysilicon plugextending over and a distance above the polysilicon plug.

[0111] An interconnect structure opening is then formed through theblanket layer of insulating material extending down to the top of thepolysilicon plug, thereby exposing the top of the polysilicon plug. Inone manner of so doing, a masking substrate is applied and patterned,and an etching process is conducted which etches the material of theblanket layer of insulating material selective to polysilicon. In orderto form the polysilicon plug in a self-aligned manner, the etchingprocess is also preferably selective to the silicon nitride caps at thetops of the gate regions. The interconnect structure opening can beformed wider than the polysilicon plug, as the silicon nitride caps atthe tops of the gate regions will stop the etching process frompenetrating into the gate regions. Consequently, a leeway ofapproximately half the width of the gate structures is provided for thepossibility of misalignment of the interconnect structure opening.

[0112] The polysilicon plug is then removed to expose the underlyingsource/drain region. The polysilicon plug is preferably removed using anetching process that selectively etches polysilicon and does not etchthe blanket layer of insulating material or the material of the gateregion caps. The etching process is also preferably selective to thematerial of the thin insulating layer in order to allow the thininsulating layer to function as an etch barrier and to preventover-etching into the underlying source/drain region. One such etchingprocess uses an etchant comprising a TMAH wet etch. The TMAH wet etchremoves the polysilicon plug selective to the blanket layer ofinsulating material and the silicon nitride caps at the tops of the gateregions.

[0113] Once the polysilicon plug is removed, an extended depthself-aligned interconnect structure opening is formed in the location ofthe polysilicon plug, and extends from the source/drain region up to thetop of the blanket layer of insulating material. The extended depthinterconnect structure opening is in one embodiment filled with aluminumto form an aluminum contact. The extended depth interconnect structureis particularly useful in the formation of a stacked capacitor, where itis desirable that the base of the stacked capacitor be integral to thestorage node of the stacked capacitor. Forming the base of the stackedcapacitor integral to the storage node thereof provides a higher cellcapacitance, as compared to stacked capacitors formed with non-integralpolysilicon plugs of the prior art.

[0114] A thirteenth method of the present invention uses the etchingprocess which is selective to implanted silicon-containing material ofthe first method to form a stacked capacitor storage node that has alarge surface area. The thirteenth method initially involves forming aninterconnect structure extending down through a planarized lowerinsulating layer to a charge conducting region on a semiconductorsubstrate. The interconnect structure is preferably formed in the mannerdescribed in the eleventh method, wherein a polysilicon plug is formedextending down to an active area between a pair of gate regions on asilicon substrate of a semiconductor wafer.

[0115] Once the polysilicon plug is formed, an upper insulating layer isdeposited over the polysilicon plug and the gate regions. The upperinsulating layer is then planarized, and an opening is formed in theupper insulating layer extending down to the tops of silicon nitridespacers located on the tops of the gate regions. The opening overlapsthe silicon nitride spacers, allowing the opening to be self-aligned tothe polysilicon plug that is located between the gate regions. Theopening also exposes the top of the polysilicon plug. The opening ispreferably circular, with a horizontal bottom and vertically extendingsides.

[0116] After the opening is formed, a lower silicon-containing layer isformed over the surface of the opening. The lower silicon-containinglayer is intrinsically doped with impurities that cause the etchingprocess which to etch the lower silicon-containing layer slowly, wherethe etching is selective to implanted silicon-containing materialdiscussed above for the first method. An intermediate silicon-containinglayer, which is only lightly doped or which is not doped, is then formedover the lower polysilicon layer. An upper silicon-containing layer isthen formed over the intermediate silicon-containing layer and is dopedin a similar manner to the doping of the lower insulating layer. Each ofthe lower, intermediate, and upper polysilicon layers preferablycomprise a horizontally extending bottom section and a verticallyextending side section extending upward from the edges of the bottomsection. Each of the lower, intermediate, and upper silicon-containinglayers preferably comprise polysilicon.

[0117] Ions are subsequently implanted into the bottom section of theintermediate silicon-containing layer. In so doing, ions can also beimplanted into the lower and upper silicon-containing layers with nodetrimental effects. The ions of the ion implantation operation arepreferably implanted with an angle of implantation orthogonal to theplane of the substrate, and with a selected implantation energy range.The selected implantation energy range is selected such that portions ofthe lower and upper side sections that extend above the surface of theopening will block the implanted ions from impacting the side sectionsof the intermediate silicon-containing layer. The side sections of theupper silicon-containing layer also block implanted ions from impactingthe outer edges of the bottom section of the intermediatesilicon-containing layer that underlie the side sections of the upperpolysilicon layer. Accordingly, only a central portion of the bottomsection of the intermediate silicon-containing layer is implanted withions.

[0118] Portions of the lower, intermediate, and upper silicon-containinglayers which are formed above the top of the upper insulating layer arethen removed with a height reduction process such as planarization.Alternatively, there could be an over polish to further remove theintermediate layer which might have been impacted by the implant. Anetching process which is selective to implanted silicon-containingmaterial is then conducted to remove relatively unimplanted portions ofthe intermediate polysilicon layer. The central portion of the bottomsection of the intermediate polysilicon layer which was implanted withions is left remaining, while the outer edges of the bottom section andthe sidewalls of the intermediate silicon-containing layer which werenot implanted with ions are etched away. Thus, the entirety of thesidewalls and a portion of the bottom sections of the lower and upperpolysilicon layers are exposed, increasing the surface area of thestorage node. A shaped structure is formed thereby with a large surfacearea that makes the shaped structure highly suitable for use as astorage node of a stacked capacitor. In completing a stacked capacitor,a thin dielectric layer is formed over the storage node, and a cellplate is formed over the thin dielectric layer.

[0119] The storage node is formed in a streamlined and efficient manner,with only a single etching process that is conducted with a simple wetetch. The storage node has a large surface area, yet occupies a minimumof space on the semiconductor substrate.

[0120] A fourteenth method of the present invention uses the etchingprocess which is selective to implanted silicon-containing material ofthe first method, and forms a stacked capacitor storage node with afree-standing wall having a thickness determined by the selection of aset of implantation parameters of an ion implantation operation. Thestacked capacitor storage node is also formed with a roughened surfacefor greater surface area. The fourteenth method initially involvesproviding a semiconductor substrate and a charge conducting region towhich the stacked capacitor storage node will be connected. In oneembodiment, the semiconductor substrate comprises a silicon substrate ofa semiconductor wafer and the charge conducting region comprises anactive region located on the semiconductor substrate. It is preferredthat a pair of gate regions be formed on the silicon substrate, one ateither side of the active region. A layer of insulating material is thenformed over the gate regions and the active region with a depthcorresponding to a height to which the storage node is desired to extendabove the gate regions.

[0121] Once formed, the insulating layer is thereafter planarized and anopening is formed in the insulating layer extending down to the chargeconducting region. The opening preferably is self-aligned to the pair ofgate regions in the manner of the thirteenth method.

[0122] A polysilicon layer is subsequently formed in the opening. Thepolysilicon layer is preferably a blanket layer and is deposited with athickness that only partially fills the opening. The thickness of thepolysilicon layer is selected in accordance with a desired thickness ofthe stacked capacitor storage node sidewalls to be formed and with anetching process which is selective to implanted silicon-containingmaterial.

[0123] An ion implantation process is then conducted in the mannerdescribed in the discussion of the first method. The ions are implantedinto an outer portion of the polysilicon layer and are not implantedinto an inner portion thereof. In order to do so, the ions arepreferably implanted at an angle other than orthogonal to the plane ofthe semiconductor wafer. The ions are also implanted with animplantation energy selected in conjunction with the angle ofimplantation to implant the polysilicon layer to a desired depth. Thedesired depth corresponds to a thickness of a resulting free-standingwall of a stacked capacitor storage node that is to be formed from thepolysilicon layer. The ion implantation can be conducted in stages withthe ion implantation parameters varied between the stages to tailor theshape of the implanted portion as was discussed for the first method.

[0124] The remainder of the opening is thereafter filled withphotoresist or other suitable material in preparation for conducting aheight reduction process. The photoresist or other suitable materialprotects the polysilicon in the opening from being contaminated by theheight reduction process. The height reduction process is then conductedto remove portions of the polysilicon layer that extend above the top ofthe insulating layer. The height reduction process is preferably aplanarization process and more preferably is a CMP process.

[0125] The surface area of the stacked capacitor storage node isincreased by roughening the polysilicon layer at this stage or at alater stage in the fourteenth method. To do so, a layer of hemisphericalor cylindrical grain polysilicon is preferably deposited with a chemicalvapor deposition (CVD) process on the polysilicon layer in the opening.

[0126] In a further procedure, the etching process which is selective toimplanted silicon-containing material is conducted and removes theunimplanted inner portion of the polysilicon layer. The implanted outerportion of the polysilicon layer remains in place and forms afree-standing wall around the opening without physically contacting theopening except at the bottom of the opening, where it may contact thegate regions and is in electrical communication with the underlyingcharge conducting region. Preferably, the opening is circular, andconsequently, the free-standing wall is annular.

[0127] If the interior of the free-standing wall was not roughened at aprior stage of the fourteenth method, it can be roughened at this point.As both an inner face and an outer face of the polysilicon layer are nowexposed, hemispherical or cylindrical grain polysilicon is formed onboth the inner face and on the outer face of the free-standing wall.Roughening the free-standing wall surface at the prior stage results inonly the inner face being roughened. Accordingly, roughening at thislater stage is preferred over roughening in the prior stage.

[0128] Once the stacked capacitor storage node is formed, conventionalprocess flow is followed to complete a stacked capacitor. Briefly,completion of a stacked capacitor involves forming a dielectric layerover the storage node, and forming a layer of polysilicon or othercharge conducting material over the dielectric layer.

[0129] The fourteenth method is advantageous in that the stackedcapacitor formed thereby has a large surface area, yet consumes minimalspace on the silicon substrate of the semiconductor wafer. The method issimple and can be conducted so as to provide for high throughput and lowcost of the integrated circuit fabrication process.

[0130] A fifteenth method of the present invention uses the etchingprocess which is selective to implanted silicon-containing material ofthe first method along with multiple ion implantations of differingranges of depth or otherwise in different patterns to form shapedpolysilicon structures. The manner of formation of severalrepresentative shaped structures formed by variations of the basicembodiment of the fifteenth method are discussed herein.

[0131] The basic embodiment of the fifteenth method initially involvesproviding a volume of silicon-containing material. In the embodimentsdiscussed herein, the volume of silicon-containing material comprises apolysilicon layer. Once the polysilicon layer is provided, a firstselected region of the polysilicon layer is implanted with ions to afirst depth range. A second selected region of the polysilicon layer isthen also implanted with ions to a second depth range. The second depthrange is preferably implanted with a lower implantation energy range andextends less deeply into the polysilicon layer than the first depthrange. After ion implantation, the polysilicon layer is etched with anetching process which is selective to implanted silicon-containingmaterial to remove the unimplanted polysilicon. The etching process isconducted substantially as described above for the first method.

[0132] The first and second selected regions are left remaining and forma shaped structure. Other selected regions which are implanted with ionsto a different depth range or which are patterned with a differentprofile can be added to the first and second regions to form shapedstructures of varying conformations.

[0133] In one embodiment, a free-standing bridge is formed by implantingregions of the polysilicon layer to form two uprights and an interveningcross-bar extending therebetween. The free-standing bridge can be formedwith multiple cross-bars of different heights. The multiple cross-barfree-standing bridge is suitable for use as a severable fuse and can beemployed in forming a programmable read only memory device (PROM).

[0134] By forming a single upright and a cross-bar integrally attachedto the upright, a lever is formed that is suitable for use in formingmicromachines. Overlapping cross-bars which do not electrically contacteach other can also be formed.

[0135] In a further embodiment, a polysilicon block with an integrallyformed tunnel extending entirely through the bottom thereof is formed.The polysilicon block is shaped and formed with a dry etching process,and the tunnel is formed by implanting portions of the polysilicon blockthat are to remain and then selectively etching away the relativelyunimplanted portions.

[0136] In a further embodiment, a tunnel is formed extending from thesurface of the polysilicon layer down below the surface of thepolysilicon layer. A portion of the polysilicon layer situated aroundthe tunnel is oxidized, and a metal is deposited into the tunnel toresult in a conducting interconnect line routed beneath the surface of anow oxidized polysilicon layer.

[0137] The fifteenth method provides the capability of forming a widevariety of conducting shaped structures in an efficient manner, therebyallowing for greater functionality of the resulting integrated circuit.The shaped structures of the fifteenth method are formed with a minimalnumber of material deposition, masking, and etching operations. Theshaped structures are thus formed efficiently, consuming a minimum ofintegrated circuit manufacturing process time.

[0138] A sixteenth method of the present invention uses the etchingprocess which is selective to implanted silicon-containing material ofthe first method to form a bottle shaped trench in a semiconductorsubstrate. The bottle shaped trench is useful for forming a trenchcapacitor and for forming a trench isolation region.

[0139] The sixteenth method initially involves forming a substantiallyanisotropic trench in a volume of silicon-containing material on asemiconductor substrate. In one embodiment to be described, the volumeof silicon-containing material is a silicon substrate and thesemiconductor substrate is a semiconductor wafer. Thus, in thisembodiment, a silicon substrate is provided and a masking substrate isformed over the silicon substrate. In one embodiment, the maskingsubstrate is a photoresist mask and is self-aligned to gate regionsformed on either side of the trench. Ions are then implanted into thetrench. The ions are preferably implanted at an angle of implantationother than orthogonal to the surface of the silicon substrate. The angleof implantation is selected such that the ions are primarily directedtoward the bottom portion of the trench rather than toward the top ofthe trench. Consequently, the bottom of the trench is implanted to agreater extent than the top of the trench.

[0140] An etching process which is selective to silicon-containingmaterial that is not implanted with ions of the selected type is thenconducted substantially in the manner described above for the secondmethod. Material from the implanted portions of the trench is therebyremoved, expanding the bottom of the trench more than the top of thetrench and giving the trench its bottle shape. The bottle-shaped trenchcan be used for various applications, including the formation of atrench capacitor and a trench isolation region.

[0141] When forming a trench capacitor, a storage node is deposited inthe trench, followed by a dielectric layer and an upper capacitor plateto complete the trench capacitor. When forming a trench isolationregion, the bottle-shaped trench is filled with insulating material. Theinsulating material can be formed by first growing a layer of siliconoxide on the trench sidewalls and then depositing an insulating materialinto the remainder of the trench.

[0142] The trench capacitor is thus formed with greater surface areathan if a conventionally shaped trench were formed. The greater surfacearea is achieved without occupying additional surface area of thesilicon substrate. It is also achieved with a simple and efficientprocess. The trench isolation region likewise is formed with a largevolume, and consequently provides great isolation capability, withoutconsuming a large amount of silicon substrate surface area. The largevolume provides a high resistance to cross-talk current leakage withoutsacrificing semiconductor device density and miniaturization.

[0143] A seventeenth method of the present invention uses the etchingprocess which is selective to implanted silicon-containing material ofthe first method. The seventeenth method forms a region ofsilicon-containing material on each of one or more exposed horizontalsurfaces of a semiconductor substrate, while not forming a region ofsilicon-containing material on any exposed vertical surfaces.

[0144] The seventeenth method initially involves providing asemiconductor substrate on which is located a protruding structurehaving an exposed horizontal surface and an exposed vertical surface.The protruding structure can be, for instance, a gate region on asilicon substrate of a semiconductor wafer.

[0145] A layer of silicon-containing material is formed over the exposedhorizontal surface and over the exposed vertical surface. The layer ofsilicon-containing material is, in one embodiment which is to bediscussed, a polysilicon layer. The polysilicon layer is preferablyintrinsic polysilicon.

[0146] Ions are, in a subsequent procedure, implanted into the portionof the polysilicon layer that is situated on the exposed horizontalsurface. The ions are of a type selected in accordance with an etchingprocess which is selective to implanted polysilicon as described for thefirst embodiment. The ions are preferably implanted with an angle ofimplantation that is orthogonal to the exposed horizontal surface.

[0147] The implantation of ions at an orthogonal angle causes portionsof the polysilicon layer situated on the exposed horizontal surface tobe implanted with ions and does not substantially implant ions into aportion of the polysilicon layer situated over the exposed verticalsurface.

[0148] In a subsequent procedure, the etching process is conducted whichis selective to implanted silicon-containing material which is describedabove in the discussion of the first method. Thus, the portion of thepolysilicon layer that was situated over the exposed vertical surfaceand was thus not implanted with ions is etched away. The portion of thepolysilicon layer that is located over the exposed horizontal surfaceand was thus implanted with ions is left remaining.

[0149] Several applications of the seventeenth method are provided. Inone application, the vertically protruding feature is a gate region of aMOS transistor, and a polysilicon region is formed on the horizontalsurfaces of the gate region for use as an implant mask for a haloimplant to provide punch-through protection.

[0150] In a further application, polysilicon regions are formed onhorizontal surfaces for use as interconnect lines. When forminginterconnect lines, protruding features of the interconnect lines can beformed from insulating material. Consequently, polysilicon regionsformed at the sides and top of the protruding features, which are not inelectrical communication therewith, can be used to form separateinterconnect lines. Such a protruding feature could also be an existinginterconnect line, or a gate region, and could have thereon aninsulating layer for electrically isolating the protruding feature fromthe region of polysilicon located on top of the protruding feature.Thus, the region of polysilicon situated on the protruding feature andthe protruding feature can each form separate interconnect lines.

[0151] When forming interconnect lines or other such conducting shapedstructures, the polysilicon region, once formed on a horizontal surface,can be converted to a refractory metal silicide to increase theconductivity thereof. In so doing, a layer of refractory metal such astitanium is deposited over the region of polysilicon, typically as ablanket layer. Thereafter, a heating treatment is conducted to react theexposed region of polysilicon with the refractory metal. The portions ofthe unreacted refractory metal can then be removed with a suitableetching process which etches the refractory metal selective to asilicide of the refractory metal. Refractory metal silicide is left overthe exposed horizontal surface in the location where the region ofpolysilicon was located.

[0152] The interconnect lines and halo mask implant are each formed in asimple and efficient manner that is compatible with current processflows. The interconnect lines can be formed close together with highdensity, and the halo implant mask can be formed accurately and withappropriately sized openings which are useful in forming highlyminiaturized transistors.

[0153] An eighteenth method of the present invention uses the etchingprocess which is selective to implanted silicon-containing material ofthe first method. The eighteenth method forms a narrow interconnect linethat is integrally connected to a region of greater width forelectrically connecting the interconnect line to a larger structure. Thenarrow interconnect line can be formed with a sub-photolithographyresolution width.

[0154] The eighteenth method initially involves providing a layer ofsilicon-containing material, which by way of example in the embodimentto be discussed is a polysilicon layer on a semiconductor substrate. Thepolysilicon layer is preferably formed from intrinsic polysilicon. Oncethe polysilicon layer is deposited, a masking substrate is applied andis patterned with an opening through which a selected region of thepolysilicon layer will be implanted with ions. The selected region isused for connecting the interconnect line, once formed, with a structureof greater width than the interconnect line.

[0155] After the masking substrate is applied, a first ion implantationprocess is conducted in which the selected region is implanted with ionsof a selected type chosen in accordance with an etching process which isselective to implanted silicon-containing material, as was discussedabove for the first embodiment. The masking substrate is then removedand a second masking substrate is applied over the polysilicon layer andis patterned to have a selected surface shape, the outer periphery ofwhich coincides with the desired location of the interconnect line. Adry etching process or equivalent material removal process is thenconducted to reduce the polysilicon layer to a block of polysiliconhaving anisotropically etched sidewalls and a perimeter of the selectedsurface shape. The selected region is preferably located proximal to theperimeter of the block of polysilicon.

[0156] While the second masking substrate is in place, ions areimplanted with a second ion implantation process into one or morelaterally extending surfaces of the block of polysilicon. The ions areof a type that is selected in accordance with an etching process whichis selective to implanted silicon-containing material as discussed forthe first embodiment. The ions of the second ion implantation operationcan be of the same type as the ions of the first ion implantationprocess, or can be of a different type. The ions of the secondimplantation process are implanted with an angle and energy selected toimplant ions into laterally extending surfaces of the block ofpolysilicon to a selected depth. The selected depth corresponds to thethickness of the completed interconnect line. The angle of implantationis conducted essentially in the manner discussed above for the first andsixth methods.

[0157] After ion implantation is conducted, the etching process which isselective to implanted silicon-containing material is conductedsubstantially as described above in the discussion of the first method.The result is that unimplanted polysilicon of the block of polysiliconis etched away and implanted polysilicon is left remaining. Theimplanted regions of the one or more sidewalls thus remains, as does theselected region. The selected region of the polysilicon layer forms acontact pad and is integrally connected with the interconnect line. Ofcourse, more than one contact pad can be formed on the interconnectline, and more than one interconnect line can be formed.

[0158] The entire perimeter of the block of polysilicon can be implantedso as to divide the block of polysilicon into two or more separateinterconnect lines that are separated by breaks formed in theinterconnect lines. In one embodiment, the breaks are formed usingsacrificial spacer blocks close to the outer perimeter of the block ofpolysilicon. The sacrificial spacer blocks are formed prior to thesecond ion implantation operation, preferably during the patterning andformation of the block of polysilicon. The sacrificial spacer blocksabsorb the implanted ions and block the implanted ions from implanting asegment of the sidewall of the block of polysilicon. Consequently, anopening is formed at the location of the segment that was not implanted,causing therein a break in the resulting interconnect line.Alternatively, the opening could be formed with a separate masking andetching procedure that is conducted after the interconnect line has beenformed.

[0159] The interconnect line formed by the eighteenth method has a shapedetermined by the angle of implantation and the implantation energy,rather than by photolithography, and consequently can have a width thatis smaller than that which can be provided by conventionalphotolithography processes. The interconnect line of the eighteenthmethod is also formed with an integral structure of greater width thanthe interconnect line for connecting the interconnect line to a largerstructure. Consequently, the interconnect line can be highlyminiaturized, while maintaining the flexibility of being able to connecteasily to other semiconductor devices or features of semiconductordevices thereof. Additionally, the narrower interconnect line can beused as a gate region and when so used will have a short channel length.The short channel length allows for a lower threshold voltage of the MOStransistor and consequently a higher speed.

[0160] These and other features of the present invention will becomemore fully apparent from the following description and appended claims,or may be learned by the practice of the invention as set forthhereinafter.

BRIEF DESCRIPTION OF THE DRAWINGS

[0161] In order that the manner in which the above-recited and otheradvantages and features of the invention are obtained, a more particulardescription of the invention briefly described above will be rendered byreference to specific embodiments thereof which are illustrated in theappended drawings. Understanding that these drawings depict only typicalembodiments of the invention and are not therefore to be consideredlimiting of its scope, the invention will be described and explainedwith additional specificity and detail through the use of theaccompanying drawings in which:

[0162]FIG. 1 is a cross-sectional view of a semiconductor wafer having apolysilicon layer provided thereon that is patterned with a maskingsubstrate in an initial procedure of a first method of the presentinvention.

[0163]FIG. 2 is a cross-sectional view of the semiconductor wafer ofFIG. 1 showing a further procedure of the first method of the presentinvention in which ions are implanted into unmasked portions of thepolysilicon layer of FIG. 1.

[0164]FIG. 3 is a graph depicting the depth of penetration pattern ofions implanted in multiple implantation stages at varying concentrationsunder the edges of a masked portion of the polysilicon layer of FIG. 2.

[0165]FIG. 4 is a cross-sectional view of the semiconductor wafer ofFIG. 3, showing a procedure of the first method of the present inventionin which a masking substrate is removed from the polysilicon layer ofFIG. 3.

[0166]FIG. 5 is a graph illustrating the relationship of an etch rate ofthe etching process which is selective to implanted silicon-containingmaterial of the present invention as a function of implanted ionconcentration, in arbitrary units.

[0167]FIG. 6 is a cross-sectional view of the semiconductor wafer ofFIG. 4, showing a further procedure of the first method of the presentinvention in which relatively unimplanted portions of the polysiliconlayer are etched away to form a shaped opening therein.

[0168]FIG. 7 is a cross-sectional view of the semiconductor wafer ofFIGS. 1 through 5, showing a procedure used in an alternative embodimentof the method of FIGS. 1 through 6 in which the polysilicon layer withthe shaped opening of FIG. 6 is used to form a shaped opening of similardimensions in an underlying layer.

[0169]FIG. 8 is a cross-sectional view of the semiconductor wafer ofFIG. 7, showing a further procedure of the embodiment of FIG. 7 in whichthe underlying layer of FIG. 7 is etched using the shaped opening ofFIG. 7 as a hard mask.

[0170]FIG. 9 is a cross-sectional view of the semiconductor wafer ofFIG. 8, showing chalcogenide material of a programmable resistor formedin the shaped opening of FIG. 8.

[0171]FIG. 10 is a cross-sectional view of a semiconductor wafer showinga procedure in a second method of the present invention in which apolysilicon layer is formed over a semiconductor substrate.

[0172]FIG. 11 is a cross-sectional view of the semiconductor wafer ofFIG. 10, showing a further procedure in the second method of the presentinvention in which a masking substrate is formed over the polysiliconlayer of FIG. 10.

[0173]FIG. 12 is a cross-sectional view of the semiconductor wafer ofFIG. 11, showing a further procedure in the second method of the presentinvention in which ions are implanted into the polysilicon layer of FIG.11.

[0174]FIG. 13 is a cross-sectional view of the semiconductor wafer ofFIG. 12, showing a further procedure in the second method of the presentinvention in which a first etching process is conducted that etches thepolysilicon layer of FIG. 12 anisotropically.

[0175]FIG. 14 is a cross-sectional view of the semiconductor wafer ofFIG. 13, showing a further procedure in the second method of the presentinvention in which a second etching process is conducted that etches thepolysilicon layer anisotropically and selectively to unimplantedsilicon-containing material to result in a shaped structure.

[0176]FIG. 15 is a cross-sectional view of the semiconductor wafer ofFIG. 14, showing a procedure in an embodiment of the second method ofthe present invention in which an underlying layer is provided and theshaped structure of FIG. 14 is formed thereon.

[0177]FIG. 16 is a cross-sectional view of the semiconductor wafer ofFIG. 15, showing a further procedure in the second method in which theshaped structure of FIG. 15 is used as a hard mask for etching theunderlying layer of FIG. 15.

[0178]FIG. 17 is a cross-sectional view of the semiconductor wafer ofFIG. 14, showing a procedure in a further embodiment of the secondmethod in which an oxide layer is provided over the shaped structure ofFIG. 14.

[0179]FIG. 18 is a cross-sectional view of the semiconductor wafer ofFIG. 17, showing a further procedure in the second method in which theoxide layer of FIG. 17 is planarized, leaving the shaped feature encasedwithin the oxide layer.

[0180]FIG. 19 is a cross-sectional view of the semiconductor wafer ofFIG. 18, showing a further procedure in the embodiment of FIG. 18 inwhich the shaped feature of FIG. 18 is etched away, leaving a patternedopening in the oxide layer.

[0181]FIG. 20 is a cross-sectional view of a semiconductor wafer showinga procedure in a third method of the present invention in which aplurality of active regions are provided between a plurality of gateregions.

[0182]FIG. 21 is a cross-sectional view of the semiconductor wafer ofFIG. 20, showing a further procedure in the third method of the presentinvention in which a polysilicon layer is formed over the active regionsof FIG. 20.

[0183]FIG. 22 is a cross-sectional view of the semiconductor wafer ofFIG. 21, showing a further procedure in the third method in which a hardmask is formed over the polysilicon layer of FIG. 21, and in which ionsare implanted into the exposed portions of the polysilicon layer of FIG.21.

[0184]FIG. 23 is a cross-sectional view of the semiconductor wafer ofFIG. 22, showing a further procedure in the third method in which anetching process is conducted which is selective to implantedsilicon-containing material and which results in the formation of aplurality of polysilicon plugs above the active regions of FIG. 22.

[0185]FIG. 24 is a cross-sectional view of a semiconductor wafer showingan initial procedure in a fourth method of the present invention, inwhich spacers are formed on the interior edges of openings in the hardmask of FIG. 22 above the active regions of FIG. 22, and wherein ionsare implanted into the polysilicon layer of FIG. 22.

[0186]FIG. 25 is a cross-sectional view of a semiconductor wafer showinga further procedure in the fourth method in which an etching processwhich is selective to implanted silicon-containing material isconducted, and in which the formation of a capacitor storage node and apolysilicon plug results.

[0187]FIG. 26 is a cross-sectional view of a semiconductor wafer showingan initial procedure in a fifth method of the present invention in whicha CMOS process flow is conducted to form a plurality of gate regions,and in which an insulating layer is formed over the plurality of gateregions.

[0188]FIG. 27 is a cross-sectional view of the semiconductor wafer ofFIG. 26, showing a further procedure in the fifth method of the presentinvention in which a PMOS portion of the semiconductor wafer is maskedand in which ions are implanted into an NMOS portion of thesemiconductor wafer.

[0189]FIG. 28 is a cross-sectional view of the semiconductor wafer ofFIG. 27, showing a further procedure in the fifth method of the presentinvention in which a polysilicon layer is formed over the structure ofFIG. 27, a hard mask layer is formed and patterned thereon, and ions areimplanted into exposed portions of the polysilicon layer.

[0190]FIG. 29 is a cross-sectional view of the semiconductor wafer ofFIG. 28, showing a further procedure in the fifth method of the presentinvention in which the hard mask layer of FIG. 28 is removed and thepolysilicon layer of FIG. 28 is etched with an etching process which isselective to implanted silicon-containing material to form a polysiliconplug.

[0191]FIG. 30 is a cross-sectional view of the semiconductor wafer ofFIG. 29, showing a further procedure in the fifth method of the presentinvention in which the NMOS portion of the semiconductor wafer is maskedand ions are implanted into the PMOS portion of the semiconductor wafer.

[0192]FIG. 31 is a cross-sectional view of a semiconductor wafer showingan initial procedure in a sixth method of the present invention in whicha polysilicon layer is patterned with masking substrate islands.

[0193]FIG. 32 is a cross-sectional view of the semiconductor wafer ofFIG. 31, showing a further procedure in the sixth method in which thepolysilicon layer is anisotropically etched to form polysilicon blocksand in which ions are directionally implanted into sidewalls of thepolysilicon blocks.

[0194]FIG. 33 is a cross-sectional closeup view of a sidewall of apolysilicon block of FIG. 32, showing an ion concentration profilecreated by the ion implantation operation of FIG. 32.

[0195]FIG. 34 is a cross-sectional view of the semiconductor wafer ofFIG. 31, showing the results of a further procedure in the sixth methodin which an etching process is conducted which is selective to implantedsilicon-containing material to form a plurality of free-standing walls.

[0196]FIG. 35 is a perspective view of a semiconductor wafer showinginitial procedure in a seventh method of the present invention in whicha masking substrate is formed over a polysilicon layer and is patternedwith circular openings shown in phantom.

[0197]FIG. 36 is a perspective view of the semiconductor wafer of FIG.35, showing a further procedure in the seventh method in which thepolysilicon layer of FIG. 35 is anisotropically etched to form a pair ofcircular openings in the polysilicon layer, and in which ions areimplanted into sidewalls of the circular openings depicted in phantom.

[0198]FIG. 37 is a cross-sectional closeup view of a sidewall of apolysilicon block of

[0199]FIG. 36, showing an ion concentration profile created by the ionimplantation operation of FIG. 35.

[0200]FIG. 38 is a perspective view of the semiconductor wafer of FIG.36, showing the results of a further procedure in the seventh method inwhich an etching process which is selective to implantedsilicon-containing material is conducted to produce a pair of annularfree-standing walls.

[0201]FIG. 39 is a cross-sectional view of a semiconductor wafer showinginitial procedure in an eighth method of the present invention in whicha MOS surround-gate transistor is formed with a conical sidewall and inwhich ions are implanted to form doped source/drain regions of the MOSsurround-gate transistor.

[0202]FIG. 40 is a top-down view of the semiconductor wafer of FIG. 39,showing the completed MOS surround-gate transistor thereon.

[0203]FIG. 41 is a cross-sectional view of the semiconductor wafer ofFIG. 40, showing a procedure used in forming a memory cell incorporatingthe MOS surround-gate transistor of FIG. 40.

[0204]FIG. 42 is a cross-sectional view of a semiconductor wafer showingan initial procedure in a ninth method of the present invention in whicha series of gate structures are provided on a semiconductor wafer andare covered by a polysilicon layer and a silicon nitride layer.

[0205]FIG. 43 is a cross-sectional view of the semiconductor wafer ofFIG. 42, showing a further procedure in the ninth method of the presentinvention in which a conical opening is etched through the siliconnitride layer and the polysilicon layer of FIG. 42.

[0206]FIG. 44 is a cross-sectional view of the semiconductor wafer ofFIG. 43, showing a further procedure in the ninth method of the presentinvention in which a second polysilicon layer is deposited and intowhich ions are implanted.

[0207]FIG. 45 is a cross-sectional view of the semiconductor wafer ofFIG. 44, showing a further procedure in the ninth method of the presentinvention in which an etching process which is selective to implantedsilicon-containing material is conducted to obtain a pair of smallsurface area polysilicon capacitor storage nodes.

[0208]FIG. 46 is a cross-sectional view of a semiconductor waferdepicting an initial procedure of a tenth method of the presentinvention in which a pair of gate regions and an intervening activeregion are formed on a semiconductor wafer and wherein a polysiliconlayer is formed thereover.

[0209]FIG. 47 is a cross-sectional view of the semiconductor wafer ofFIG. 46, depicting a further procedure of the tenth method of thepresent invention in which a masking substrate is formed and patternedover the active region of FIG. 46.

[0210]FIG. 48 is a cross-sectional view of the semiconductor wafer ofFIG. 47, depicting a further procedure of the tenth method of thepresent invention in which exposed regions of the polysilicon layer arepartially etched and wherein ions are implanted into the partiallyetched exposed regions of the polysilicon layer.

[0211]FIG. 49 is a cross-sectional view of the semiconductor wafer ofFIG. 48, showing a further procedure in the tenth method of the presentinvention in which an etching process which is selective to unimplantedpolysilicon is conducted to obtain a polysilicon plug.

[0212]FIG. 50 is a cross-sectional view of a semiconductor wafer showingan initial procedure in an eleventh method of the present invention inwhich a plurality of gate regions and intervening active regions areformed on a semiconductor wafer and in which a polysilicon layer isformed thereover.

[0213]FIG. 51 is a cross-sectional view of the semiconductor wafer ofFIG. 50, showing a further procedure of the eleventh method of thepresent invention in which the polysilicon layer of FIG. 50 isplanarized down to the level of the gate regions of FIG. 50.

[0214]FIG. 52 is a cross-sectional view of the semiconductor wafer ofFIG. 51, showing a further procedure of the eleventh method in which aninsulating layer is formed over the polysilicon layer of FIG. 51, anopening is formed in the insulating layer, and ions are implanted intopolysilicon regions between the gate regions of FIG. 51 under theopening in the insulating layer.

[0215]FIG. 53 is a cross-sectional view of the semiconductor wafer ofFIG. 52, showing a further procedure of the eleventh method of thepresent invention in which the insulating layer is removed and thepolysilicon layer is etched with an etching process which is selectiveto implanted silicon-containing material to obtain a pair of polysiliconplugs.

[0216]FIG. 54 is a cross-sectional view of a semiconductor wafer showingan initial procedure of a twelfth method of the present invention inwhich a set of gate regions and intervening active regions are formed ona semiconductor wafer and a polysilicon layer is formed thereon.

[0217]FIG. 55 is a cross-sectional view of the semiconductor wafer ofFIG. 54, showing a further procedure of the twelfth method of thepresent invention in which the polysilicon layer of FIG. 54 isplanarized down to the level of the tops of the gate regions of FIG. 54.

[0218]FIG. 56 is a cross-sectional view of the semiconductor wafer ofFIG. 55, showing a further procedure of the twelfth method of thepresent invention in which an insulating layer is formed over thepolysilicon layer of FIG. 55, an opening is formed in the insulatinglayer, and ions are implanted into polysilicon regions between the gateregions under the opening in the insulating layer.

[0219]FIG. 57 is a cross-sectional view of the semiconductor wafer ofFIG. 56, showing a further procedure of the twelfth method of thepresent invention in which the insulating layer of FIG. 56 is removedand the polysilicon layer of FIG. 56 is etched with an etching processwhich is selective to implanted silicon-containing material to obtain apair of polysilicon plugs.

[0220]FIG. 58 is a cross-sectional view of the semiconductor wafer ofFIG. 57, showing a further procedure of the twelfth method of thepresent invention in which an insulating layer is formed over the gateregions of FIG. 57 and an opening is etched down to one of thepolysilicon plugs of FIG. 58.

[0221]FIG. 59 is a cross-sectional view of the semiconductor wafer ofFIG. 58, showing a further procedure of the twelfth method of thepresent invention in which the polysilicon plug of FIG. 58 is removed toform an extended depth interconnect structure opening.

[0222]FIG. 60 is a cross-sectional view of a semiconductor wafer showingan initial procedure of a thirteenth method of the present invention inwhich an opening is formed in an oxide layer located over a polysiliconplug that is situated between two gate regions.

[0223]FIG. 61 is a cross-sectional view of the semiconductor wafer ofFIG. 60, showing a further procedure of the thirteenth method of thepresent invention in which three adjacent polysilicon layers are formedin the opening of FIG. 60.

[0224]FIG. 62 is a cross-sectional view of the semiconductor wafer ofFIG. 61, showing a further procedure of the thirteenth method in whichions are implanted into a central portion of a bottom section of amiddle polysilicon layer of the three adjacent polysilicon layers ofFIG. 61.

[0225]FIG. 63 is a cross-sectional view of the semiconductor wafer ofFIG. 61, showing a further procedure of the thirteenth method in whichan etching process which is selective to implanted silicon-containingmaterial is conducted to remove relatively unimplanted portions of themiddle polysilicon layer of FIG. 62.

[0226]FIG. 64 is a cross-sectional view of the semiconductor wafer ofFIG. 63, showing a further procedure of the thirteenth method of thepresent invention in which a dielectric layer is formed over thefinished storage node of FIG. 63 and a top capacitor plate is depositedover the dielectric layer.

[0227]FIG. 65 is a cross-sectional view of a semiconductor wafer showingan initial procedure of a fourteenth method of the present invention inwhich an opening is formed through an insulating layer down to ajunction situated between two gate regions, and in which a polysiliconlayer is formed in the opening.

[0228]FIG. 66 is a cross-sectional view of the semiconductor wafer ofFIG. 65, showing a further procedure of the fourteenth method of thepresent invention in which ions of a selected type are implanted intothe polysilicon layer of FIG. 65 to form an implanted region thereat andleaving an unimplanted region under the implanted region.

[0229]FIG. 67 is a cross-sectional view of the semiconductor wafer ofFIG. 66, showing a further procedure of the fourteenth method of thepresent invention in which the opening of FIG. 66 is filled withphotoresist material and in which portions of the polysilicon layerlocated over the opening are planarized.

[0230]FIG. 68 is a cross-sectional view of the semiconductor wafer ofFIG. 66, showing a further procedure of the fourteenth method of thepresent invention in which an etching process is conducted which isselective to implanted silicon-containing material to remove theunimplanted inner portion of the polysilicon layer and in which HSGpolysilicon is deposited on the inner and outer faces of a free-standingwall formed thereby.

[0231]FIG. 69 is a cross-sectional view of a semiconductor wafer showingan initial procedure of one embodiment of a fifteenth method of thepresent invention in which a photoresist mask is formed over apolysilicon layer and ions are implanted through a first set of openingsin the photoresist mask and into the polysilicon layer.

[0232]FIG. 70 is a cross-sectional view of the semiconductor wafer ofFIG. 69, showing a further procedure of one embodiment of the fifteenthmethod of the present invention in which a second photoresist mask isformed over the polysilicon layer of FIG. 69 and ions are implantedthrough a second opening in the photoresist mask and into thepolysilicon layer of FIG. 69.

[0233]FIG. 71 is a cross-sectional view of the semiconductor wafer ofFIG. 70, showing a further procedure of the fifteenth method of thepresent invention in which an etching process is conducted which isselective to implanted silicon-containing material, and in whichrelatively unimplanted portions of the polysilicon layer are removed toform a freestanding bridge.

[0234]FIG. 72 is a cross-sectional view of a semiconductor wafer showinga lever formed by an alternate embodiment of the fifteenth method of thepresent invention.

[0235]FIG. 73 is a cross-sectional view of a semiconductor wafer showinga multiple cross-bar free-standing bridge formed by another alternateembodiment of the fifteenth method of the present invention.

[0236]FIG. 74a is a cross-sectional view of a semiconductor wafershowing overlapping bridges formed by yet another alternate embodimentof the fifteenth method of the present invention, and FIG. 74b is sideview of FIG. 74a.

[0237]FIG. 75 is a cross-sectional view of a semiconductor wafer showingan initial procedure in a further alternate embodiment of the fifteenthmethod of the present invention in which a photoresist mask is formedover a polysilicon layer that has been implanted with ions of a selectedtype in all but a selected region.

[0238]FIG. 76 is a cross-sectional view of the semiconductor wafer ofFIG. 70, showing a further procedure of an alternate embodiment of thefifteenth method of the present invention in which a dry etching processis conducted with the use of the photoresist mask to form a block ofpolysilicon that has an opening extending through the center thereof.

[0239]FIG. 77 is a cross-sectional view of a semiconductor wafer showinga tunnel formed by a further alternate embodiment of the fifteenthmethod of the present invention.

[0240]FIG. 78 is a cross-sectional view of a semiconductor wafer showingan initial procedure of a first embodiment of a sixteenth method of thepresent invention in which ions are implanted through a photoresist maskinto sidewalls of a trench disposed between two gate regions.

[0241]FIG. 79 is a cross-sectional view of the semiconductor wafer ofFIG. 78, showing a further procedure of the first embodiment of thesixteenth method of the present invention in which an etching processwhich is selective to unimplanted silicon-containing material isconducted to remove relatively unimplanted portions of the sidewalls inthe trench of FIG. 78.

[0242]FIG. 80 is a cross-sectional view of the semiconductor wafer ofFIG. 79, showing a further procedure of the first embodiment of thesixteenth method of the present invention in which a capacitor storagenode, dielectric layer, and upper plate are deposited in the trench ofFIG. 79 to form a trench capacitor.

[0243]FIG. 81 is a cross-sectional view of the semiconductor wafer ofFIG. 79, showing a procedure of a second embodiment of the sixteenthmethod of the present invention in which an insulating layer is grownand in which an oxide filler material is deposited into the trench toform a trench isolation region.

[0244]FIG. 82 is a cross-sectional view of a semiconductor wafer showingan initial procedure in a first embodiment of a seventeenth method ofthe present invention in which a polysilicon layer is formed over a gateregion and in which ions of a selected type are implanted intohorizontal surfaces of the polysilicon layer.

[0245]FIG. 83 is a cross-sectional view of the semiconductor wafer ofFIG. 82, showing a further procedure of the first embodiment of theseventeenth method in which an etching process which is selective toimplanted silicon-containing material is conducted to remove implantedportions of the polysilicon layer and in which the polysilicon layer isused as a mask for a halo implantation operation.

[0246]FIG. 84 is a cross-sectional view of a semiconductor wafer showinga procedure in a second embodiment of the seventeenth method of thepresent invention in which a polysilicon layer is formed over analuminum interconnect line and in which ions of a selected type areimplanted into horizontal surfaces of the polysilicon layer.

[0247]FIG. 85 is a cross-sectional view of the semiconductor wafer ofFIG. 84, showing a further procedure in the second embodiment of theseventeenth method of the present invention in which an etching processwhich is selective to implanted silicon-containing material is conductedto remove relatively unimplanted portions of the polysilicon layer ofFIG. 84 and in which a titanium layer is deposited over the horizontalsurfaces of the polysilicon layer.

[0248]FIG. 86 is a cross-sectional view of the semiconductor wafer ofFIG. 85, showing a further procedure in the second embodiment of theseventeenth method of the present invention in which a heat treatmentoperation is conducted to convert the horizontal surfaces of thepolysilicon layer to titanium silicide and in which the unreactedtitanium is removed.

[0249]FIG. 87 is a cross-sectional view of a semiconductor wafer showingan initial procedure in an eighteenth method of the present invention inwhich selected regions of a polysilicon layer are implanted through aphotoresist mask.

[0250]FIG. 88 is a top-down plan view of the semiconductor wafer of FIG.87, showing a further procedure of the eighteenth method of the presentinvention in which the polysilicon layer of FIG. 87 is reduced to apatterned polysilicon block having a selected surface shape and in whichsacrificial spacer blocks are formed adjacent selected locations of thepatterned polysilicon block.

[0251]FIG. 89 is a cross-sectional view of the semiconductor wafer ofFIG. 88, showing a further procedure of the eighteenth method of thepresent invention in which laterally extending surfaces of the patternedpolysilicon block of FIG. 88 are implanted with ions.

[0252]FIG. 90 is a top-down plan view of the semiconductor wafer of FIG.89, showing a further procedure of the eighteenth method of the presentinvention in which an etching process which is selective to implantedsilicon-containing material is conducted to remove relativelyunimplanted portions of the patterned polysilicon block and thesacrificial spacer blocks, thereby forming a pair of interconnect lineswith integral contact pads.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0253] 1. Formation of Shaped Structures with an Etching Process whichis Selective to Implanted Silicon-containing Material

[0254]FIGS. 1 through 9 of the accompanying drawings illustrate a firstmethod of the present invention. In the first method, a volume of asilicon-containing material on a semiconductor substrate is patternedwith an etching process. The etching process is selective to implantedsilicon-containing material to form a shaped opening in the volume ofsilicon-containing material. The interconnect structure opening cancomprise an interconnect structure opening, a trench, or another suchshaped structure formed by removing a selected portion of the volume ofsilicon-containing material. The shaped opening can be formed withsmaller dimensions than can currently be formed with currentconventional photolithography technology. A shaped opening in a layer ofmaterial other than the silicon-containing material can also be formedby using the shaped opening as a hard mask for etching the layer ofmaterial other than the silicon-containing material.

[0255]FIG. 1 illustrates an initial procedure of the first method. Inthe embodiment depicted in FIG. 1, a shaped opening in the form of ahole is being formed in a volume of silicon-containing material that inthe depicted embodiment comprises a polysilicon layer. A semiconductorsubstrate is shown, and in the depicted embodiment comprises asemiconductor wafer 10. Semiconductor wafer 10 is provided with asilicon substrate 12, atop of which is provided a volume ofsilicon-containing material represented as a polysilicon layer 14. Aswill be apparent from the disclosure herein, polysilicon layer 14 couldbe substituted with a volume of silicon-containing material other thanpolysilicon.

[0256] Polysilicon layer 14 can be deposited in any known and suitablemanner, and is typically deposited with a CVD process from a precursormaterial such as disilane. Polysilicon layer 14 is preferably formedfrom intrinsic polysilicon. Intrinsic polysilicon is defined herein aspolysilicon that is undoped or that is lightly doped. Lightly dopedpolysilicon is defined as polysilicon having less than 1×10¹⁸ dopantatoms per cm³ of polysilicon. Forming polysilicon layer 14 of intrinsicpolysilicon facilitates the use of an etching process which is selectiveto implanted silicon-containing material that will be discussed below ingreater detail.

[0257] Further processing of the first method, also illustrated in FIG.1, involves forming and patterning a masking substrate over polysiliconlayer 14. In the depicted embodiment, the masking substrate comprises aphotoresist mask 16. The masking substrate could alternatively compriseother patternable materials which are impermeable to implanted ions.Suitable alternatives include patterned layers formed from a nitride oroxide of silicon and photosensitive polyimide. Photoresist mask 16 isapplied in such a manner as to cover and mask a selected region ofpolysilicon layer 14 that has the approximate desired horizontaldimensions of the shaped opening to be formed. The region or regions ofpolysilicon layer 14 that are intended to remain are left unmasked.

[0258]FIG. 2 illustrates a further procedure in the first method. Asshown in FIG. 2, once polysilicon layer 14 is covered with photoresistmask 16, ions 20 are implanted into the unmasked regions of polysiliconlayer 14 Ions 20 are, in one embodiment, implanted orthogonally to theplane of semiconductor wafer 10. The orthogonal angle of ionimplantation results in an anisotropic implantation of the portion ofpolysilicon layer 14 located under photoresist mask 16. In the depictedembodiment, however, in order to reduce the dimensions of the resultingshaped opening from the dimensions of photoresist mask 16, ions 20 arebeing implanted at an angle other than orthogonal to the plane ofsemiconductor wafer 10, causing ions 20 to be embedded under the edgesof photoresist mask 16. Ions 20 to be implanted by the ion implantationoperation can be selected in accordance with the etching process whichis selective to implanted silicon-containing material in a manner thatwill be understood from the following discussion.

[0259] The ion implantation operation is conducted with certain ionimplantation parameters, including implantation dose, type of maskingsubstrate, implantation energy, type of ions implanted, and angle ofimplantation. The ion implantation parameters are, for the most part,determined in accordance with conventional ion implantation procedures.Nevertheless, the ion implantation operation is also used to tailor theprofile of the shaped opening being formed. Consequently, the ionimplantation parameters are selected in an appropriate manner so as tonot only implant ions into the unmasked portion of polysilicon layer 14,but also to tailor the shape of a relatively unimplanted region 30formed in locations where ions are not implanted. The resulting shapedopening will be formed in the location of unimplanted region 30, andwill be of substantially the same profile as unimplanted region 30.

[0260] Appropriate selection of the ion implantation parameters totailor the shape of relatively unimplanted region 30 can involve varyingthe ion implantation parameters from conventional parameters, or varyingthe implantation parameters from those used in a prior plantationoperation. In the depicted embodiment, the shape of the implanted region30 is tailored by implanting the ions at an angle that embeds the ionsunder the edges of photoresist mask 16 and thereby leaves a relativelyunimplanted region 30 of dimensions that are smaller than those ofphotoresist mask 16. The extent and location of the undercuttingdetermines the amount to which the dimensions of the resulting shapedopening vary from the dimensions of photoresist mask 16.

[0261] Thus, appropriate selection of the angle of implantation affectsthe amount of change in the dimensions of the shaped opening that occursfrom the dimensions of an island of photoresist mask 16 situated aboverelatively unimplanted portion 30. For instance, selecting an angle ofimplantation orthogonal to semiconductor wafer 10 will allow the leastamount of undercutting, and will result in a substantially uniformreduction in dimensions from the island of photoresist mask 16.Implanting at a non-orthogonal angle will result in a substantial amountof implanted ions in the region under and interior of masking layer 16and thus, a substantial reduction in the dimensions of the shapedopening from the dimensions of the island of photoresist mask 16.

[0262] Selection of the angle of implantation can also be used tomaintain a uniform profile of the shaped opening. FIG. 2 illustrates anembodiment wherein polysilicon layer 14 is being implanted with ions 20having trajectory 18 with an angle of implantation from the surface ofpolysilicon layer 14. By rotating semiconductor wafer 10, or varying thedirection of the implanted ions while maintaining a constant angle ofimplantation, ions 20 can be implanted with a consistent depth ofpenetration under the edges of photoresist mask 16 on all sides thereof,and thus the dimensions of the shaped opening will be uniformly reducedon all sides from the dimensions of photoresist mask 16.

[0263] As an example of a further manner of selecting the ionimplantation parameters to vary the dimensions of the shaped opening,selecting a heavier ion implantation dose or a greater implantationenergy will cause a greater amount of implantation under the edge ofmasking layer 16 and thus, a greater reduction in the dimensions of theshaped opening. The choice of material used in forming the maskingsubstrate also affects the amount of implantation under the mask edge.The use of a masking substrate material that is more impervious to theimplanted ions will reduce implantation under the mask edge, while usinga less impervious masking substrate will allow more implantation underthe mask edge.

[0264] A further manner of controlling the profile of the resultantshaped opening is to conduct the ion implantation operation in multipleimplantation stages. FIG. 3 is an illustration of an implantationconcentration profile resulting from three hypothetical implantationstages, each conducted with a different angle of implantation. Showntherein is a dashed line 22 representing a uniform depth of penetrationof ions under the edges of photoresist mask 16.

[0265] A first implantation concentration profile curve 24 representsthe results of a first implantation stage. The first implantation stageis conducted with an angle of implantation that is relatively steep, andthat is conducted with an implantation dose and range of implantationenergy selected to implant ions to a desired penetration. A secondimplantation concentration profile curve 26 represents the results of asecond implantation stage that is conducted with an angle ofimplantation that is less steep than angle of implantation for profilecurve 24. The second implantation stage is conducted with a consistentdose and a consistent or slightly higher range of implantation energythan that of the first implantation stage, and thus a secondimplantation concentration profile curve 26 is deeper than firstimplantation concentration profile curve 24. A third implantationconcentration profile curve 28 represents the results of a thirdimplantation stage that is conducted with an angle of implantation thatis less steep than angle of implantations for either of profile curves24, 26. The third implantation stage will preferably be conducted with aconsistent dose and a consistent or slightly higher range ofimplantation energy than that of the first and second implantationstages and consequently, third implantation concentration profile curve28 is deeper within polysilicon layer 14 than first and secondimplantation concentration profile curve 24, 26.

[0266] As can be readily observed from the chart of FIG. 3, multipleimplantation stages are useful to achieve a uniform implantationconcentration profile that could not be provided by a singleimplantation stage. By varying the angle of implantation in othermanners, relatively unimplanted region 30 of polysilicon layer 14 canalso be tailored to have other selected shapes. Of course, implantationparameters other than the angle of implantation can also be varied foreach of the multiple implantation stages. For instance, varying theimplantation energy or a range of the implantation energy will result inimplanted portions having profiles that extend to different depths.Different masking substrates can be used for different implantationstages, and the patterns of the masking substrates can be varied for thedifferent implantation stages to form implanted regions with differentprofiles.

[0267] After the ion implantation operation is conducted, photoresistmask 16 is removed from polysilicon layer 14. Exposed unimplanted region30 has a desired shape through the selection of the ion implantationparameters in the manner discussed above. After removing photoresistmask 16, an optional heat treatment operation can be conducted. Heattreatment diffuses ions 20 to further smooth the implantationconcentration profile of ions 20, and may also increase the depth ofpenetration of ions 20 under the edges of photoresist mask 16, therebyfurther reducing the dimensions of the shaped opening. If a sharperprofile of the resulting shaped opening is desired, ions 20 are notdiffused prior to conducting an etching process which is selective tosilicon-containing material.

[0268] Once the ion implantation operation has been conducted andphotoresist mask 16 has been removed, an etching process which isselective to implanted silicon-containing material is conducted. Theetching process etches portions of the volume of silicon-containingmaterial having less than an implanted ion threshold concentration at afaster rate than the etching process etches portions of the volume ofsilicon-containing material having an implanted ions thresholdconcentration and above. Silicon-containing material implanted with ionsbeyond the threshold concentration is not substantially removed by theetching process which is selective to implanted silicon-containingmaterial, and silicon-material implanted to less than the thresholdconcentration is substantially removed.

[0269] As a result, relatively unimplanted region 30 that is notimplanted with ions 20 up to the threshold concentration is etched at afaster rate than the remainder of polysilicon layer 14 that is implantedwith ions 20 Up to or above the threshold concentration. Of course, if alayer of material other than polysilicon layer 14 is being used, anetching process is correspondingly used which etches portions of thespecific type of material being used that are not implanted with ions upto a threshold concentration at a faster rate than the etching processetches portions of the specific type of material that are implanted withions up to the threshold concentration.

[0270] By way of example, the inventive method provides or creates lowand high stress portions of a volume of a material, followed by removalof the high stress portion(s). In etching processes that are selectiveto the low stress portions of the volume of the material and that etchthe high stress portions of the volume of the material, preferredetchants include an etchant having a pH greater than 7 and morepreferably not less than 9, an organic base, an inorganic base, anetchant that contains ammonia, a basic etchant that does not containGroup I or Group II metals, tetraethylammonium hydroxide,tetrabutylphosphonium hydroxide, tetraphenylarsonium hydroxide, KOH,NaOH, and tetramethyl ammonium hydroxide (TMAH). Preferably, the volumeof the material is composed of a silicon-containing material and/or agermanium-containing material. Although the examples discussed belowdescribe the use of TMAH as an etchant for a silicon-containingmaterial, the foregoing etchants are also contemplated to etch siliconand/or germanium containing materials in processes to fabricate thevarious structures described below.

[0271] One example of an etching process which is selective to lowstress or implanted silicon-containing material comprises a tetramethylammonium hydroxide (TMAH) wet etch. The TMAH wet etch is preferablyadministered as an etchant solution into which semiconductor wafer 10 isimmersed.

[0272] Preferred concentrations of the TMAH wet etch etchant solutioncomprise from about 0.1 weight percent TMAH in a deionized watersolution and higher. More preferably, a concentration from about 1 toabout 10 weight percent TMAH in a solution, and most preferably about2.5 weight percent TMAH in a solution can be used as the TMAH wet etchetchant solution. The TMAH wet etch is preferably conducted at atemperature in a range from about 5 C to about 50° C., and morepreferably, in a range from about 20 C to about 30° C. Most preferably,the TMAH wet etch is conducted at about 30° C.

[0273] The implanted portion of the volume of silicon-containingmaterial is preferably implanted with a threshold concentration of ionsin a range from about 1×10¹⁵ ions per cm³ of silicon-containing materialto about 1×10²² ions per cm³ of silicon-containing material. Morepreferably, the threshold concentration is in a range from about 5×10¹⁸ions per cm³ of silicon-containing material to about 5×10¹⁹ ions per cm³of silicon-containing material. Most preferably the thresholdconcentration is about 1×10¹⁹ ions per cm³ of silicon-containingmaterial. Relatively unimplanted portion 30 is preferably substantiallyunimplanted with ions 20.

[0274] The relationship of etch rate to implanted ion concentration forthe TMAH wet etch is illustrated in FIG. 5, wherein representative etchrates of implanted polysilicon are given in angstroms per minuterelative to ion implantation concentration, which is given in ions percm³. FIG. 5 illustrates that, at or around a concentration of 1×10¹⁹ions per cm³ of silicon-containing material, the etch rate using the wetetch of the present invention begins to fall and continues to fall untilan inflection point is reached at or around 1×10¹⁹ ions per cm³ ofsilicon-containing material.

[0275] A high implanted ion concentration will have a higher etchmaterial removal rate than a low implanted ion concentration. In thation implantation reduces the stress in a material, it is believed thatthe material removal rate of the etch is related to stress in thematerial. Heating the material, such as by annealing, will reduce thestress in the material and will diffuse atomic particles, such asimplanted ions, in the material. As such, it is preferable to maintainthe material within a predetermined temperature range after stressreduction and before the selective material removal to avoid a change instress of the material.

[0276] With typical implantation and etching parameters, the thresholdconcentration is between about 5×10¹⁸ and about 5×10¹⁹ ions per cm³ ofsilicon-containing material. Of course, the implanted portion can beimplanted with ions in excess of 5×10¹⁹ ions per cm³ ofsilicon-containing material, but the excess ions have not been found tosubstantially increase the selectivity to implanted portions of thesilicon-containing material.

[0277] When conducting the TMAH wet etch, traditional dopant ions thatare known to change the electrical properties of polysilicon layer 14can be utilized in the ion implantation operation. A preferred dopantion for which satisfactory results have been observed is phosphorous.Arsenic and boron are also predicted to be satisfactory dopant ions.Other ions including the Group IIIA and VA elements can be selected,according to a desired doping scheme. Silicon ions are alsosatisfactorily.

[0278] Inert ions that do not alter the electrical properties ofpolysilicon layer 14 can be implanted. Implantation of inert ions isuseful, for instance, where the silicon-containing material or anothermaterial adjacent the silicon-containing material is doped in a specificmanner in order to exhibit certain electrical properties, and it isdesired that those electrical properties not be altered. One suchexample is the construction of a CMOS integrated circuit. Implantingpolysilicon layer 14 with P-type or N-type dopants can cause diffusionduring subsequent procedures involving heat treatment of the dopantsinto adjacent N-type or P-type active regions. The diffusion of dopantions of an opposite type into these doped regions can alter the functionof the N-type or P-type active regions. Ions being implanted could alsoovershoot the intended implanted regions into underlying N-type orP-type active regions. Thus, implanting phosphorous, for example, couldalter the electrical characteristics of the P-type regions, whileimplanting argon would maintain the specific electrical properties ofboth the P-type and the N-type regions. In such situations, inert ionscan be implanted such that later diffusion of the inert ions will beelectrically neutral.

[0279] In a further aspect of the present invention, ions can beimplanted in multiple implantation stages using a combination of dopantions and inert ions. Thus, an initial ion implantation operation couldbe conducted with a relatively low implantation energy range or arelatively shallow angle of implantation to implant to a shallow depthusing dopant ions, such as phosphorous. A subsequent, deeper ionimplantation operation could be conducted with inert ions such as argon.Accordingly, when implanting ions into a region of polysilicon layer 14located over an underlying material for which it is not desired to alterthe electrical properties, such as an active region, any ionsovershooting into the underlying material will not alter the electricalproperties of the material. Also, as only the inert ions are in closecontact with the underlying material, dopant ions are not diffused intothe underlying material.

[0280] Since it is not necessary to dope polysilicon layer 14 in anyspecific manner in order to successfully conduct the etching processwhich is selective to implanted silicon-containing material, differenttypes of ions can be implanted either together or at different times toachieve the desired implantation dopant concentration profile.Additionally, different portions of polysilicon layer 14, or any othersilicon-containing material being patterned, could be implanted to aproper threshold concentration at different implantation stages withdifferent types of ions, and the etching process that is selective toimplanted silicon-containing material would still be selective to eachof the different portions of polysilicon layer 14.

[0281] In addition to not requiring a specific dopant, the etchingprocess of the present invention which is selective to implantedsilicon-containing material is not reliant upon an activation ordiffusion of the implanted ions with a heat treatment operation. Thus,conducting a heat treatment operation is optional. As mentioned above,the heat treatment operation, usually conducted as an anneal, typicallydiffuses ions 20 laterally, which rearranges the implantationconcentration profile and may thus be undesirable. Rearrangement of theimplantation concentration profile reduces control over the dimensionsof the resulting shaped opening. Conducting the etching process which isselective to implanted silicon-containing material without annealingresults in a sharper ion concentration profile, which is often moredesirable than the diffusion of ions that results from a heat treatmentoperation.

[0282] In an additional aspect of the present invention, in situ dopedsilicon-containing material is removed at a lower material removal ratethan that of undoped silicon-containing material when using the TMAH wetetch. In situ doped silicon-containing material is not, however, removedat as low a material removal rate as implanted silicon-containingmaterial. Rather, the material removal rate is about three times lessthan that of undoped silicon-containing material. Consequently,polysilicon layer 14 can be in situ doped with any type of ions prior toion implantation, and the method as described above of ion implantationand selective etching can still be conducted successfully. Ifpolysilicon layer 14 is in situ doped prior to ion implantation, it ispreferred that the in situ doping form a concentration of less thanabout 1×10¹⁹ ions per cm³ of polysilicon.

[0283] Of course, other satisfactory etchants that remove unimplantedsilicon-containing material at a faster rate than implantedsilicon-containing material can be used as an etching process which isselective to implanted silicon-containing material. For instance, basicsolutions can be employed, one example of which is potassium hydroxide(KOH).

[0284] The result of conducting the etching process which is selectiveto implanted silicon-containing material is shown in FIG. 6, wherein canbe seen a resulting shaped opening, in the form of a hole 32.Penetration of ions under the edges of photoresist mask 16, seen in FIG.2, caused hole 32 to have dimensions that are reduced from thedimensions photoresist mask 16 with which it was patterned. Throughappropriate selection of the ion implantation parameters, hole 32 can beformed with dimensions smaller than that achievable by conventionalphotolithography. For instance, for a width of photoresist mask 16within commercial photolithography resolutions, such as 0.35 microns,hole 32 is, in one embodiment, formed with a width of about 0.2 micronsor less.

[0285] An alternate embodiment of the first method of the presentinvention is illustrated in FIGS. 7 through 9. Under this alternateembodiment, polysilicon layer 14, patterned with hole 32 as shown inFIG. 6, is used as a hard mask for etching an underlying layer. In sodoing, the underlying layer, which in the depicted embodiment is asilicon nitride layer 34, is formed prior to forming polysilicon layer14. Thereafter, ion implantation and etching take place, substantiallyas described above, to result in the structure of FIG. 7, wherein hole32 is shown formed over silicon nitride layer 34.

[0286] Once hole 32 is formed over silicon nitride layer 34, siliconnitride layer 34 is etched with a second etching process, usingpolysilicon layer 14 as a hard mask. The second etching process isselected to utilize an etchant that removes silicon nitride layer 34faster than it removes polysilicon layer 14. Preferably, the secondetching process removes the underlying layer anisotropically. Oneexample of an etchant that etches nitride selective to polysilicon,given by way of example, is hydrofluoric acid. A dry etching processthat etches silicon nitride anisotropically and selective to polysiliconuses CHF₃ in a reactive ion etcher.

[0287] The results of the second etching process are shown in FIG. 8. Ahole 36 is formed in silicon nitride layer 34 having substantially thesame dimensions as hole 32 in polysilicon layer 14. Thus, layers otherthan polysilicon layer 14, or the specific layer of silicon-containingmaterial employed, can also be patterned such that the geometry of theshaped opening can be tailored in smaller dimensions than conventionalphotolithography is capable of. Once the structure of FIG. 8 is formed,polysilicon layer 14 is typically removed with an etching process thatetches polysilicon selective to silicon nitride.

[0288] One application of the use of the embodiment of FIGS. 7 through 9of forming shaped openings to form a hard mask is shown in FIG. 9,wherein polysilicon layer 14 has been removed, and the furtherprocedures of depositing and patterning a material in hole 36 has beenconducted. The material deposited in hole 36 in this embodimentcomprises ovonic chalcogenide material, and forms a plug 38 suitable foruse in a programmable resistor. This embodiment thus meets the need forforming chalcogenide programmable resistors in a hole havingsub-photolithography resolution dimensions.

[0289] In a further application, hole 36 could be filled with aconductive material to form an interconnect line. In so doing, hole 36would preferably have the form of a trench of a desired length extendingin a direction into the page of FIG. 9. The trench need not be straight,but could be non-linear. Integral sections of different widths couldalso connect to the trench and to larger structures. Thus, with the useof a photoresist mask having a width within conventionalphotolithography resolution limits, such as about 0.35 microns, a muchnarrower interconnect line can be formed. The interconnect line is, inone embodiment, formed with a width of about 0.2 microns or less.

[0290] A raised shaped structure can also be formed under the firstmethod by forming a shaped opening that surrounds a protruding intactregion of polysilicon layer 14. The raised shaped structure has aprofile that is tailored by tailoring the shape of the shaped openingthat is used to form the raised shaped structure. Representativeapplications of the first method in which various types of raised shapedstructures are formed will be discussed below.

[0291] As described herein, the first method can be used to control thedimensions and profile of a shaped opening with great flexibility,control, and precision. As a result, the shaped opening can be formedwith smaller dimensions than those of which conventionalphotolithography is capable. Applications which require such dimensions,such as the formation of ovonic cells of programmable resistors and theformation of fine interconnect lines, become practical under the presentinvention. The first method is further useful in that the procedure usedto form the shaped opening is simpler than conventional alternatives tophotolithography. Such simplicity is evidenced in that the first methodis conducted without the need for multiple material depositionoperations and without the need for conducting a dry etching process.Accordingly, a high throughput and a low cost fabrication process isproposed by the first method.

[0292] 2. Shaped Structures Formed with an Etching Process which isSelective to Unimplanted Silicon-containing Material

[0293] A second method of the present invention is illustrated in FIGS.10 through 19. In the second method, a shaped structure is formed on asemiconductor substrate with an etching process which, converse to theselective etching process of the first method, etches portions of alayer of silicon-containing material selectively to unimplantedsilicon-containing material.

[0294] A shaped structure can be formed under the second method havingdimensions smaller than those within the capabilities of conventionalphotolithography processes. The shaped structure can comprise, forinstance, a semiconductor device feature such as a gate region, a plugor a contact.

[0295] In one manner of conducting the second method, the shapedstructure is formed from polysilicon, and the semiconductor substratecomprises a semiconductor wafer. Accordingly, the layer ofsilicon-containing material comprises a polysilicon layer. Thus, asillustrated in FIG. 10, a semiconductor wafer 40 is provided and apolysilicon layer 44 is formed on a silicon substrate 42 ofsemiconductor wafer 40. Polysilicon layer 44 is formed of intrinsicpolysilicon and is deposited with conventional methods as discussed forthe first method above.

[0296] After formation of polysilicon layer 44, polysilicon layer 44 ismasked with a masking substrate such as a photoresist mask 46, as shownin FIG. 11. Photoresist mask 46 could be substituted with a hard mask ofa material such as an oxide or nitride of silicon, or of any othermaterial impermeable to ion implantation. One further suitable materialfor photoresist mask 46 is photosensitive polyamide. Photoresist mask 46is patterned to cover the region or regions of polysilicon layer 14 thatare intended to remain after an etching process which is selective tounimplanted silicon-containing material is conducted. Portions which arenot intended to remain are left exposed to ion implantation.

[0297] Once polysilicon layer 44 is masked, an ion implantationoperation is conducted. The ion implantation operation can be localized,as illustrated in FIG. 12 by arrows 48, by focusing on the area ofpolysilicon layer 44 that is close to photoresist mask 46.Alternatively, the ion implantation operation can be conducted over theentirety of polysilicon wafer 40. The ions 50 that are implanted by theion implantation operation are of a type selected in accordance with theselection of the etching process which is selective to unimplantedsilicon-containing material. The etching process which is selective tounimplanted silicon-containing material and the selection of the type ofions to be implanted will be discussed in greater detail below. The ionimplantation parameters are preferably selected in the manner, discussedabove for the first method, that tailors the resulting shaped feature,though the results will be reversed, as it is the implanted portions ofpolysilicon layer 44 that are to be removed, rather than portions thatare not substantially implanted.

[0298] The ion implantation operation is conducted with an angle ofimplantation from a top surface of polysilicon layer 44, as shown inFIG. 12. The angle of implantation can be an angle orthogonal to the topsurface of silicon wafer 40, as discussed for the first method.Alternatively, and as shown in FIG. 12, the angle of implantation can beother than orthogonal to the top surface of silicon wafer 40, in orderto result in the implantation of ions beneath photoresist mask 46. Thedegree to which ions 50 penetrate beneath photoresist mask 46 isselectable by the implantation energy and the angle of implantation.

[0299] The ion implantation operation is optionally conducted inmultiple stages in order to regulate the depth and concentration of theimplanted ions. The result of ion implantation conducted in multiplestages is the same as that which is graphically depicted in FIG. 3 inconjunction with the discussion of the first method above. Inconstructing a shaped structure, the ion implantation operation can beconducted in several implantation stages and with several differentangles in order to implant ions 50 with a uniform concentrationthroughout a depth of penetration. The ion implantation operation canalso be conducted with differing levels or ranges of implantation energyor differing ion doses in each stage in order to tailor the profile ofthe shaped feature as discussed for the first method.

[0300] After conducting the ion implantation operation, a substantiallyanisotropic etching process, hereafter referred to as the initialetching process, is conducted to reduce polysilicon layer 44 to apatterned polysilicon block 52 seen in FIG. 13. Polysilicon block hasessentially the same lateral dimensions as photoresist mask 46. Theimplantation of ions 50 under photoresist mask 46 causes the occurrenceof underlapping implanted regions 52 a, formed in patterned polysiliconblock 52.

[0301] The initial etching process can be conducted with any suitableetching chemistry that etches polysilicon selective to photoresist mask46. It is preferred that the initial etching process be anisotropic inorder to maintain the pattern of photoresist mask 46 and thereby bettercontrol the geometry of the resulting shaped feature. In one embodiment,the initial etching process comprises a dry etching process such as RIEor MRIE.

[0302] After conducting the initial etching process, the etching processwhich is selective to unimplanted silicon-containing material isconducted. The etching process which is selective to unimplantedsilicon-containing material can be conducted after photoresist mask 46is removed, or the etching process which is selective to unimplantedsilicon-containing material can be conducted with photoresist mask 46still in place. The option of removing photoresist mask 46 addsflexibility to the method of the present invention. Photoresist mask 46is removed prior to etching typically in situations where the height ofthe shaped structure is not critical, because etching withoutphotoresist mask 46 in place will reduce the height of the resultingshaped structure somewhat.

[0303] The type of ions 50 that are implanted is selected in accordancewith the etching process which is selective to unimplantedsilicon-containing material in order to cause implanted portions ofpolysilicon layer 44 to etch faster than relatively unimplanted portionsof polysilicon layer 44. When conducting the selective etching processwhich is selective to unimplanted silicon-containing material beforestripping photoresist mask 46, it is preferable to wet etch. Morepreferably, an acid-based etching process is used, such as a wet etchfor polysilicon that incorporates water, acetic acid, hydrofluoric acid,and nitric acid.

[0304] When conducting the etching process which is selective tounimplanted silicon containing material after photoresist mask 46 isremoved, either the wet etching process described above is conducted, ora conventional isotropic dry etching process is conducted. In eitheretching process, implanted silicon-containing material has a highermaterial removal rate than that of unimplanted silicon-containingmaterial.

[0305] In a further embodiment, the etching process which is selectiveto unimplanted silicon-containing material is a KOH etching process,where the silicon-containing material is counter doped. When using theKOH counter-doped etch, polysilicon layer 44 as seen in FIG. 12, isinitially intrinsically doped with P-type dopants such as boron, and theion implantation process uses N-type dopants such as phosphorous orarsenic to counter-dope polysilicon layer 44. The ions are implanted inareas of the silicon-containing material that are to be removed. Athreshold concentration of ions is achieved, which concentration isdetermined by the particular type of etching process which is selectiveto unimplanted silicon-containing material. The particular ionimplantation and etching parameters are dependent upon the concentrationof implanted ions that is achieved.

[0306] A shaped polysilicon structure 54 results from the etchingprocess, as shown in FIG. 14. The size of shaped polysilicon structure54, and particularly the degree to which the dimensions of shapedpolysilicon structure 54 vary from the dimensions of photoresist mask46, can be controlled by selection of the ion implantation parameters asdiscussed above, particularly by selecting the implantation energy andangle of implantation. Due to this capability, better control of thedimensions of patterned polysilicon structure 54 is obtained.

[0307] Patterned polysilicon structure 54 may be formed in any raisedshape, and might comprise in cross-section, for example, a square gateregion, an elongated interconnect line, or a vertically extendinginterconnect structure. By using a photoresist mask having a widthwithin commercial photolithography resolution limits, a raised shapedstructure such as an interconnect line or a gate region can be formedthat has a smaller width than the photoresist mask. In one embodiment,photoresist mask 46 is an island with a width of about 0.35 microns, andthe shaped polysilicon structure 54 has a width of about 0.2 microns orless.

[0308] A further embodiment of the second method is illustrated in FIGS.15 and 16. In this embodiment, once patterned polysilicon structure 54is formed as described above, polysilicon structure 54 is employed as asacrificial hard mask for forming a shaped structure from a materialother than polysilicon. When so doing, prior to providing polysiliconlayer 44, an underlying layer of the material to be formed into a shapedstructure is formed. In the depicted embodiment, the underlying layercomprises a silicon dioxide layer 58 as shown in FIG. 15. Once silicondioxide layer 58 is formed, the second method is conducted substantiallyas described above to form patterned polysilicon structure 54 seen inFIG. 15. After the formation of polysilicon structure 54, silicondioxide layer 58 is etched using polysilicon structure 54 as a hard maskas shown in FIG. 16. In so doing, an etching process is employed thatetches silicon dioxide layer 58 at a faster rate than it etchespolysilicon. A patterned structure 60 is then formed out of silicondioxide and has substantially the same dimensions as polysiliconstructure 54. As polysilicon structure 54 is produced withsub-photolithographic dimensions, so also can patterned structure 60 ofFIG. 16 be produced with sub-photolithographic dimensions.

[0309] Shaped polysilicon structure 54 may also be used as a sacrificialspacer for forming holes, trenches, or other shaped openings as shown inthe further embodiment of FIGS. 17 through 19. In FIG. 17, a shapedpolysilicon structure 54 is formed in the manner described for FIGS. 9through 14. Shaped polysilicon structure 54 is created with thedimensions of the desired shaped opening and is subsequently coveredwith a blanket layer of material, such as a silicon dioxide layer 62 inwhich the shaped opening is to be formed. As shown in FIG. 18, silicondioxide layer 62 is then planarized. In one embodiment, planarization isachieved with CMP. The structure of FIG. 18 can be used, for example, asan interconnect structure.

[0310] In a further alternative embodiment also shown in FIG. 19, shapedpolysilicon structure 54 is removed to form a shaped opening. In formingthe shaped opening, shaped polysilicon structure 54 is removed with anetching process that etches polysilicon selective to silicon dioxidelayer 62. The resulting shaped opening, illustrated in the form of ahole 64, is suitable for making contact between underlying siliconsubstrate 42 and the surface of silicon dioxide layer 62. Hole 64 couldalso be filled with chalcogenide material, as in the embodiment of FIG.9 in the first method, to form an ovonic cell of a programmableresistor.

[0311] Thus, the second method of the present invention is used topattern a layer of polysilicon or other material to form a shapedstructure that has smaller dimensions than can be formed withconventional photolithography. The method is flexible and controllable,allowing precise tailoring of the resulting shaped structure, and issimpler to conduct and more efficient than alternative processes tophotolithography such as the disposable spacer flow process discussedabove. As a result of the increased stability and efficiency, theintegrated circuit manufacturing process can be conducted with increasedthroughput and reduced cost.

[0312] 3. Formation of a Polysilicon Plug with the Etching Process whichis Selective to Implanted Silicon-containing Material

[0313] A third method of the present invention is illustrated in FIGS.20 through 23. The third method uses the etching process which isselective to implanted silicon-containing material, described above forthe first method, to form an interconnect structure. In the depictedembodiment, the interconnect structure comprises a polysilicon plug.

[0314]FIG. 20 shows, for the third method, an embodiment wherein anactive region is placed in electrical communication with an overlyingstructure through the use of the interconnect structure. A semiconductorsubstrate as shown in the form of a semiconductor wafer 70 from which anintegrated circuit is to be formed. Provided on semiconductor wafer 70is a silicon substrate 72. Provided on silicon substrate 72 are aplurality of active regions 74 which in the depicted embodiment comprisesource/drain regions of MOS transistors. Formed on silicon substrate 72adjacent active regions 74 are a plurality of gate regions 76. Gateregions 76 are each provided with an electrically conductive gate layeron a gate oxide layer and have the sides and top thereof covered with aninsulating spacer 78.

[0315] The third method can be used to electrically connect a chargeconducting region other than an active region to an overlying structure.For instance, in one embodiment, the interconnect structure comprises avia and the charge conducting region comprises on underlying contact.

[0316]FIG. 21 shows a layer of silicon-containing material, in thedepicted embodiment a polysilicon layer 80, formed over gate regions 76and active regions 74. Polysilicon layer 80 is deposited in any knownand suitable manner, and preferably comprises intrinsic polysilicon, asdefined above.

[0317]FIG. 22 shows a masking substrate formed over polysilicon layer80. The masking substrate is depicted in FIG. 22 in the form of asilicon nitride hard mask 82. Silicon nitride hard mask 82 coversportions of polysilicon layer 80 that are to be removed, leaving exposedthe portions of polysilicon layer 80 that are to remain. Consequently,the portion of polysilicon layer 80 located over active regions 74,where the polysilicon interconnect structure is to be formed, is leftexposed. Alternatively, the masking substrate can also comprise oxide,photoresist, or other materials that serves as a barrier to implantedions.

[0318]FIG. 22 depicts the implantation of ions 84 into the unmaskedportions of polysilicon layer 80. Ion implantation is conducted oncesilicon nitride hard mask 82 is in place. The implantation of ions 84 isrepresented in FIG. 22 by downward pointing arrows 84. Ions 84 are of atype chosen, as discussed above, in conjunction with an etching processthat is to be conducted at a further stage in the third method. In oneembodiment, ions 84 comprise phosphorus ions. The implantation of ions84 creates a relatively unimplanted portion 80 a and a heavily implantedportion 80 b in polysilicon layer 80. Relatively unimplanted portion 80a and heavily implanted portion 80 b correspond to the portions ofpolysilicon layer 80 that are to be removed and those that are toremain, respectively.

[0319] The shape of heavily implanted portion 80 b can be tailored byvarying the ion implantation parameters as described above in thediscussion of the first method. Ion implantation can be conducted inmultiple implantation stages with the ion implantation parameters variedfor each of the implantation stages, and can be conducted with acombination of dopant ions and inert ions as described for the firstmethod above.

[0320]FIG. 23 shows the results of a subsequently conducted etchingprocess which is selective to implanted silicon-containing material. Theetching process which is selective to implanted silicon-containingmaterial is conducted under the third method substantially as describedfor the first method, with etching parameters that can be varied asdescribed therein to further tailor the shape of the interconnectstructures being formed. The etching process which is selective toimplanted silicon-containing material results in the formation of aninterconnect structure, several of which are shown in the depictedembodiment as polysilicon plugs 86 and 88.

[0321] The third method forms a polysilicon plug in a simplified mannerin which the conventional steps of depositing and reflowing aninsulating layer are eliminated. The dry etching process, typicallyconducted to form interconnect structure openings through the insulatinglayer, is also eliminated. Also eliminated is the CMP process that istypically conducted after depositing polysilicon into the contact holes.The improvement reduces fabrication throughput and cost. Additionally,the third method adds flexibility to the integrated circuitmanufacturing process, as the interconnect structures can be tailored toa specific profile through the appropriate selection of ion implantationand etching process parameters.

[0322] 4. Formation of a Stacked Container Capacitor Cell with theEtching Process which is Selective to Implanted Silicon-containingMaterial

[0323] A fourth method of the present invention is a variation of thethird method, and is illustrated in FIGS. 24 and 25. In the fourthmethod, a stacked capacitor storage node is formed above a chargeconducting region. In the depicted embodiment of the fourth method, apolysilicon interconnect structure is also formed concurrently with thestacked capacitor storage node.

[0324] The capacitor storage node is preferable formed on asemiconductor substrate. Initially, there is formed a volume of anelectrically conductive silicon-containing material located upon aplurality of insulated gate stacks situated upon the semiconductorsubstrate. Adjacent to and between each pair of insulated gate stacks inthe plurality of gate stacks is a charge conducting region that issituated within the semiconductor substrate. The volume of theelectrically conductive silicon-containing material also formed uponeach of the charge conducting regions. Next, a masking substrate isformed upon the volume of the electrically conductive silicon-containingmaterial such that it is adjacent to and above each of the chargeconducting regions, as well as above each the insulated gate stack. Amasked portion of the volume of the electrically conductivesilicon-containing material is masked by the masking substrate, and anunmasked portion of the volume of the electrically conductivesilicon-containing material is unmasked by the masking substrate.

[0325] The next step is to form an additional layer of the electricallyconductive silicon-containing material over the masking substrate, andthen selectively remove, in an anisotropic etch, the silicon-containingmaterial from the additional layer of the electrically conductivesilicon-containing material over the masking substrate to form therefromat least one spacer therefrom that extends from the volume of theelectrically conductive silicon-containing material adjacent to and incontact with the masking substrate.

[0326] After the at least one spacer is formed, ions are then implantedinto the volume of the electrically conductive silicon-containingmaterial and the additional layer of the electrically conductivesilicon-containing material so as to form an ion concentration in theunmasked portion, and an ion concentration in the masked portion that issubstantially lower than that of the unmasked portion. After theimplantation step, the masking substrate is removed.

[0327] Silicon-containing material is then selectively removed from theunmasked portion at a material removal rate that is at least two timesgreater than that of the unmasked portion to form from the firstimplanted portion a capacitor storage node having the at least onespacer extending therefrom.

[0328] Referring now to the FIGS. 20 and 21, the fourth method isconducted essentially as described above for FIGS. 20 and 21. Thus, asshown in FIG. 20, a semiconductor wafer 70 from which the integratedcircuit is to be formed is provided and has provided thereon a siliconsubstrate 72. Also provided on semiconductor wafer 70 are active regions74 a and 74 b, which in the depicted embodiment comprise source/drainregions of MOS transistors. Formed over semiconductor substrate 72 andadjacent active regions 74 a and 74 b are gate regions 76. Gate regions76 are encapsulated within insulating spacers 78. A layer ofsilicon-containing material depicted as a polysilicon layer 80 is formedover active regions 74 a and 74 b. Once again, polysilicon layer 80 ispreferably formed of intrinsic polysilicon as defined for the firstmethod. A masking substrate is formed over polysilicon layer 80 and inthe depicted embodiment has the form of a silicon nitride hard mask 82.Silicon nitride hard mask 82 is patterned with openings above activeregion 74 a and 74 b as shown in FIG. 24. Optionally, an ionimplantation process can then be performed.

[0329] The fourth method differs from the third method in that spacers90 are formed on polysilicon layer 80 overlying active regions 74 a and74 b. To form spacers 90, polysilicon layer 80 is formed higher againstsilicon nitride hard mask 82 as is shown in FIG. 22. To do so,polysilicon layer 80 is further formed by an additional deposition ofpolysilicon after silicon nitride hard mask 82 has been formed.Polysilicon layer 80 is then selectively removed, preferably in a spaceretch, to form spacers 90. Spacers 90 are attached to the proximal edgesof adjoining islands of silicon nitride hard mask 82, as shown in FIG.24. Preferably, spacers 90 are formed of a silicon-containing material,such as polysilicon.

[0330] After spacer formation, an ion implantation operation isconducted to implant ions into unmasked portions of polysilicon layer80. The ion implantation operation is conducted essentially in themanner described for FIG. 22 such that relatively unimplanted portions80 a and heavily implanted portions 80 b are formed in polysilicon layer80.

[0331] The shape of heavily implanted portion 80 b can be tailored byappropriate selection of the ion implantation parameters as describedabove for the first and second methods. Ion implantation can beconducted in multiple stages with parameters varied between the stages,and can be conducted with a combination of dopant ions and inert ions asdescribed above for the first method.

[0332] After ion implantation is conducted, an etching process which isselective to implanted silicon-containing material is conducted suchthat relatively unimplanted portions 80 a are etched away and implantedportions 80 b are left remaining. The etching process which is selectiveto implanted silicon-containing material is conducted in substantiallythe same manner as described above in conjunction with FIG. 23. Theetching process parameters can be selected in the manner described forthe first method to further tailor the shape of the resulting stackedcapacitor storage node and polysilicon interconnect structures. FIG. 25shows the result of the etching process which is selective to implantedsilicon-containing material, wherein there is shown a completed stackedcapacitor storage node 92 as well as polysilicon plugs 86 and 88.Stacked capacitor storage node 92 is integrally connected with anunderlying capacitor base 92 a, which connects stacked capacitor storagenode 92 to underlying active region 74 a. The further procedures ofdepositing a dielectric layer and an upper capacitor plate are typicallyconducted to complete the stacked capacitor.

[0333] The fourth method forms a stacked capacitor storage node that isintegrally formed with a capacitor base, thereby providing a largerstorage area for greater charge retention capacity. The stackedcapacitor storage node can be formed concurrently with the capacitorbase, thereby eliminating a separate polysilicon plug formation process,reducing the number of required material deposition and photoresistmasking operations, increasing throughput, reducing cost, andeliminating opportunities for errors to occur. Additionally, greaterflexibility is provided by the fourth method, as interconnect structurescan be concurrently formed over adjacent active regions with theformation of the stacked capacitor storage node.

[0334] 5. Formation of Polysilicon Plugs in a CMOS Process Flow with theEtching Process which is Selective to Implanted Silicon-ContainingMaterial

[0335] A fifth method, and a further variation of the third method, isillustrated in FIGS. 26 through 30. In the fifth method, an interconnectstructure is formed during a CMOS process flow on an NMOS portion of asemiconductor substrate without destroying the doped active regions ofeither the NMOS or PMOS portions.

[0336] Initially, under the fifth method, conventional CMOS process flowis followed until a CMOS circuit is formed. By way of the example seenin FIG. 26, a semiconductor wafer 100 has formed thereon a siliconsubstrate 102 that is functionally divided into a PMOS portion 102 a andan NMOS portion 102 b. Field oxide spacer regions 104 are provided onsilicon substrate 102, as are gate regions 106, 108, and 110.

[0337] In FIG. 27, a masking substrate such as a photoresist mask 114 isformed over PMOS portion 102 a, leaving NMOS portion 102 b exposed.After photoresist mask 114 is formed, implantation of ions into NMOSportion 102 b is conducted using an appropriate type of ions to dope andform an NMOS active region 118 which serves as a MOS transistorsource/drain region. After forming NMOS active region 118, photoresistmask 114 is removed.

[0338]FIG. 28 shows a volume of silicon-containing material in which thedepicted embodiment is a polysilicon layer 122. Polysilicon layer 122 isdeposited over PMOS and NMOS portions 102 a, 102 b. Once polysiliconlayer 122 is deposited, a masking substrate is applied and patternedover the top of polysilicon layer 122. In the depicted embodiment, themasking substrate comprises a silicon nitride hard mask 124. Siliconnitride hard mask 124 is patterned so as to expose a portion ofpolysilicon layer 122 located above a selected NMOS active region 118that is to be provided with electrical communication through aninterconnect structure.

[0339] After the masking of polysilicon layer 122, an ion implantationoperation is conducted substantially as described above for the firstmethod. Arrows 126 indicate the ion implantation operation. The resultof the ion implantation operation is a heavily implanted portion 122 ain polysilicon layer 122 above NMOS active region 118, and asubstantially unimplanted portion 122 b elsewhere. The shape of heavilyimplanted portion 122 a can be tailored by appropriate selection of theion_plantation parameters as described above for the first and secondmethods. Ion implantation can be conducted in multiple implantationstages with the ion implantation parameters varied between the stages,including implantation with a combination of dopant ions and inert ionsas described for the first method above.

[0340] As shown in FIG. 29, after implanting ions into polysilicon layer122, silicon nitride hard mask 124 is removed and an etching processwhich is selective to implanted silicon-containing material is conductedessentially in the same manner as described above for the first method.Consequently, substantially unimplanted portion 122 b is etched away anda polysilicon plug 128 is left remaining to form an interconnectstructure. The etching process parameters can also be appropriatelyselected to tailor the resultant shape of the interconnect structure.

[0341] Further processing of the fifth method is illustrated in FIG. 30,wherein a PMOS spacer 130 is shown adjacent to PMOS gate region 106.PMOS spacer 130 is desirable in conventional CMOS structures for properalignment of active regions. Thereafter, NMOS portion 102 is masked witha masking substrate, which in the depicted embodiment is a photoresistmask 132. Appropriate dopant ions, shown as arrows 134, are subsequentlyimplanted into PMOS portion 102 a to form PMOS active regionsrepresented in the depicted embodiment by a PMOS active region 136.Photoresist mask 132 is thereafter removed, and a conventional CMOSprocess flow is then followed to complete the integrated circuit.

[0342] A polysilicon interconnect structure is formed under the fifthmethod in a CMOS process flow with less process steps than conventionalmethods. Under the fifth method, the number of photoresist maskingoperations is reduced, thereby increasing throughput, and ultimatelyreducing the cost of the integrated circuits formed thereby. Also, thesource/drain regions of the NMOS and PMOS regions are doped withoutcross-contamination from the ion implantation or etching processes.

[0343] 6. Formation of a Free-standing Wall with the Etching Processwhich is Selective to Implanted Silicon-containing Material

[0344] A sixth method of the present invention is illustrated in FIGS.31 through 34. In the sixth method, a free-standing wall is formed withthe etching process which is selective to implanted silicon-containingmaterial. FIG. 31 illustrates an initial procedure in the sixth method,wherein a semiconductor substrate is provided. In the depictedembodiment, the semiconductor substrate is a semiconductor wafer 150having thereon a silicon substrate 152. A polysilicon layer 154, formedof intrinsic polysilicon, is formed over silicon substrate 152. Amasking substrate, depicted in FIG. 31 in the form of a photoresist mask156, is formed over polysilicon layer 154. Photoresist mask 156 ispatterned with islands above each location in polysilicon layer 154wherein a free-standing wall is intended to be formed. In a firstembodiment, wherein the free-standing wall comprises a plurality ofcolumns, the islands are formed in a rectangular shape.

[0345] As shown in FIG. 32, an anisotropic dry etching process orsuitable equivalent is conducted to remove exposed portions ofpolysilicon layer 154, thereby forming patterned polysilicon blocks 158.Preferably, the aspect ratio between patterned polysilicon blocks 158 isgreater than about one. The anisotropic dry etching process is followedby an ion implantation operation which is conducted in the mannerdescribed above with respect to the first method. The ion implantationoperation is illustrated by the angled arrows seen in FIG. 32. The ionsare implanted at an angle other than orthogonal to silicon substrate 152so that the ions are implanted into one or more side surfaces ofpatterned polysilicon blocks 158. Opposing angles of implantation areused in FIG. 32 to implant opposing side surfaces of patternedpolysilicon blocks 158. It is preferable to avoid heat treatment ofsilicon wafer 150 in order to maintain a sharp concentration profile ofthe implanted ions.

[0346]FIG. 33 illustrates section line 33-33 taken from FIG. 32, whereinthe ion implantation operation, conducted without an intervening heattreatment, demarcates a sharp ion concentration profile of implantedions characterized by heavily implanted polysilicon region 154 a andrelatively unimplanted polysilicon region 154 b. To maintain aconsistent ion concentration profile, ion implantation can be conductedin multiple implantation stages in the manner discussed above for thefirst method, and specifically as discussed with respect to FIG. 3.

[0347]FIG. 34 is a cross-sectional illustration showing the results ofan etching process which is selective to implanted silicon-containingmaterial as discussed in the first method. Relatively unimplantedpolysilicon region 154 b is etched away, while heavily implantedpolysilicon region 154 a is left remaining. As a result of implantingions from two opposing angles, the centers of patterned polysiliconblocks 158 are removed, leaving two thin, free-standing columns 160formed at the location of each of patterned polysilicon blocks 158.Free-standing columns 160 extend a selected distance in a directionlooking into the page of FIG. 34. Also, free-standing columns 160 can beelongated, forming, for instance, interconnect lines. Free-standingcolumns 160 can likewise be formed as nonlinear structures. Pairs ofthin free-standing columns 160, as shown in FIG. 34, are suitable foruse as a stacked capacitor storage node.

[0348] In a further embodiment of the sixth method, photoresist mask 156of FIG. 32 is formed with an island or islands having a circular shapethat causes patterned polysilicon blocks 158 to have a correspondingcircular surface shape. Also in the further embodiment, semiconductorwafer 150 is rotated during ion implantation, or various angles are usedduring ion implantation in order to implant the periphery of the sidesurfaces of patterned polysilicon blocks 158. The ions are preferablyimplanted to a uniform depth. The resulting structure is a substantiallyannular sidewall 168 a seen in a perspective view in FIG. 38. FIG. 38 isdiscussed below with respect to the seventh method of the presentinvention.

[0349] The thickness of the free-standing wall formed by the sixthmethod, whether that of thin free-standing columns 160 or that ofsubstantially annular sidewall of FIG. 38, is determined by the ionimplantation parameters. For instance, less than an orthogonal angle ofimplantation will result a shallow ion penetration and a thickerfree-standing wall. Alternatively, a lower implantation energy willresult in a thinner free-standing wall. Further, the free-standing wallcan be thinner than can be formed by conventional photolithographymethods.

[0350] Free-standing walls of the sixth method can be formed into astructure having a high aspect ratio of which conventionalphotolithography and etching methods are incapable. The differentembodiments of the free-standing wall provide a flexibility to theintegrated circuit fabrication process. Additionally, the free-standingwall is formed in a simple and efficient manner, thereby maintaining ahigh throughput and low cost of the integrated circuit fabricationprocess.

[0351] 7. Formation of a Continuous Free-standing Wall with the EtchingProcess which is Selective to Implanted Silicon-containing Material

[0352] A seventh method is illustrated in FIGS. 35 through 38, andinvolves the formation of a continuous free-standing wall. In FIG. 35, asemiconductor substrate is provided as a semiconductor wafer 162.Semiconductor wafer 162 in the depicted embodiment is formed with asilicon substrate 164. A volume of silicon-containing material is formedover silicon substrate 164 as a polysilicon layer 166. A maskingsubstrate, in the depicted embodiment having the form of a photoresistmask 168, is thereafter applied over polysilicon layer 166 and ispatterned with photolithography. Photoresist mask 168 is patterned withcircular openings 168 a in the locations wherein continuous,free-standing walls are to be formed.

[0353] After photoresist mask 168 is patterned, as shown in FIG. 36, ananisotropic dry etch or equivalent etching process is conducted onpolysilicon layer 166 through photoresist mask 168. Substantiallycircular openings 166 a are formed in polysilicon layer 166 and siliconsubstrate 164 is exposed. The anisotropic dry etch is followed byimplantation of ions, illustrated by angled arrows in FIG. 36, into theside surfaces of substantially circular openings 166 a.

[0354]FIG. 37 illustrates section line 37-37 taken from FIG. 36 wherein,similar to the view of section line 33-33 of FIG. 32, ion implantationwithout an intervening heat treatment demarcates a sharp implantationconcentration profile of implanted ions characterized by heavilyimplanted polysilicon region 154 a and relatively unimplantedpolysilicon region 154 b. To maintain a uniform implantationconcentration profile, ion implantation can once again be conducted inmultiple stages in the manner discussed above for the first method.

[0355]FIG. 38 illustrates the results of further processing of theseventh method, wherein the etching process is conducted which isselective to implanted silicon-containing material discussed in thefirst method above. The etching process etches away relativelyunimplanted polysilicon region 154 b, while heavily implantedpolysilicon region 154 a is left remaining. The etching process producescontinuous free-standing walls 170 that define therein a circularchamber 170 b that is suitable for use as a stacked capacitor storagenode. Continuous free-standing walls 170 have a thickness that isdetermined by the ion implantation parameters. For instance, a less thanorthogonal angle of ion implantation will result in shallower ionimplantation and a thinner sidewall. A high implantation energy willalso result in a thicker sidewall. Further, continuous free-standingwalls 170 can be of a width that is narrower than can be formed byconventional photolithography methods.

[0356] The seventh method is an alternative to the sixth method andprovides similar advantages. It will be readily apparent to one of skillin the art that varying types of thin polysilicon sidewalls can beformed by varying the shape of open cylindrical wells 166 a and theextent of the laterally extending surfaces of open cylindrical wells 166a that are implanted.

[0357] 8. Formation of a MOS Surround-gate Transistor with the EtchingProcess which is Selective to Implanted Silicon-containing Material

[0358] An eighth method of the present invention is directed to theformation of a MOS surround-gate transistor. Initially, there isprovided a volume of a silicon-containing material extending from aplanar surface on a semiconductor substrate, where, said volume of saidof the silicon-containing material has thereon a side surface. Next, aplurality of ions are implanted into said volume of said side surface ofsaid of a silicon-containing material at a non-orthogonal angle to saidplanar surface on said semiconductor substrate. The implantation formsin said of a silicon-containing material a first implanted portion and asecond implanted portion, the first implanted portion having aconcentration of said ions that is greater than that of the secondimplanted portion.

[0359] The following step is the selective removing of thesilicon-containing material from the second implanted portion at amaterial removal rate that is at least two times greater than that ofthe first implanted portion to form a shaped structure extending fromthe planar surface on the semiconductor substrate.

[0360] The volume of the silicon-containing material extending from theplanar surface of the semiconductor substrate can be provided bydepositing a layer of the silicon-containing material on the planarsurface of the semiconductor substrate, then forming a masking substrateon the layer of the silicon-containing material, the masking substratehaving an opening therein below which is situated an unmasked portion ofthe layer of the silicon-containing material, and then anisotropicallyetching the layer of the silicon-containing material to substantiallyremove therefrom the unmasked portion and to form the volume of thesilicon-containing material extending from the planar surface of thesemiconductor substrate. Prior to the step of selectively removing thesilicon-containing material from the second implanted portion, the stepof removing the masking substrate on the layer of the silicon-containingmaterial is conducted.

[0361] In an alternative embodiment of the eight method, the opening inthe masking substrate has a closed perimeter; and the anisotropicetching of the layer of the silicon-containing material forms a voiddefined by the side surface of the volume of the silicon-containingmaterial, the side surface being a continuous surface within the void.It may also be designed into the fabrication process that the opening inthe masking substrate has a substantially circular cross-section, thatthe void defined by the side surface of the volume of silicon-containingmaterial is substantially cylindrical, and that the shaped structure hasa outside surface opposite and substantially parallel to the sidesurface, both the outside and side surfaces of the shaped structurebeing substantially circular in cross section.

[0362] Referring now to FIGS. 39 through 41, there is illustrated aneighth method of the present invention which is directed to theformation of a MOS surround-gate transistor. FIG. 39 illustrates asemiconductor substrate comprising, in the depicted embodiment, asemiconductor wafer 162 on which is located a silicon substrate 164.LOCOS spacer regions 164 a are formed on silicon substrate 164 definingan open region in the center thereof within which the surround-gate MOStransistor will be formed. A gate oxide layer 170 a is subsequentlyformed in the open region on silicon substrate 164.

[0363] In further processing of the eighth method, a continuousfree-standing wall, such as one of continuous free-standing walls 170 ofFIG. 38, is provided on gate oxide layer 170 a. It is preferred that thecontinuous free-standing wall be formed by either the sixth or seventhmethod. Thus, in one embodiment, a continuous free-standing sidewall 170is formed with the etching process which is selective to implantedsilicon-containing material of the present invention. Continuousfree-standing wall 170 need not necessarily be annular, and could be ofanother continuous shape. For instance, a continuous free-standing wallcould be used that forms a rectangle or a hexagon in cross-sectionthereof. Nevertheless, in the illustrated embodiment, a substantiallyannular continuous free-standing wall will be depicted and discussed.

[0364] Once continuous free-standing wall 170 has been formed, sidewallspacers 170 c, seen in FIGS. 39 and 40, are formed on continuousfree-standing wall 170, one at each of the interior and exteriorthereof. Once sidewall spacers 170 c are formed, ions are implanted intosilicon substrate 164 at the interior of continuous free-standing wall170 and around the exterior of continuous free-standing wall 170. Theion implantation operation, denoted by arrows 172, forms a centersource/drain region 164 b at the interior of continuous freestandingwall 170 and an outer source/drain region 164 c at the exterior ofcontinuous freestanding wall 170. Of course, one skilled in the art willappreciate that varying manners of implanting dopants to form asource/drain region can be used. For instance, the sequence of formingsidewall spacers 170 c, center source/drain region 164 b, and outersource/drain region 164 c can be varied. A word line 178 c extends belowa field oxide region and is formed extending laterally to other memorycells, and is placed in electrical connection with gate 170 of thesurround gate transistor.

[0365] A circular channel is located between center source/drain region164 b and outer source/drain region 164 c. The circular channel ispreferably lightly doped with a dopant type opposite the dopant type ofcenter source/drain region 164 b and outer source/drain region 164 c.The doping of the circular channel is preferably conducted in a priordoping operation to that of silicon substrate 164.

[0366] A plan view of the MOS surround-gate transistor is shown in FIG.40 wherein continuous free-standing wall 170 forms the gate region ofthe MOS surround-gate transistor. At either side of annular sidewall 170is one of sidewall spacers 170 c. In silicon substrate 164 withincircular chamber 170 b is shown center source/drain region 164 b. Alsoin silicon substrate 164, and exterior to continuous free-standing wall170 and the outer of sidewall spacers 170 c, there is shown outersource/drain region 164 c. LOCOS spacer regions 164 a, not seen in FIG.40, are located on silicon substrate 164 at the exterior of outersource/drain region 164 c. From the view provided by FIG. 40, it can beseen that the MOS surround-gate transistor formed by the eighth methodhas a narrow width of the circular channel between center source/drainregion 164 b and outer source/drain region 164 c.

[0367] The MOS surround-gate transistor can be formed with a circularchannel length of less than a quarter micron. The channel length isdetermined by the thickness of annular sidewall 170, which in turn isdetermined by the angle and energy of the implanted ions, as describedabove for the sixth and seventh methods. Thus, under the eighth method,a MOS surround-gate transistor is provided with a channel length of lessthan about 0.5 microns. Preferably, the channel length is between about0.125 and 0.25 microns, and most preferably, the channel length is about0.25 microns.

[0368]FIG. 41 depicts a manner of completing a MOS DRAM memory cellbased on the surround-gate transistor of the present invention. As shownin FIG. 41, a contact 174 a is formed extending up from centersource/drain region 164 b at the interior of annular sidewall 170. In sodoing, a lower insulating layer 176 a is first formed of an insulatingmaterial such as BPSG, after which a contact opening is etched andfilled with a conducting material such as aluminum. Contact 174 a is, inthe depicted embodiment, used for making contact with a capacitorstorage node 174 b, which is thereafter formed over lower insulatinglayer 176 a in electrical contact with contact 174 a.

[0369] After forming storage node 174 b, a capacitor dielectric 174 c isformed over the top thereof. An upper capacitor plate 174 d is thenformed over capacitor dielectric 174 c to complete a capacitor 174. Inthe depicted embodiment, both of capacitor storage node 174 b and upperplate 174 d are formed of polysilicon. Capacitor 174 and contact 174 aconnecting thereto can be formed at the center of the opening betweenLOCOS spacer regions 164 a. The arrangement allows the memory cell to behighly compact, while also allowing capacitor 174 to be spaced apartfrom LOCOS spacer regions 164 a. This spacing is advantageous in thatconventional capacitors must generally be formed in close proximity toLOCOS spacer regions, causing charge leakage through stress cracks inLOCOS spacer regions. Spacing conventional capacitors apart from LOCOSspacer regions will take up more space on the silicon substrate, thusfrustrating miniaturization efforts. Accordingly, the placement ofcapacitor 174 results in a reduced amount of charge leakage compared toconventional memory cells and promotes greater miniaturization of theintegrated circuit being formed.

[0370] In completing the DRAM memory cell, an upper insulating layer 176b is formed over lower insulating layer 176 a and capacitor top plate174 d. A bit line contact 178 a is formed through upper insulating layer176 b and lower insulating layer 176 a extending down to outersource/drain region 164 c.

[0371] The MOS surround-gate transistor described above occupies aminimum of space on the silicon substrate and is formed in a morestreamlined manner than surround-gate transistors of the prior art dueto the use of the etching process which is selective to implantedsilicon-containing material in forming a continuous free-standingannular sidewall. The MOS surround-gate transistor can be formed with achannel of less than a quarter micron. The MOS surround-gate transistoris also easily incorporated into a DRAM memory cell which is compact andexhibits minimal charge leakage.

[0372] 9. Formation of a Stacked Capacitor Storage Node with the EtchingProcess which is Selective to Implanted Silicon-containing Material

[0373] FIGS. 42-45 illustrate a ninth method of the present invention,in which a stacked capacitor storage node is created within a smallsurface area and in a self-aligned manner using the etching processwhich is selective to implanted silicon-containing material of thepresent invention.

[0374] As illustrated in FIG. 42, conventional process flow is initiallyfollowed under the ninth method until gate regions are formed. As shown,a semiconductor substrate is provided in the form of a semiconductorwafer 180. Semiconductor wafer 180 is formed with a silicon substrate190 thereon, upon which is formed active regions 180 a adjoined by gateregions 182. A dielectric layer such as a TEOS layer 182 a is formedover active regions 180 a and gate regions 182. A polysilicon layer 184is deposited over TEOS layer 182 a. Polysilicon layer 184 is formed ofintrinsic polysilicon as described above, and could comprise HSGpolysilicon. Above polysilicon layer 184 is formed a hard mask layer,such as a silicon nitride hard mask layer 186. The hard mask layerserves as both a hard mask for an ion implantation process and as anetch barrier for a subsequently conducted height reduction process.Silicon dioxide is also a suitable material for forming the hard masklayer.

[0375]FIG. 43 illustrates further processing of the ninth method,wherein silicon nitride hard mask layer 186 is patterned with circularopenings in each location wherein a stacked capacitor storage node is tobe formed. Once silicon nitride hard mask 186 is patterned, an isotropicetching process is conducted to create a conical opening 188 inpolysilicon layer 184 extending down to active region 180 a in siliconsubstrate 190. Due to its sloped profile, conical opening 188 contactssilicon substrate 190 with a small surface area. This small surface areaallows conical opening 188 to be provided with a broad latitude of spacefor landing upon one of active regions 180 a. Consequently, activeregions 180 a can also be formed more compactly, thus allowing forgreater miniaturization of the resulting integrated circuit.

[0376] As shown in FIG. 44, after conical opening 188 is constructed, asecond polysilicon layer 192 is deposited over silicon nitride hard masklayer 186 and over conical opening 188 in order to make electricalcontact with active region 180 a. An ion implantation process,represented by arrows in FIG. 44, is then conducted to implant ions intothe portion of second polysilicon layer 192 that is located withinconical opening 188. The ions can be implanted at an angle orthogonal tosemiconductor wafer 180, or can be implanted in multiple implantationstages in the manner discussed above for the first method, and byvarying the angle of implantation or other parameters between thedifferent implantation stages. The ions are implanted with apredetermined depth achieved by the proper selection of the ionimplantation parameters. The predetermined depth in turn determines thethickness of a sidewall of the stacked capacitor storage node that is tobe formed.

[0377] An uppermost surface of second polysilicon layer 192 whichoverlies silicon nitride hard mask 186 is then removed by a heightreduction process such as chemical-mechanical planarization (CMP).Silicon nitride hard mask layer 186 is thereafter removed by an etchingprocess which is selective to polysilicon, or by a height reductionprocess such as CMP. Other ion implantation parameters can also beappropriately selected, as described above for the first method, inorder to tailor the ion concentration profile formed by the implantedions.

[0378] Once the ion implantation operation is conducted, the etchingprocess is conducted which is selective to implanted silicon-containingmaterial of the present invention. The etching process is conductedsubstantially in the same manner as described above for the firstmethod. Consequently, the unimplanted polysilicon of first polysiliconlayer 184 is removed, leaving conical structures 194 seen in FIG. 45.Conical structures 194 are free-standing and preferably have an aspectratio greater than about 2 to 1. As such, conical structures 194 can bedesigned to have a relatively small surface area contact to activeregion 180 a, and are suitable for use as stacked capacitor storagenodes. HSG or CSG polysilicon may also be deposited on the surface ofconical structures 194 so as to increase the surface area thereof.

[0379] The ninth method is advantageous in that it eliminates a maskingstep of prior art stacked capacitor storage node formation processes.The stacked capacitor storage node formation process is therebysimplified, yield is increased, and the throughput of the integratedcircuit fabrication process is also increased. The resulting stackedcapacitor storage node is self-aligned, further increasing yield, andfurther facilitating greater miniaturization of the integrated circuitbeing manufactured.

[0380] 10. Formation of a Polysilicon Plug with the Etching Processwhich is Selective to Unimplanted Silicon-containing Material

[0381] A tenth method of the present invention, illustrated in FIGS.46-49, uses the etching process which is selective to unimplantedsilicon-containing material of the second method to form a polysiliconplug. As shown in FIG. 46, the tenth method initially involves providinga semiconductor substrate. In the depicted embodiment, the semiconductorsubstrate is a semiconductor wafer 196 which has provided thereon asilicon substrate 198. A plurality of gate regions 198 a and adjacentactive regions 198 b are formed on the semiconductor substrate, and alayer of silicon-containing material, which in the depicted embodimentis a polysilicon layer 200, is formed over gate regions 198 a and overactive regions 198 b. In subsequent processing of the tenth method, amasking substrate, in one embodiment a photoresist mask 202, is appliedover polysilicon layer 200 and is patterned with an island located overactive regions 198 b as shown in FIG. 47. Polysilicon layer 200 is thusfunctionally divided into a first portion 204 that is covered withphotoresist mask 202, and a second portion 206 that is unmasked.

[0382] As shown in FIG. 48, an anisotropic etching process issubsequently conducted to partially reduce the height of second portion206 of polysilicon layer 200. Once the height of second portion 206 hasbeen partially reduced, ions are first implanted into the remainder ofsecond portion 206 in the manner discussed above for the second method.The ions are of a selected type chosen in accordance with an etchingprocess which is selective to unimplanted silicon-containing material,as discussed above for the second method. Arsenic ions are preferredbecause they tend to diffuse more slowly than do other ions such asphosphorous ions. Photoresist mask 202 is then removed to expose firstportion 204 which is relatively unimplanted and second portion 206 whichis heavily implanted.

[0383] In a further procedure of the tenth method, and in order toremove the remainder of second portion 206, an etching process isconducted which is selective to unimplanted silicon-containing materialsubstantially as discussed above in the description of the secondmethod. Consequently, second portion 206, which was implanted with ions,is removed, and first portion 204, which was covered with photoresistmask 202 and consequently is relatively unimplanted, is left remaining.The structure seen in FIG. 49 results, wherein polysilicon plugs 208have been formed.

[0384] The tenth method involves fewer processing steps thanconventional polysilicon plug formation processes. It also avoidsplanarization and structural stresses that are caused by planarization,thereby increasing integrated circuit manufacturing process yield. Amasking and dry etching operation of conventional interconnect structureopening formation is also eliminated, together with the problemsdiscussed above that are attendant thereto.

[0385] 11. Formation of a Self-aligned Interconnect Structure using Stopon Nitride Planarization and the Etching Process which is Selective toImplanted Silicon-containing Material

[0386] An eleventh method of the present invention is illustrated inFIGS. 50 through 53. The eleventh method uses an etching process whichis selective to implanted silicon-containing material together with aplanarization process to form a self-aligned interconnect structure.

[0387] A starting structure for the eleventh method is shown in FIG. 50where a semiconductor substrate is provided in the form of asemiconductor wafer 210. Semiconductor wafer 210 is comprised of asilicon substrate 212 upon which is provided a plurality of chargeconducting regions, which in the depicted embodiment have the form ofactive regions 212 a, 212 b, and 212 c. The charge conducting regionscould also be, for example, the tops of contacts that extend down tosemiconductor device features (not shown) located lower on thesemiconductor substrate. Also provided on silicon substrate 212,adjacent active regions 212 a through 212 c are gate regions 214. Eachof gate regions 214 has provided on the top thereof a silicon nitridecap 216.

[0388] Located over active regions 212 a through 212 c and gate regions214 is a volume of silicon-containing material. In the depictedembodiment, the volume of silicon-containing material comprises apolysilicon layer 218. Polysilicon layer 218 is formed over at least oneof active regions 212 a, 212 b, and 212 c, and over silicon nitride caps216. A cleaning process may be conducted on the surface of semiconductorwafer 210 prior to depositing polysilicon layer 218 in order to removeundesirable native oxides that may be present.

[0389] As shown in FIG. 51, polysilicon layer 218 is subsequentlyreduced in height. The height is reduced preferably by a planarizationprocess, and more preferably is achieved with a CMP process. The heightreduction is preferably conducted selective to silicon nitride in orderto reduce the height of polysilicon layer 218 down to the top of siliconnitride caps 216. Silicon nitride caps 216 are thus used as an etchbarrier for stopping the height reduction operation. A further briefpolysilicon etching process may be needed to fully clear polysiliconlayer 218 from the tops of silicon nitride caps 216. A heat treatmentprocess can also be conducted, before or after planarization, to cureseams that may form in polysilicon layer 218 due to the underlyingtopography.

[0390] As shown in FIG. 52, after planarizing polysilicon layer 218,polysilicon layer 218 is covered with a masking substrate. In thedepicted embodiment, the masking substrate is a silicon nitride hardmask 222, though, as discussed above, any layer that is an effectivebarrier to implanted ions can be used. Silicon nitride hard mask 222exposes one or more selected segments of polysilicon layer 218 thatoverlie and contact active regions 212 a and 212 b and that are intendedto form interconnect structures. Other portions of polysilicon layer 218that are intended to be removed are covered by silicon nitride hard mask222. Ion implantation can then be conducted in multiple implantationstages with the ion implantation parameters varied between theimplantation stages, and could be conducted with a combination of dopantions and inert ions as described above for the first method.

[0391] In order to properly locate silicon nitride hard mask 222 overthe selected segments of polysilicon layer 218 that overlie and contactactive regions 212 a and 212 b, the present invention provides forself-alignment of silicon nitride hard mask 222. In so doing, siliconnitride hard mask 222 is patterned with an opening 222 a of a greaterwidth than the selected segments of polysilicon layer 218 that overlieactive regions 212 a and 212 b. The periphery or edges of opening 222 aare situated on the tops of two of gate regions 214. The two gateregions 214 are preferably located in contact with selected segments 220a and 220 b of polysilicon layer 218 that overlie active regions 212 aand 212 b, respectively.

[0392] Self-alignment occurs due to silicon nitride spacers 214 whichact as barriers to ions which are to be implanted into unmasked portionsof polysilicon layer 218 in a further stage of the eleventh method.Consequently, a slight misalignment of opening 222 a will relocate theedges of opening 222 a along the tops of silicon nitride caps 216. Aslong as the misalignment of opening 222 a is not greater than the amountof overlap of opening 222 a over gate regions 214, the ions will beconfined to the selected segments of polysilicon layer 218 that overlieactive regions 212 a and 212 b and to the tops of selected gate regions214 adjoining active regions 212 a and 212 b. If an interconnectstructure is intended to be constructed over active region 212 c,opening 222 a will be formed to also expose the segment of polysiliconlayer 218 that is located over active region 212 c.

[0393] As depicted in FIG. 52, ions of a selected type are subsequentlyimplanted into the unmasked portions 220 a and 220 b of polysiliconlayer 218. The implantation of ions is represented by downward pointingarrows 224. The type of ions to be implanted is selected, as discussedabove for the first method, in conjunction with an etching process whichis selective to implanted silicon-containing material. In oneembodiment, phosphorus ions are implanted. Also, as discussed above, theshape of the selected segment that is implanted with ions can betailored by varying the implant parameters and by conducting the ionimplantation operation in multiple stages, as described above for thefirst and second methods. The ion implantation operation implants ionsinto the selected segments 220 a and 220 b of polysilicon layer 218located above active regions 212 a and 212 b, respectively. Theremainder of polysilicon layer 218, at 220 c for example, is relativelyunimplanted. The relatively unimplanted portion of polysilicon layer 218corresponds to the portion of polysilicon layer 218 that is to beremoved, and the selected segments, 220 a and 220 b, correspond to theportion of polysilicon layer 218 which are to remain. Silicon nitridehard mask 222 is removed after concluding the ion implantationoperation.

[0394] As shown in FIG. 53, polysilicon layer 218 is subsequently etchedwith the etching process which is selective to implantedsilicon-containing material substantially as described in the discussionabove of the first method. The etching process parameters can beappropriately selected as also described above, to further tailor theinterconnect structures being formed. The etching process which isselective to implanted silicon-containing material results in patternedinterconnect structures, shown in the depicted embodiment in the form ofpolysilicon plugs 226 a and 226 b. Polysilicon plugs 226 a, 226 b areformed from the selected segments of polysilicon layer 218 that overlieand contact active regions 212 a and 212 b and which were implanted inthe ion implantation operation.

[0395] In the depicted embodiment, the segment of polysilicon layer 218located above active region 212 c which was masked by silicon nitridehard mask 222, and consequently was not implanted with ions, is removedto form an open area 228 therein. Open area 228 can be left open andlater filled with insulating material, or can be filled with aconductive material at a later stage in the process flow.

[0396] The eleventh method simplifies the polysilicon interconnectstructure formation process by eliminating several steps of theconventional process discussed above. The need for a dry etching processis eliminated, as no interconnect structure opening need be formed.Also, the insulating layer need not be deposited until a later stage inthe process flow and can be formed concurrently with intermetaldielectric layer formation, thereby eliminating insulating materialdeposition and reflow steps. The simplified process increases integratedcircuit manufacturing process throughput and reduces cost. A higheryield of the integrated circuit manufacturing process is also seen dueto reduced opportunities for yield reducing errors to occur in thesimplified process. Also, the etching process which is selective toimplanted silicon-containing material has greater etching uniformitythan the dry etching process of the prior art, thus further improvingyield.

[0397] 12. Formation of a High Aspect Ratio Interconnect StructureOpening using a Sacrificial Interconnect Structure and the EtchingProcess which is Selective to Implanted Silicon-containing Material

[0398] A twelfth method of the present invention is illustrated in FIGS.54 through 59. Under the twelfth method, a self-aligned interconnectstructure opening is etched using a sacrificial interconnect structure.

[0399]FIG. 54 illustrates an initial structure of the twelfth method.The twelfth method essentially incorporates the eleventh method up untilthe stage wherein a polysilicon plug is constructed. In the twelfthmethod, however, a thin insulating layer is preferably formed prior todepositing a polysilicon layer. Thus, in the depicted embodiment, chargeconducting regions in the form of active regions 232 a and 232 b areformed on a semiconductor substrate comprising a silicon substrate 232on a semiconductor wafer 230. A thin insulating layer is formed over atleast one charge conducting region, down to which the self-alignedinterconnect structure opening is intended to extend. In the depictedembodiment, a thin oxide layer 234 is formed over silicon substrate 232,and the charge conducting regions comprise active regions 232 a and 232b. An oxide layer 234 could be a grown or re-grown oxide, or could be anoxide layer remaining from active region formation or gate regionformation.

[0400] Also, as in the eleventh method, a plurality of raised insulatingsurfaces are formed on silicon substrate 232 leaving interveningopenings located over the charge conducting regions. In the depictedembodiment, the plurality of raised insulating surfaces comprise a trioof gate regions 236, each of which is located adjacent one of activeregions 232 a and 232 b. Gate regions 236 are each covered with one ofsilicon nitride caps 238, and are encased in silicon nitride spacers240. A volume of silicon-containing material is formed over activeregions 232 a and 232 b as well as over gate regions 236, filling in theintervening openings over active regions 232 a and 232 b. In thedepicted embodiment, the volume of silicon-containing material is apolysilicon layer 242.

[0401] The height of polysilicon layer 242, as shown in FIG. 55, isreduced down to the tops of the plurality of insulating surfaces. Asdiscussed for the eleventh method, the height reduction is in oneembodiment accomplished with a planarization process, and preferablywith a CMP process that stops on silicon nitride caps 238.

[0402]FIG. 56 shows subsequent steps of the twelfth method, whereinpolysilicon layer 242 is covered with a masking substrate. In thedepicted embodiment, the masking substrate comprises a silicon nitridehard mask 244, though, as discussed in the first method above, silicondioxide, silicon nitride or any other material that is substantiallyimpermeable to ion implantation can be used. Photoresist mask 244 ispatterned to expose selected segments of polysilicon layer 242 overlyingactive regions 232 a and 232 b that are intended to form interconnectstructures. Other portions of polysilicon layer 242 that are intended tobe removed are covered by photoresist mask 244.

[0403] As shown in FIG. 56, ions are subsequently implanted into theunmasked portions of polysilicon layer 242. The ion implantationoperation is represented in FIG. 56 by arrows 246. The ions are of aselected type chosen, as discussed above, in conjunction with an etchingprocess which is selective to implanted silicon-containing material thatis to be conducted at a further stage in the twelfth method. In oneembodiment, phosphorus ions are implanted. Since one or both ofimplanted portions 250 a and 250 b are intended to be latersacrificially etched, there is a flexibility in the selected type ofions that can be implanted, as the sacrificial polysilicon plugs formedthereby are not required to be doped in any specific manner.Accordingly, any suitable type of ions, as discussed above for the firstmethod, can be implanted. In one embodiment, the implanted ions aresilicon ions. The ion implantation operation creates heavily implantedportions 250 a and 250 b in polysilicon layer 242 below opening 222 a,and creates relatively unimplanted portions 248 below silicon nitridehard mask 244.

[0404] Also, as discussed above, the shape of heavily implanted portions250 a and 250 b can be tailored by appropriate selection of the ionimplantation parameters as described above for the first and secondmethods. Ion implantation can be conducted in multiple stages withparameters varied between the stages, and can be conducted with acombination of dopant ions and inert ions as described for the firstmethod above.

[0405] In subsequent processing illustrated in FIG. 57, polysiliconlayer 218 is etched with the etching process which is selective toimplanted silicon-containing material as described for the firstembodiment above. The etching process is conducted substantially asdescribed for the first method above, with etching parameters that canbe appropriately selected to further tailor the profile of thepolysilicon interconnect structures being formed. Sacrificialinterconnect structures result from the etching process in the form ofpolysilicon plugs 250 a and 250 b. Either of polysilicon plugs 250 a and250 b can be used as a sacrificial “dummy” plug to be etched away in theprocess of forming an extended depth self-aligned interconnect structureopening.

[0406] In order to create an extended depth self-aligned interconnectstructure opening, a blanket layer of insulating material is formed overpolysilicon plugs 250 a and 250 b as shown in FIG. 58. In the depictedembodiment, the blanket layer of insulating material comprises aborophosphosilicate glass (BPSG) layer 252 that is deposited andreflowed. -BPSG layer 252 is preferably planarized to provide a smoothsurface, and has a thickness selected in accordance with a desired depthof the extended depth self-aligned interconnect structure opening.

[0407] After forming BPSG layer 252, two separate interconnect structureopening etching procedures are used to form an extended depthinterconnect structure opening extending down through BPSG layer 252 topolysilicon plug 250 a. A first interconnect structure opening etchingprocedure is represented in FIG. 58. As shown therein, a conventionalphotolithography process is used to form a photoresist mask 254 havingan opening above polysilicon plug 250 a. An etch chemistry thatpreferably etches BPSG selective to silicon-containing material is thenused to etch an interconnect structure opening upper portion 256 intoBPSG layer 252. In one embodiment, a dry etching process is initiallyused to open BPSG layer 252 and is followed by an overetch to remove anyremaining BPSG over polysilicon plug 250 a. Interconnect structureopening upper portion 256 is preferably formed with a somewhat largercircumference than polysilicon plug 250 a, and a dry etching process isselected that does not etch silicon nitride caps 238 of gate regions236. Accordingly, interconnect structure opening upper portion 256 isself-aligned to gate regions 236. A second interconnect structureopening etching procedure is subsequently used to remove polysiliconplug 250 a. The second interconnect structure opening etching procedurepreferably etches silicon-containing material selective to siliconnitride and BPSG. One example of a suitable etching chemistry for sodoing is a TMAH wet etch. The TMAH wet etch is conducted in a mannersimilar to that described in the first method above. The TMAH wet etchetches polysilicon which been implanted with ions somewhat slowly, butetches photoresist, silicon nitride, and silicon oxide even slower,thereby allowing polysilicon plug 250 a to be etched selective to gateregions 236 and to underlying oxide layer 234. The second interconnectstructure opening etching procedure thus removes polysilicon plug 250 ato form a self-aligned interconnect structure opening lower portion 256a shown in FIG. 59. Together, interconnect structure opening upperportion 256 and self-aligned interconnect structure opening lowerportion 256 a form an extended depth self-aligned interconnect structureopening 258 that passes through BPSG layer 252 down to expose a surfaceon active region 232. The extended depth interconnect structure openingis formed with a high aspect ratio, preferably at least about 2 to 1.

[0408] A conductive material such as aluminum can be deposited into theextended depth interconnect structure opening to form an interconnectstructure. The interconnect structure may also be formed with arefractory metal silicide lining which can cover the entire sidewall ofthe extended depth interconnect structure opening. An alternatestructure for which the extended depth interconnect structure opening isespecially useful is an integral stacked capacitor storage node andbase. The integral stacked capacitor storage node and base can beintegrally formed with a single material deposition and patterningprocess after the formation of the extended depth interconnect structureopening.

[0409] The twelfth method forms an extended depth self-alignedinterconnect structure opening having the advantages discussed aboveinvolving the etching process which is selective to implantedsilicon-containing material of the present invention. These advantagesinclude a simplification of the process flow by eliminating a dryetching process by the use of a “dummy” polysilicon plug. Integratedcircuit manufacturing cost is thereby decreased, and yield is increased.In addition, the extended depth self-aligned interconnect structureopening is formed efficiently with a high aspect ratio. The extendeddepth self-aligned interconnect structure opening can be used to form anintegral stacked capacitor storage node and base that provides highercell capacitance compared with stacked capacitors formed with a separatestorage node and interconnect structure serving as the base of thestacked capacitor.

[0410] 13. Formation of a Container Capacitor Cell using an In-situDeposition with the Etching Process which is Selective to ImplantedSilicon-containing Material

[0411] A thirteenth method of the present invention is illustrated inFIGS. 60 through 64. Under the thirteenth method, a storage node of astacked capacitor is formed that provides a large surface area of thestacked capacitor and that occupies a minimum of surface area on asemiconductor substrate.

[0412]FIG. 60 illustrates an initial structure for use in the thirteenthmethod. The structure of FIG. 60 can be arrived at by following theeleventh method or equivalents thereof. Conventional methods can also befollowed in obtaining the structure of FIG. 60. In the depictedembodiment, a semiconductor wafer 260 has thereon a silicon substrate262. Portions of silicon substrate 262 are doped to form active regions264 as are typically employed as source/drain regions of MOStransistors. A pair of gate regions 266 are, in the depicted embodiment,formed on silicon substrate 262 adjacent active regions 264, and areencapsulated in insulating material. The insulating material includessilicon nitride caps 266 a on the tops of gate regions 266. A lowerinsulating layer 268 is formed over gate regions 266 and is planarizeddown to the level of the tops of silicon nitride caps 266 a. Apolysilicon plug 270 is formed in lower insulating layer 268, and in thedepicted embodiment is located between two of gate regions 266.

[0413] Once lower insulating layer 268 is planarized and polysiliconplug 270 is formed, an upper insulating layer 272 is deposited overlower insulating layer 268. After forming upper insulating layer 272, anopening 274 is formed in upper insulating layer 272. Opening 274partially overlaps gate regions 266 and exposes the top of polysiliconplug 270. The periphery or edges of opening 274 are situated on the topsof silicon nitride caps 266 a, providing for self-alignment of opening274 in the manner described for the twelfth method. Opening 274 ispreferably circular in cross-section, with a horizontal bottom andvertical sidewalls. Opening 274 can also be formed over chargeconducting regions other than polysilicon plug 270 and active regions264.

[0414]FIG. 61 depicts further processing in accordance with thethirteenth method. As shown in FIG. 61, a layer of silicon containingmaterial such as a lower polysilicon layer 276 is formed in opening 274.Lower silicon-containing layer 276 is formed with a horizontallyextending bottom section 276 a contacting polysilicon plug 270 in thebottom of opening 274. A side section 276 b is formed extendingsubstantially vertically upward from the terminal ends of bottom section276 a and contacts the sidewalls of opening 274. As opening 274 ispreferably a continuous circular opening, side section 276 b is alsopreferably continuous and circular.

[0415] An intermediate layer of silicon-containing material, such as apolysilicon layer 278, is subsequently formed above and immediatelyadjacent lower polysilicon layer 276 in opening 274. A horizontallyextending bottom section 278 a of intermediate polysilicon layer 278 isformed above and immediately adjacent bottom section 276 a, and asubstantially vertically extending side section 278 b is formedimmediately adjacent side section 276 b extending upward from theterminal ends of bottom section 278 a.

[0416] A layer of silicon-containing material, such as an upperpolysilicon layer 280, is thereafter formed above and immediatelyadjacent intermediate polysilicon layer 278 in opening 274. Ahorizontally extending bottom section 280 a of upper polysilicon layer280 is formed above and immediately adjacent bottom section 278 a, and asubstantially vertically extending side section 280 b thereof is formedimmediately adjacent side section 278 b extending upward from theterminal ends of bottom section 278 a.

[0417] Lower polysilicon layer 276 and upper polysilicon layer 280 arepreferably heavily doped with impurities in order to cause lowerpolysilicon layer 276 and upper polysilicon layer 280 to be etched at asubstantially lower rate than silicon-containing material that is notdoped when using an etching process which is selective to implantedsilicon-containing material as described for the first method above. Theimpurities can be of the same type as the ions that are implanted in thefirst method and can be implanted or intrinsically doped duringdeposition.

[0418] As can be seen in FIG. 61, each of lower polysilicon layer 276,intermediate polysilicon layer 278, and upper polysilicon layer 280 arepreferably deposited as blanket layers over the surface of siliconsubstrate 262. Consequently, a portion of each of lower polysiliconlayer 276, intermediate polysilicon layer 278, and upper polysiliconlayers 280 is also formed extending parallel to the surface of upperinsulating layer 272.

[0419]FIG. 62 illustrates further processing according to the thirteenthmethod. As shown in FIG. 62, once lower polysilicon layer 276,intermediate polysilicon layer 278, and upper polysilicon layer 280 areformed, ions of a selected type, represented by arrows 282, areimplanted into opening 274. The selected type of ions to be implanted isdetermined in accordance with the etching process which is selective toimplanted silicon-containing material as discussed in the description ofthe first embodiment above. The ions of the ion implantation operationare preferably implanted in a direction orthogonal to the plane ofsemiconductor wafer 260. An implantation energy range is used that issufficient to implant the ions through bottom section 280 a and into theportion of bottom section 278 a of intermediate polysilicon layer 278that is not covered by sidewall sections 280 b of upper polysiliconlayer 280. Implanted regions 284 and 286 are formed in bottom sections278 a and 280 a. Implanted regions 284 and 286 have smaller horizontalareas than that of bottom sections 278 a and 280 a, respectively.

[0420] After the ion implantation operation is conducted, portions oflower polysilicon layer 276, intermediate polysilicon layer 278, andupper polysilicon layer 280 which are located above the uppermostsurface of upper insulating layer 272 and which extend above the top ofopening 274 are removed with a height reduction process. The heightreduction process is preferably conducted in the form of planarization,and more preferably in the form of CMP operation that stops on oxide.

[0421] Further processing in the thirteenth method is shown in FIG. 63.An etching process which is selective to implanted silicon-containingmaterial is conducted. The etching process is conducted in substantiallythe same manner as is described for the first method above. Becauseportions of lower polysilicon layer 276 and upper polysilicon layer 280are doped with impurities that cause the etching process which isselective to implanted silicon-containing material to etch slowly, suchportions of lower polysilicon layer 276 and upper polysilicon layer 280are not substantially etched by the selective etching process. Implantedregions 284 and 286 is also not etched, while the portions ofintermediate polysilicon layer 278 that were not implanted aresubstantially removed by the etching process which is selective toimplanted silicon-containing material. In further processing, upperinsulating layer 272 is removed with a still further etching processthat is selective to polysilicon.

[0422] From the foregoing, a structure results that is suitable for useas a stacked capacitor storage node. FIG. 64 depicts one such stackedcapacitor storage node 288 that comprises lower polysilicon layer 276which in turn is formed with a horizontally extending bottom section 276a and a substantially vertically extending side section 276 b extendingupward from bottom section 276 a. Intermediate polysilicon layer 278 nowhas a horizontally extending bottom section 278 c that is reduced insurface area and which is situated above and immediately adjacent bottomsection 276 a of lower polysilicon layer 276. Upper polysilicon layer280 is situated above and immediately adjacent reduced bottom section278 c of intermediate polysilicon layer 278 and has a horizontallyextending bottom section 280 a and a substantially vertically extendingside section 280 b extending upward therefrom. Bottom section 280 a ofupper polysilicon layer 280 and bottom section 276 a of lowerpolysilicon layer 276 are of a larger surface area than reduced bottomsection 278 c of intermediate polysilicon layer 278, allowing an openarea 294 to be formed between side section 276 b and side section 280 bthat also extends partially between bottom section 276 a and bottomsection 280 a.

[0423] The structure of FIG. 64 is advantageous in that it provides alarge surface area in a limited horizontal space on silicon substrate262. The surface area of the structure of FIG. 64 is greater than thatwhich can be formed by conventional methods, due to the reduction insurface area of intermediate polysilicon layer 278 provided by thethirteenth method.

[0424] In completing a stacked capacitor using stacked capacitor storagenode 288, and as shown in FIG. 64, a thin dielectric layer 290 is formedover the exposed surface of storage node 288. Thereafter, an uppercapacitor plate 292 is formed thereon. Upper capacity plate 292 istypically formed by depositing a blanket polysilicon layer over the topof thin dielectric layer 290. Upper capacitor plate 292 can also beformed of materials other than polysilicon.

[0425] A stacked capacitor storage node is formed under the thirteenthmethod with a large surface area and thereby a high charge retention ofthe stacked capacitor formed therefrom. Miniaturization of the resultingintegrated circuit is furthered, as the stacked capacitor node occupiesan appreciably smaller space on the semiconductor substrate. The stackedcapacitor is also formed in a simple and efficient manner, therebyproviding a high yield and a low cost of the integrated circuitmanufacturing process.

[0426] 14. Formation of a Stacked Capacitor Storage Node having aSidewall Thickness Determined by an Ion Implantation Angle

[0427] A fourteenth method of the present invention is illustrated inFIGS. 65 through 68. Under the fourteenth method, a storage node of astacked capacitor is formed. The storage node is formed in a mannerwhich provides a large surface area and a consequent high chargeretention, while consuming minimal space on a semiconductor substrate onwhich it is formed. The fourteenth method provides flexibility as to thethickness with which a free-standing wall of the storage node is formed,and the free-standing wall can be formed with sub-photolithographyresolution dimensions.

[0428]FIG. 65 illustrates a starting structure of the fourteenth methodin which a semiconductor substrate is provided. In the depictedembodiment, the semiconductor substrate has the form of a semiconductorwafer 300 having situated thereon a silicon substrate 310. A pluralityof active regions 312 are formed in silicon substrate 310, one of whichis adjacent to a pair of gate regions 314. A silicon nitride cap 314 ais formed on each of gate regions 314.

[0429] In a further procedure of the fourteenth method, an insulatinglayer is formed over silicon substrate 310 and gate regions 314. Theinsulating layer, in the depicted embodiment, comprises a BPSG layer316. A planarization process is thereafter conducted to form a planarsurface on BPSG layer 316. The planarization process preferablycomprises CMP. The height to which BPSG layer 316 is formed andplanarized corresponds to the height of the free-standing storage nodeformed by the fourteenth method and is selected accordingly.

[0430] After forming and planarizing BPSG layer 316, an opening 318 isformed in BPSG layer 316. In the depicted embodiment, opening 318 isformed over gate regions 314 and extends down to an active region 312situated between gate regions 314. Opening 318 is self-aligned to activeregion 312 by forming opening 318 partially overlapping silicon nitridecaps 314 a of gate regions 314. Of course, charge conducting regionsother than an active region could be located beneath opening 318, andopening 318 could be located elsewhere on a semiconductor substrate asneeded. For instance, opening 318 could be connected with a polysiliconplug, which in turn extends down to an underlying charge conductingregion 312 or to some other semiconductor device, as needed for theparticular application.

[0431] After forming opening 318, a polysilicon layer 320 is formed inopening 318, partially filling opening 318. Polysilicon layer 320preferably is deposited as a blanket layer and is formed of intrinsicpolysilicon in the manner discussed for the first method. The thicknessof polysilicon layer 320 will determine the amount of open space thatwill be formed between the free-standing storage node sidewalls and theperiphery or edge of opening 318. Generally, a greater thickness ofpolysilicon layer 320 will result in a greater amount of open space.

[0432] Further processing of the fourteenth method is depicted in FIG.66. As shown therein, ions, represented by arrows 322, are implantedinto polysilicon layer 320. The ion implantation operation is conductedin the manner discussed above for the first embodiment, and the type ofions which are implanted is selected as discussed therein, in accordancewith an etching process which is selective to implantedsilicon-containing material. The ions are implanted with an angle ofimplantation and an implantation energy selected to result in a desiredthickness of a free-standing wall of the resulting storage node. Forinstance, changes in implantation angle or a implantation energy willresult in different portions of polysilicon layer 320 being implanted,and different thickness of the resulting free-standing wall for thestorage node. Ion implantation creates an implanted portion 326 and arelatively unimplanted portion 324 of polysilicon layer 320. In thedepicted embodiment, implanted portion 326 forms an inner ring aroundthe inside of opening 318, and relatively unimplanted portion 324 formsan outer ring around implanted portion 326.

[0433] As shown in FIG. 67, after the ion implantation operation isconducted, a volume of material, such as photoresist plug 328, isapplied and patterned to fill opening 318 in preparation for conductinga planarization process. Photoresist plug 328 preserves the interior ofopening 318 from damage during planarization and is preferably depositedusing conventional methods. Once photoresist plug 328 is in place, aplanarization process such as CMP is conducted to remove portions ofpolysilicon layer 320 that extend above the surface of BPSG layer 316.Photoresist plug 328 is thereafter removed.

[0434] As shown in FIG. 68, once planarization is conducted, an etchingprocess which is selective to implanted silicon-containing material asdiscussed in the first method is conducted. As a result, relativelyunimplanted portion 324 is removed, and implanted portion 326 is leftremaining to form a free-standing wall 332 a. Free-standing wall 332 adoes not physically contact the edge of opening 318 and is separatedfrom the edge of opening 318 by a predetermined width of open space 330.A dielectric layer and an upper capacitor plate can be deposited in openspace 330 without having to remove or re-deposit BPSG layer 316. Thus,free-standing wall 332 a is suitable for use as a storage node for astacked capacitor.

[0435] The surface of the stacked capacitor storage node is, under thefourteenth method, roughened in order to increase the surface areathereof. The inner surface of the stacked capacitor storage node can beroughened after removal of photoresist plug 328, while either of boththe inner and outer surfaces of polysilicon layer 320 can be roughenedafter formation of open space 330. Roughening the surface of polysiliconlayer 320 results to in a greater surface area per square centimeterthan a non-roughened surface, thereby increasing charge retention of thecompleted capacitor. The roughened surface is preferably obtained bydepositing a layer of hemispherical grain (HSG) polysilicon orcylindrical grain polysilicon (CSG) on the surface of polysilicon layer320. The HSG polysilicon or CSG polysilicon layer is preferablydeposited selectively with CVD in a manner known in the art. Summarily,this comprises depositing a thin undoped or lightly doped layer ofamorphous silicon over polysilicon layer 20 and subsequently applying ahigh pressure and temperature. The high pressure and temperature resultin a nucleation of the amorphous silicon layer into discrete grains.

[0436] Once storage node 332 is formed, conventional process flow can befollowed to complete a stacked capacitor. Completion of a stackedcapacitor typically comprises depositing a thin dielectric layer overstorage node 332 and forming an upper capacitor plate thereover, asdescribed in the thirteenth method.

[0437] The fourteenth method has several advantages over the stackedcapacitors and stacked capacitor formation methods of the prior art. Forinstance, a stacked capacitor is formed by the fourteenth method thathas large surface area due both to the roughened surface area and to theuse of both sides of free-standing wall 332 a. The large surface areadoes not come at the expense of occupying a large amount of surface areaof the silicon substrate. In addition, these benefits are achieved witha method that is simple, efficient, and with fewer process steps,thereby maintaining a high integrated circuit manufacturing processthroughput and a corresponding low cost.

[0438] 15. Formation of Shaped Polysilicon Structures using IonImplantations of Differing Depth Ranges and Using the Etching Processwhich is Selective to Implanted Silicon-containing Material

[0439] A fifteenth method of the present invention is illustrated inFIGS. 69 through 77. Under the fifteenth method, shaped structures ofpolysilicon or other silicon-containing material are formed with asingle material deposition and a minimum of masking operations. Severalembodiments of the fifteenth method are provided. Each embodiment formsa shaped structure through the implantation of ions. Ions are implantedinto a first selected region of a layer of silicon-containing materialwith a first selected depth range and into a second selected region witha second selected depth range. The second selected depth range extendsshallower into the layer of silicon-containing material than the firstselected depth range. Thereafter, the etching process is conducted whichis selective to implanted silicon-containing material discussed abovefor the first method. Shaped structures are formed that generallycomprise integrally connecting the first and second selected regions.

[0440]FIG. 69 illustrates an initial structure of a basic embodiment ofthe fifteenth method, which is used to form a shaped structure in theform of a free-standing polysilicon bridge. Shown in FIG. 69 is asemiconductor substrate having the form of a semiconductor wafer 340that is formed with a silicon substrate 342. Upon silicon substrate 342is provided a layer of silicon-containing material comprising, in thedepicted embodiment, a polysilicon layer 344. Polysilicon layer 344preferably comprises intrinsic polysilicon as defined above, and isdeposited with a depth dictated by the particular application. Uponpolysilicon layer 344 is formed a masking substrate, one example ofwhich is a photoresist mask 346. Photoresist mask 346 is patterned witha pair of openings 348 which may be of any horizontal shape.

[0441] After photoresist mask 346 is formed, a first ion implantationoperation is conducted in which ions, represented by arrows 350, areimplanted through openings 348 into selected regions of polysiliconlayer 344. These selected regions, in the depicted embodiment, compriseimplanted upright regions 352 and have the form of columns extendingupward from silicon substrate 342 to the top most surface of polysiliconlayer 344. The ions are of a type selected in accordance with an etchingprocess which is selective to implanted silicon-containing material. Theimplantation parameters of the first ion implantation operation areselected in the manner discussed above for the first method, such that afirst depth range of ion implantation is obtained. The implantationparameters may also be appropriately selected to tailor the shape ofimplanted upright region 352 as described above for the first method. Inthe embodiment shown in FIG. 69, the first depth range extends from thetop most surface of polysilicon layer 344 to the bottom of polysiliconlayer 344. After implanted upright regions 352 are formed, photoresistmask 346 is removed.

[0442] As illustrated in FIG. 70, a second photoresist mask 354 or othersuitable masking substrate is subsequently applied for use in a secondion implantation operation. Second photoresist mask 354 is patternedwith an opening 356 extending between and above implanted uprightregions 352. Opening 356 is, in the depicted embodiment, elongated, andhas a width extending in a direction into the page of FIG. 70.

[0443] After second photoresist mask 354 is applied, a second ionimplantation operation is conducted. The implantation of ions isrepresented by arrows 358. The ions are preferably of the same type aswere implanted in the first ion implantation operation and are selectedin the manner discussed above for the first method. The ions could be ofa suitable type other than that used in the first ion implantationoperation. The second ion implantation operation implanted ion within asecond depth range. The second depth range in the depicted embodimentextends from the top most surface of polysilicon layer 344 into andpartially through polysilicon layer 344, extending to an intermediatedepth therein. The second depth range is preferably achieved using animplantation energy range that is reduced from the implantation energyrange used in the first ion implantation operation. Consequently, thesecond depth range extends shallower into polysilicon layer 344 than thefirst depth range. The order of implantation of the first and seconddepth ranges could be reversed, and further ion implantation operationscould also be conducted to implant ions to different depth ranges andwith different implantation patterns.

[0444] The implantations of ions within the second depth range createsan implanted cross-bar region 360 extending between implanted uprightregions 352. The second ion implantation operation, as with the firstion implantation operation, can be conducted with ion implantationparameters appropriately selected to tailor the shape of implantedcross-bar region 360 in the manner described above for the first method.

[0445] Polysilicon layer 344 is subsequently etched with an etchingprocess which is selective to implanted silicon-containing material. Theetching process is conducted substantially in the manner described abovefor the first method and removes portions of polysilicon layer 344 thatare not implanted with ions. Thus, implanted upright regions 352 andimplanted cross-bar region 360 remain and are integrally connected afterthe etching process which is selective to implanted silicon-containingmaterial. Implanted upright regions 352 and implanted cross-bar region360 together form a shaped structure in the form of a free-standingbridge 362 as shown in FIG. 71. Free-standing bridge 362 is formed witha pair of vertically extending uprights 364 and a crossbar 366connecting uprights 364.

[0446] Free-standing bridge 362 may be covered with a further layer suchas a deposited insulative layer and can be used to connect twounderlying charge connecting regions such as active regions or vias.Implanted cross-bar region 360, when formed with a selected thicknessthat can be severed by energy such as a high voltage, can also be usedas a programmable fuse. The programmable fuse is useful, for instance,in constructing a programmable memory device such as a programmable readonly memory (PROM).

[0447] Of course, the combination and order of operations used, asillustrated by way of example in the discussion of FIGS. 69 through 71to form free-standing bridge 362 can be varied. The basic procedure ofFIGS. 64 through 71 can also be used to form other types of shapedstructures.

[0448] A further embodiment of a shaped structure that can be formedwith the fifteenth method of the present invention is depicted in FIG.72. Shown in FIG. 72 is a lever 364 that is suitable for use as acomponent of a micromachine as can be employed in small sensors andactuators. Lever 364 is formed in a manner that is similar to theformation of free-standing bridge 362 of the basic embodiment. Thus, informing lever 368, essentially the same procedure is followed asdiscussed for the formation of free-standing bridge 362. One exceptionto the procedure of the first embodiment is that, when forming implantedupright regions 352, only one implanted upright region 352 is formed.

[0449] The embodiment of FIG. 72 is given by way of example and is notintended to be limiting. For instance, various other micro-machine partscan also be formed by combining and modifying the aforementionedprocedure in a manner that would be apparent to one skilled in the art.

[0450]FIG. 73 depicts yet a further embodiment of the fifteenth methodof the present invention wherein a multiple cross-bar free-standingbridge 370 is formed. Multiple crossbar free-standing bridge 370 isuseful, for example, for forming an electrically severable fuse having aspecified conductivity.

[0451] The manner of forming multiple cross-bar free-standing bridge 370is similar to that of the embodiment of FIGS. 69-71. Thus, a layer ofsilicon-containing material, which in one embodiment is polysiliconlayer 344, is initially formed, and first photoresist mask 346 is thenapplied and patterned thereon as shown in FIG. 69. Ions, represented inFIG. 69 by arrows 350, are then implanted into polysilicon layer 344through openings 348 in photoresist mask 346 in a first ion implantationoperation. The first ion implantation operation implants ions to a firstdepth range extending from the surface of polysilicon layer 344 to thebottom of polysilicon layer 344. A pair of implanted upright regions 348are created by the ion implantation operation.

[0452] Also, as shown in FIG. 70, a second photoresist mask 354 isthereafter applied and patterned. Subsequently, ions represented byarrows 358 are implanted with a second ion implantation operation intoan opening 356 in photoresist mask 366 located above and betweenimplanted upright regions 352. The ions of the second ion implantationoperation are implanted to a second selected depth range that extendsfrom the surface of polysilicon layer 344 partially down intopolysilicon layer 344. The second ion implantation operation creates animplanted cross-bar region 360 that is of the selected depth and extendsbetween implanted upright regions 352.

[0453] A third ion implantation operation is then conducted to implantions into polysilicon layer 344 with a third selected depth range. Informing multiple cross-bar freestanding bridge 370, as shown in FIG. 73,the third ion implantation is conducted with a set of ion implantationparameters that are varied from the second ion implantation operation.The ion implantation parameters are varied such that the third depthrange has an initial depth that is substantially greater than the lowestdepth of the second depth range. The third depth range then has a finaldepth somewhat greater than the initial depth of the third depth range.

[0454] The second and third depth ranges are separated by a selecteddistance, and are preferably selected such that, after conducting theetching process which is selective to implanted silicon-containingmaterial, a multiple cross-bar free-standing bridge 370 results. Asshown, multiple cross-bar free-standing bridge 370 has an upper bridgecross-bar 372 and an underlying bridge cross-bar 374 separated by theselected distance. Further bridge cross-bars could also be formed, andthe bridge cross-bars could be of varying thicknesses. The width ofoverlying and underlying bridge cross-bars 372 and 374 can be tailoredwithout varying the width of opening 356 used during implantation byvarying the angle of the implanted ions. Thus, ions of two selecteddepth ranges could be implanted using the same photoresist mask to formtwo separate cross-bars, and the width of the two cross-bars could bevaried by varying the angles at which the ions are implanted between theion implantation operations that create each of the second and thirddepth ranges.

[0455] In one embodiment, multiple cross-bar free-standing bridge 370 isused as a fuse in a programmable memory device. In so doing, overlyingcross-bar 372 and underlying cross-bar 374 are formed of a thicknessthat can be severed by applied energy. Additional cross-bars of suitablethicknesses can further be formed. The multiple cross-bars can be usedfor tailoring the resistivity of the connection between uprights 364.For instance, if greater conductivity is desired, each of first andsecond cross-bars 372 and 374 are left intact. If a reduced conductivityis desired, one of first and second cross-bars 372, 374 are severed tobreak the connection with uprights 364. Each of first and secondcross-bars 372, 374, and other multiple cross-bars if needed, can be ofdifferent thicknesses and corresponding conductivities to further tailorthe conductivity of the programmable memory device being formed thereby.

[0456] A further embodiment of the fifteenth method is shown in crosssection in FIG. 74. Shown therein is a set of overlapping bridges 376.Overlapping bridges 376 are comprised of an overlying bridge cross-bar378 connected at either end thereof to one of a first set of uprights364 and a perpendicularly oriented underlying bridge cross-bar 380connected at either end thereof to one of a second set of uprights 382.Overlapping bridges 376 of FIG. 74 are useful, for example, wheresemiconductor devices or discrete features of semiconductor devices areto be electrically interconnected in a manner whereby the electricalinterconnections must cross over each other without making electricalcontact. Under conventional methods, doing so would require numerousmaterial deposition and masking operations, whereas under the method ofthe present invention, overlapping bridges 376 of FIG. 74 can be formedwith a minimum of such material deposition and masking operations.

[0457] The formation of overlapping bridges 376 of the fifteenth methodof the present invention is similar to the first embodiment of FIGS. 69through 71. Thus, a polysilicon layer 344 is initially formed, and afirst photoresist mask 346 or other masking substrate is then appliedand patterned as shown in FIG. 69. Ions, represented by arrows 350, arethen implanted with a first ion implantation operation into polysiliconlayer 344 through openings 348 in photoresist mask 346. Unlike theembodiment of FIG. 69, however, four implanted upright regions such asimplanted upright regions 352 seen in FIG. 70 are created. The fourimplanted upright regions form a first set of uprights 364 and a secondset of uprights 382. Second set of uprights 382 are off-set from firstset of upright 364, as shown in FIG. 74, after the etching process isconducted which is selective to implanted silicon-containing material.Subsequently, a second photoresist mask 354 or other masking substrateis applied and patterned with an opening 356 located above and betweenimplanted upright regions 352 as shown in FIG. 70. A second ionimplantation operation is then conducted to create an upper implantedcross-bar region similar to implanted cross-bar region 360. The upperimplanted cross-bar region preferably has a second depth range thatextends from the upper most surface of polysilicon layer 344 to adistance somewhat deeper than the surface of polysilicon layer 344 andforms an overlying bridge cross-bar 378 once the etching process isconducted which is selective to implanted silicon-containing material.

[0458] A third photoresist mask is subsequently formed and a third ionimplantation operation is then conducted. The third ion implantationoperation forms a lower implanted cross-bar region that has a thirddepth range that is deeper than the second depth range. In so doing so,the same procedure is essentially followed as is used for forming theupper implanted cross-bar region. In forming the lower implantedcross-bar region, however, opening 356 is reoriented to form lowerimplanted cross-bar region in a perpendicular or otherwise cross-wiseorientation to the upper implanted cross-bar region. Thereby, once theetching process which is selective to implanted silicon-containingmaterial is conducted, overlying bridge cross-bar 378 will be formed andwill cross over without contacting underlying bridge cross-bar 378.

[0459] In final processing of the embodiment seen in FIGS. 74a and 74 b,the etching process is conducted which is selective to implantedsilicon-containing material as discussed above for the first embodiment.The etching process removes portions of polysilicon layer 344 other thanoverlying bridge cross-bar 378, first set of uprights 376, underlyingbridge cross-bar 380 which extend through first set of uprights 364, andsecond set of uprights 382. The result is overlapping bridges 376 ofFIGS. 74a and 74 b.

[0460] A further embodiment of the fifteenth method is shown in FIGS. 75and 76. In the embodiment of FIGS. 75 and 76, a dry etching process isincorporated into the basic embodiment of the fifteenth method to createa free-standing block of silicon-containing material with an openingextending through the bottom thereof as shown in FIG. 76. The openingcan be later filled with a second material, either an insulator or aconductor. If filled with an insulator, the block of silicon-containingmaterial can serve as a bridge as described for the first embodiment ofthe fifteenth method. If filled with a conductor, the block ofsilicon-containing material can be oxidized and converted to aninsulator, thereby forming an electrical interconnect with an overlyinginsulative layer using a minimum of material deposition and maskingoperations.

[0461] In forming the free-standing block of silicon-containing materialwith an opening extending through the bottom thereof as shown in FIG.75, a layer of silicon-containing material such as a polysilicon layer344 is first formed. Thereafter, polysilicon layer 344 is masked asdescribed for FIGS. 69 and 70 above with a first photoresist mask thatcovers a top region 388 of polysilicon layer 344 located above where anopening 396 is to be formed. A first ion implantation operation isthereafter conducted in the manner discussed for FIGS. 69 and 70. Thefirst ion implantation preferably implants ions into a first side region386 a and a second side region 386 b that adjoin the location where theopening in the polysilicon block 392 seen in FIG. 76 is to be formed.The ions of the first ion implantation operation have a first depthrange extending from the top most surface of polysilicon layer 344 tothe bottom of polysilicon layer 344.

[0462] A second ion implantation operation is then conductedsubstantially in the manner described above for the first method toimplant ions into top region 388 of polysilicon layer 344. A secondphotoresist mask or other masking substrate can be used to define anopening over top region 388, but doing so is not necessary as the ionscan be implanted into first and second side regions 386 a and 386 b aswell. The ions of the second ion implantation operation are implantedwith a second depth range that extends from the top most surface ofpolysilicon layer 344 to an intermediate point in polysilicon layer 344to thereby define a top region 388. In so doing, a relativelyunimplanted region 390 is left remaining under top region 388.Preferably, relatively unimplanted region 390 is elongated and extendslaterally in a direction facing into the page of FIG. 75.

[0463] In an alternative to using a second photoresist mask and ionimplantation operation, the first photoresist mask can be left in placefor the second ion implantation operation. In such a case, an increasedimplantation energy is used such that ions are implanted through thefirst photoresist mask partially into polysilicon layer 344 to implanttop region 388.

[0464] Once top region 388 is implanted, a photoresist mask 366 or othersuitable masking substrate is applied over polysilicon layer 344. Ananisotropic etching process, preferably a dry etching process such asRIE, is then conducted to form polysilicon block 392 shown in FIG. 76.Thereafter, an etching process is conducted which is selective toimplanted silicon-containing material as described above for the firstembodiment. Opening 394 is thereby formed and extends throughpolysilicon block 392 as illustrated. Of course, polysilicon block 392could be of any size, shape or dimension, and opening 394 extendingtherethrough could also be of any size, shape, or dimension. It ispreferred that opening 394 extend completely through polysilicon block392, but applications are contemplated wherein opening 394 does notextend completely through polysilicon block 392, such as where anelectrical interconnect is being formed that is to be surrounded on morethan two sides by insulating material.

[0465] As discussed, opening 394 is in one embodiment filled with aninsulating material to form a bridge. In an alternative embodiment,opening 394 is filled with a conducting material, by, for instance, theprocess of aluminum reflow. In this alternative embodiment, polysiliconblock 392 is preferably converted thereafter to an insulating materialby oxidation of the polysilicon thereof. A line of conducting materialis thereby produced that is surrounded on two or three sides byinsulating material. Under this embodiment, opening 394 is formedextending into the page of FIG. 76 in an elongated fashion and theconducting material filling opening 394 is then used as an interconnectline electrically connecting semiconductor devices or discrete featuresof semiconductor devices. As with the first method, the interconnectline can be of sub-photolithographic resolution dimensions.

[0466] Multiple openings such as opening 394 can be concurrently formedin polysilicon block 392. Also, opening 394 or the multiple of suchopenings can be tailored in height, width, and shape by appropriateselection of the ion implantation parameters in the manner discussedabove for the first method.

[0467] A further embodiment of the fifteen method is shown in FIG. 77.FIG. 77 shows a tunnel 396 extending through polysilicon layer 344.Tunnel 396 can be, for example, filled with an electrically conductivematerial. In such a case, it is preferred that polysilicon layer 344 beconverted to an insulating material as was discussed with respect toFIG. 76. Filling tunnel 396 with conducting material and surroundingtunnel 396 with insulating material would allow tunnel 396 to beemployed as an electrical interconnect between semiconductor devices orportions of semiconductor devices. Tunnel 396 can be formed with aminimum of masking and material deposition operations, as describedabove with the implementation and etch selective processes detailedherein.

[0468] In forming tunnel 396 of FIG. 77, ion implantation is conductedin a similar manner to the ion implantation operations of FIGS. 69 and70. Unlike the ion implantation operation of FIGS. 69 and 70, however, amasking substrate such as photoresist mask 346 of FIG. 69 is used thatleaves openings over a first side region 398 and second side region 402adjoining at either end the area where tunnel 396 is to be formed. Ionsof a type selected in accordance with the etching process which isselective to implanted silicon-containing material of the first methodare then implanted into the entirety of first and second side regions398 and 402. A second photoresist mask, or other masking substrate, isthen formed leaving an opening over a top region 400 situated above thelocation where a bottom portion of tunnel 396 is to be formed.

[0469] Ions are then implanted with a second ion implantation operationinto top region 400. In the second ion implantation operation, the ionsare implanted with a selected depth range of less depth than the depthrange of the first ion implantation operation, such that the implantedions penetrate only partially into polysilicon layer 344 to implant topregion 400 and not the location where a bottom portion of tunnel 396 isto be formed.

[0470] Thereafter, an etching process is conducted which is selective toimplanted silicon-containing material as discussed above for the firstembodiment. Implanted portions of polysilicon layer 344, including firstand second side regions 398 and 402 as well as top region 400, are leftremaining, while polysilicon is removed from tunnel 396, to produce thestructure shown in FIG. 77.

[0471] The structures produced by the fifteenth method of the presentinvention are generally constructed with fewer material deposition andmasking operations than can be achieved without the use of the fifteenthmethod of the present invention. Accordingly, the shaped structure canbe formed efficiently, while maintaining a high throughput and a lowcost of the integrated circuit manufacturing process.

[0472] 16. Formation of a Bottle-shaped Trench with the Etching Processwhich is Selective to Implanted Silicon-containing Material

[0473] A sixteenth method of the present invention is depicted in FIGS.78 through 81. The sixteenth method is used to form a bottle-shapedtrench that is useful for forming a trench capacitor or trench isolationregion. The bottle-shaped trench of the sixteenth method is wider at thebottom thereof than at the top thereof. Thus, the bottle-shaped trenchfacilitates dense packing of semiconductor devices on the semiconductorsubstrate.

[0474]FIG. 78 shows the initial structure in forming the bottle-shapedtrench. In the embodiment depicted in FIGS. 78 and 79, a bottle-shapedtrench is being formed between transistors in a CMOS circuit on asemiconductor substrate comprising a silicon substrate of asemiconductor wafer. Nevertheless, one skilled in the art will readilyappreciate that the bottle-shaped trench formed by the sixteenth methodcould be formed within any volume of silicon and on any type ofsemiconductor substrate.

[0475] The initial procedure in forming the structure of FIG. 78comprises providing a volume of silicon-containing material. In thedepicted embodiment, the volume of silicon-containing material comprisesa semiconductor wafer 410 which is formed on a silicon substrate 412. Apair of gate regions 414 are also formed on silicon substrate 412. Gateregions 414 are encased in insulating spacers 416. Active regions 412 aare also formed in silicon substrate 412 adjacent gate regions 414. Insubsequent processing, a masking substrate in the form of a photoresistmask 418 is formed over silicon substrate 12 and over gate regions 414.A trench 420 is then anisotropically etched into silicon substrate 412through an opening 418 a in photoresist mask 418. Trench 420 ispreferably formed with substantially anisotropic sidewalls.

[0476] Of course, gate regions 414 and active regions 412 a need not beformed prior to trench formation and could be formed at any suitablestage in the integrated circuit manufacturing process, including afterthe bottle-shaped trench is formed and filled to form a trench isolationregion or trench capacitor.

[0477] Subsequently, in the sixteenth method, ions of a selected type,represented by arrows 422, are implanted into a sidewall 420 a and abottom 420 b of anisotropic trench 420. The ions are of a selected typedetermined in accordance with an etching process which is selective tounimplanted silicon-containing material as described above in thediscussion of the second method. The ion implantation operation ispreferably conducted to implant ions at an angle other than orthogonalto silicon substrate 412. Thus, the ions are implanted with an angulatedtrajectory that causes the ions to be implanted into corners of trench420.

[0478] An implanted region 424 is formed with a thin top implantedportion 424 a at the top of trench 420 and a thicker bottom implantedportion 424 b at the bottom of trench 420. The angle of implantation ispreferably selected to implant as great an amount of ions into thecorners of trench 420 as is possible. Other implantation parameters canalso be selected to tailor the dimensions of top implanted portion 424 aand bottom implanted portion 424 b in the manner described above in thediscussion of the first and second methods. For instance, the ionimplantation operation could be conducted in multiple implantationstages with the angle of the ion implantation being varied between themultiple implantation stages.

[0479] In further processing of the sixteenth method, the implantedportions of the sidewalls and bottom of trench 420 are etched with anetching process which is selective to unimplanted silicon-containingmaterial. The etching process is conducted substantially in the mannerdescribed in the description of the second method above. The results area bottle-shaped trench 426 as shown in FIG. 79. Bottle shaped trench 426is formed with a continuous sidewall 426 a that extends verticallydownward into silicon substrate 412. Sidewall 426 a of bottle shapedtrench 426 has an upper neck portion 426 b that is relatively narrow,and a bulbous bottom portion 426 c that is wider than upper neck portion426 b.

[0480]FIG. 80 shows one application of bottle-shaped trench 426, whereina CMOS DRAM memory cell is being constructed that is to be associatedwith a trench capacitor 434 that is to be formed. In forming trenchcapacitor 434, a storage node layer 428 is first formed withinbottle-shaped trench 426. In the depicted embodiment, storage node layer428 comprises a polysilicon layer deposited by chemical vapor deposition(CVD). Thereafter, a dielectric layer 430 is formed over storage nodelayer 428 in bottle-shaped trench 426, preferably as a grown oxidelayer. Once dielectric layer 430 is formed, an upper capacitor plate 432is deposited over dielectric layer 430. Upper capacitor plate 432 isalso preferably formed from polysilicon with a CVD process. Storage nodelayer 428 is thereafter electrically connected to one of transistors 414in any suitable manner, and upper capacitor plate 432 is electricallyconnected to a word line in any suitable manner.

[0481] Trench capacitor 434 is formed with a greater surface area thanit would otherwise have, due to the shape of bottle-shaped trench 426that is wider at the bottom thereof than at the top thereof. The shapeof bottle-shaped trench 426 allows for denser packing of semiconductordevices on semiconductor wafer 410 due to the minimal surface space ofsilicon substrate 412 that is occupied. Trench capacitor 434 also has ahigh capacitance due to the large surface area with which bottle-shapedtrench 426 is formed.

[0482] Bottle-shaped trench 426 is useful for formation of an improvedtrench isolation region 440 as shown in FIG. 81. In forming trenchisolation region 440, a volume of insulating material is formed within abottle-shaped trench. In one embodiment, the volume of insulatingmaterial comprises a thermal oxide layer 436 that is grown on thesidewalls and bottom of the bottle-shaped trench. Also, an oxide fillerlayer 438 is deposited within the remainder of the bottle-shaped trench.Oxide filler layer 438 is preferably deposited with a TEOS process.Resulting trench isolation region 440 occupies a minimum of surface areaof silicon substrate 412 and accordingly facilitates a dense packing ofsemiconductor devices thereon. A large surface area and an extendeddepth are also provided, resulting in a high resistance to cross-talkcurrent leakage between transistors located on either side thereof.

[0483] 17. Formation of Silicon-containing Material a on HorizontalSurface with the Etching Process which is Selective to ImplantedSilicon-containing Material

[0484] A seventeenth method of the present invention is illustrated inFIGS. 82 through 86. The seventeenth method is used to formsilicon-containing material on substantially horizontal surfaces at thetop and to the sides of a protruding structure. Silicon-containingmaterial, under the seventeenth method, is not formed on substantiallyvertical surfaces or at the bottom of substantially vertical surfaces.Several applications for the use of the shaped structure formed therebyare also described herein, including an application for use inincreasing the conductivity of existing interconnect structures, anapplication for use in forming new interconnect structures, and anapplication for use as an implant mask for a halo implant to providepunch-through protection.

[0485]FIG. 82 shows an initial structure for the seventeenth method.Under the seventeenth method, a semiconductor substrate, such as asemiconductor wafer 450, is initially provided. In the depictedembodiment, semiconductor wafer 450 is used in forming a CMOS integratedcircuit and has provided thereon two N+ doped source/drain regions 452 aand an intervening lightly P-doped channel region 452 b. Verticallyextending surfaces and horizontally extending surfaces are provided onsemiconductor wafer 450 in the form of a protruding structure. Theprotruding structure in the embodiment of FIG. 82 comprises a gateregion 454 which is located above lightly P-doped channel region 452 b,and which has formed thereon a nitride spacer 456. Both gate region 454and nitride spacer 456 are formed in a conventional manner. A gate oxidelayer 454 is, in the depicted embodiment, formed under gate region 454.Gate region 454 can be elongated, such that it protrudes in a directionlooking into the page of FIG. 82, as for instance, when gate region 454comprises a word line of a DRAM memory circuit.

[0486] Under the seventeenth method, a volume of silicon-containingmaterial is formed over the protruding structure. Thus, in the depictedembodiment of FIG. 82, a polysilicon layer 458 is formed over gateregion 454 and nitride spacer 456. Polysilicon layer 458 is preferablyformed of intrinsic polysilicon and can be formed in any suitablemanner.

[0487] Once polysilicon layer 458 is formed, an ion implantationoperation is conducted, represented in FIG. 82 by arrows 460, to implantions into horizontal surfaces 458 a of polysilicon layer 458. Theimplanted ions are of a selected type chosen in accordance with anetching process which is selective to implanted silicon-containingmaterial, as discussed above for the first method. The ions arepreferably implanted with an angle of implantation that is substantiallyorthogonal to horizontal surfaces 458 a.

[0488] After conducting the ion implantation operation, the etchingprocess which is selective to implanted silicon-containing material isconducted in a manner substantially in accordance with the discussion ofthe first method above. The results of the etching process are shown inFIG. 83. As shown therein, all substantially vertical segments 458 b ofpolysilicon layer 458 have been moved, and all substantially horizontalsegments 464 of polysilicon layer 458 remain. A top polysilicon region462 is situated over gate region 454 and nitride spacer 456. A pair ofside polysilicon regions 464 also remain at the sides of gate region 454and are separated from gate region 454 by a pair of openings 464 ahaving a width corresponding approximately to the width of toppolysilicon region 462.

[0489] As discussed above, the structure created by the presentinvention has several applications. One application is shown in FIG. 83.Shown in FIG. 83 is a MOS transistor having a gate region 454, two N+doped source/drain regions 468 located at the sides of gate region 454,and a lightly P-doped channel region 452 b of silicon substrate 452located between N+ doped source/drain regions 452 a. One problem withrelated conventional structures is that, even when gate region 454 doesnot have an applied voltage so as to turn on the transistor, chargeleakage, known as punch-through, can occur from N+ doped source/drainregions 452 a across lightly P-doped region 452 b. One manner ofpreventing punch-through is to form small, highly doped P+ regions 468within lightly P-doped region 452 b at the edges of N+ dopedsource/drain regions 452 a. The seventeenth method provides a convenientmanner of forming an implant mask in the form of top polysilicon region462 and side polysilicon regions 464 that define suitable openings 464 aat the sides of gate regions 454 for implanting P-type dopants to formhighly doped P+ regions 468.

[0490] Thus, once top polysilicon region 462 and side polysiliconregions 464 together with openings 464 a are formed as described,implantation of P-type dopants, represented by arrows 466, is conductedto form highly doped P+ regions 468, which serve to preventpunch-through as described.

[0491] The embodiment depicted in FIGS. 82 and 83 is only one particularembodiment of the seventeenth method and is given by way of exampleonly. Other applications of the seventeenth method will be readilyapparent to one skilled in the art. For instance, the protrudingstructure could comprise an interconnect line used for providingelectrical communication between semiconductor devices on an integratedcircuit. Accordingly, FIG. 84 depicts an initial structure in a secondembodiment of the seventeenth method wherein polysilicon regions areformed over and to the sides of a protruding structure that, in thedepicted embodiment, has the form of an aluminum interconnect line 470.Aluminum interconnect line 470 may or not be provided with an insulatingspacer 462 a at the top thereof as will be hereafter discussed.

[0492] As shown in FIG. 84, a polysilicon layer 458 is formed overaluminum interconnect line 470. Polysilicon layer 458 is preferablyformed of intrinsic polysilicon and can be formed or deposited in anysuitable manner.

[0493] An ion implantation operation, represented by arrows 460, is thenconducted to implant ions into horizontal surfaces 458 a of polysiliconlayer 458 to the exclusion of lateral portions 458 b. The implanted ionsare of a selected type chosen in accordance with an etching processwhich is selective to implanted polysilicon, as discussed above for thefirst method. After ion implantation, the etching process is conductedto etch away all portions of polysilicon layer 458 located on exposedvertical surfaces of aluminum interconnect line 470. Portions ofpolysilicon layer 458 located on substantially horizontal surfaces ofaluminum interconnect line 470 are left remaining by the etchingprocess. Thus, as is shown in FIG. 85, top polysilicon region 462 isleft situated over aluminum interconnect line 470 and insulating spacer462 a. Side polysilicon regions 464 are also left remaining at the sidesof aluminum interconnect line 470 and are separated from aluminuminterconnect line 470 by a pair of openings 464 a having a widthcorresponding to approximately the width of top polysilicon region 462.

[0494] Merely by increasing the amount of conducting material onaluminum interconnect line 470 in the form of top polysilicon region462, the conductivity of aluminum interconnect line 470 is increased.Nevertheless, in order to further increase the conductivity of toppolysilicon region 462 and side polysilicon regions 464, a silicidationprocess can be conducted to convert top polysilicon region 462 and sidepolysilicon regions 464 to a silicide material.

[0495] Thus, in one embodiment, shown in FIG. 85, silicidation isaccomplished by forming titanium layer 472 over top polysilicon region462 and side polysilicon regions 464. Thereafter, a heat treatment, suchas a rapid thermal anneal, is conducted to react titanium layer 472 withtop polysilicon region 462 and side polysilicon regions 464 to converttop polysilicon region 462 and side polysilicon regions 464 to titaniumsilicide (TiSi_(x)). In so doing, titanium layer 472 will besubstantially converted to titanium silicide, except for portions oftitanium layer 472 located on surfaces such as sidewalls of aluminuminterconnect line 470 that do not have polysilicon thereon. Thus, afterconducting the silicidation operation, remaining unreacted regions oftitanium layer 472 are removed. Removal of titanium layer 472 ispreferably accomplished by conducting an etching process that etchestitanium, or any alternative metal of which the silicide is formed, anddoes not substantially etch titanium silicide or a silicide of analterative metal of which the silicide is formed. The resultingstructure is shown in FIG. 86. As shown in FIG. 86, aluminuminterconnect line 470 is covered by a top titanium silicide region 476and has formed at the side thereof side titanium silicide regions 474.If the purpose of the application of the seventeenth method is toincrease the conductivity of aluminum interconnect line 470, noinsulating spacer 462 a will be previously formed, and side titaniumsilicide regions 474 can be removed. Alternatively, side titaniumsilicide regions 474 might be desired for use as additional interconnectlines, and can be patterned for such use.

[0496] Top titanium silicide region 476 might be used as a separateinterconnect line, such that it can carry signals independent ofaluminum interconnect line 470. In order to form a separate interconnectline from aluminum interconnect line 470, insulating spacer 462 a isformed on aluminum interconnect line 470 prior to forming toppolysilicon region 462 and side polysilicon regions 464 of FIG. 85.

[0497] Rather than being formed of a conducting material as is aluminumconnect line 470, the protruding structure can be formed of aninsulating material. This allows multiple interconnect lines to beformed closely together. By example in FIG. 86, aluminum interconnectline 470 would be formed of a conducting material, and top titaniumsilicide region 486 and side titanium silicide regions 474 wouldcomprise separate conducting lines that are electrically isolated by theinsulating protruding feature, in this case, a line of insulatingmaterial in the place of aluminum interconnect line 470.

[0498] The seventeenth method selectively forms silicon-containingmaterial on horizontal surfaces of a protruding structure without theneed for masking or dry etching. New conductive shaped structures can beformed and the conductivity of existing shaped structures can beincreased.

[0499] 18. Formation of Thin Interconnect Lines having Integral LargerStructures of Greater Width than the Thin Interconnect Lines with theEtching Process which is Selective to Implanted Silicon-containingMaterial

[0500] An eighteenth method of the present invention is illustrated inFIGS. 87 through 90. The eighteenth method is used to form aninterconnect line together with an integral structure of greater widththan the interconnect line that is used for electrically connecting theinterconnect line to a larger structure. The eighteenth method forms aninterconnect line that can be of sub-photolithography resolutiondimensions. The interconnect line, and the integral structure of greaterwidth than the interconnect line, can be integrally formed under theeighteenth method with a single material deposition operation and withtwo masking operations.

[0501]FIGS. 87 through 90 depict one embodiment of the eighteenthmethod, wherein a pair of interconnect lines are formed of asilicon-containing material on a semiconductor substrate. FIG. 87 is across-sectional view showing a starting structure for the eighteenthmethod wherein a semiconductor substrate is provided. In the depictedembodiment, the semiconductor substrate is a semiconductor wafer 480having thereon a silicon substrate 482. Once semiconductor wafer 480 andsilicon substrate 482 are provided, a volume of silicon-containingmaterial is formed on silicon substrate 482. In the depicted embodiment,the volume of silicon-containing material comprises a polysilicon layer484. Polysilicon layer 484 is preferably formed of intrinsic polysiliconand is deposited in any suitable manner, as described above in thediscussion of the first method.

[0502] Once polysilicon layer 484 is formed, a masking substrate such asa photoresist mask 486 is applied over polysilicon layer 484.Photoresist mask 486 is patterned with openings 488 at each location inpolysilicon layer 484 wherein the integral structures of greater widththan the interconnect lines are to be formed. The openings are formedwith the shape of the integral structures of greater width than theinterconnect lines.

[0503] Once photoresist mask 486 is patterned, an ion implantationoperation, represented by arrows 490, is conducted. The ion implantationoperation is conducted substantially as described above in thediscussion of the first method. Consequently, the ions of the ionimplantation operation are of a selected type chosen in accordance withan etching process which is selective to implanted silicon-containingmaterial. The ions are implanted through openings 488 in photoresistmask 486 into selected regions 492 of polysilicon layer 484 where theintegral structures of greater width than the interconnect lines are tobe formed. The parameters of the ion implantation operation can beappropriately selected in the manner described in the discussion of thefirst method above to tailor the shape of selected regions 492.Consequently, the implantation of ions into selected regions 492 definesthe shape of the integral structures of greater widths than theinterconnect lines.

[0504]FIG. 88 is a top down view showing the results of furtherprocessing in the eighteenth method. Once selected regions areimplanted, photoresist mask 486 is removed and a second photoresistmask, not shown in FIG. 88, is formed over polysilicon layer 484. Thesecond photoresist mask is patterned to mask over a selected surfaceshape of a block of polysilicon. An anisotropic etching process, such asa dry etching process, is then conducted to reduce polysilicon layer 484to the selected surface shape. One such selected surface shape isdepicted by way of example in FIG. 88 wherein there is shown a patternedpolysilicon block 494 of the selected surface shape that has been formedfrom polysilicon layer 484 with an anisotropic etching process.

[0505] The selected surface shape defines a perimeter of polysiliconblock 494 comprising laterally extending surfaces at which theinterconnect lines will be formed. Consequently, selected regions 492are preferably proximal to the outer perimeter of patterned polysiliconblock 494 so as to be integrally connected to the interconnect linesonce the interconnect lines are formed.

[0506] In the depicted embodiment, interconnect lines are being formedaround the entire perimeter of patterned polysilicon block 494. In sucha situation, structures are preferably provided for forming breaks inthe interconnect lines. Thus, as one example of a means for formingbreaks in the interconnect lines, a pair of sacrificial spacer blocks496 a and 496 b are placed close to the locations at the perimeter ofpatterned polysilicon block 494 where the breaks in the interconnectlines are to be formed. The placement of sacrificial spacer blocks 496 aand 496 b determines the location of the breaks in the interconnectlines as will be shown,

[0507]FIG. 89 is a cross-sectional view showing a second photoresistmask 492. Implanted selected regions 492 are shown in patternedpolysilicon block 494. Second photoresist mask 492 is preferably left inposition over patterned polysilicon block 494 after the anisotropicetching process is conducted. A second ion implantation process is thenconducted after the anisotropic etching process is completed and isrepresented in FIG. 89 by arrows 500. The second ion implantationprocess is conducted with ions of a selected type that may be the sameas the first ion implantation process, or may be of another selectedtype compatible with the etching process which is selective to implantedsilicon-containing material of the present invention.

[0508] The second ion implantation process is preferably conducted withan angle of implantation other than orthogonal to the surface ofsemiconductor wafer 480, causing the ions to impact the laterallyextending surfaces on the edges of patterned polysilicon block 494.Implanted edge regions 502 are thus formed at the edges of patternedpolysilicon block 494. Implanted edge regions 502 have a thicknessdetermined by the parameters of the ion implantation operation, asdiscussed for the first, sixth, and seventh methods. Thus, for instance,varying the angle of implantation or the implantation energy of theimplanted ions will alter the thickness of implanted edge regions 502.Additionally, in order to maintain a uniform thickness and profile ofimplanted edge regions 502, the ion implantation operation can beconducted in multiple stages wherein the angle, implantation energy, orother parameters are varied for each stage as discussed in relation toFIG. 3. In order to uniformly implant each sidewall of patternedpolysilicon block 494, ions can be implanted with an angle or set ofangles having a horizontal component directed to each side of patternedpolysilicon block 494. Alternatively, semiconductor wafer 480 can berotated using an angle or set of angles having a single horizontalcomponent.

[0509] Second photoresist mask 492 is of a selected thickness that stopsthe implanted ions from penetrating through second photoresist mask 492into the interior of patterned polysilicon block 494. Accordingly, otherthan prior implanted selected regions 492, ions do not penetratesubstantially into the interior of patterned polysilicon block 494.

[0510]FIG. 90 is a top-down view depicting the results of a furtherprocedure of the eighteenth method. After the second ion implantationoperation is conducted, an etching process is conducted which isselective to implanted silicon-containing material, as described abovein the discussion of the first method. As a result, unimplantedsilicon-containing material is removed from the interior of thepatterned polysilicon block of FIGS. 88 and 89, while implanted portionsare left remaining, forming thereby the structure of FIG. 90. Shown inFIG. 90 are two interconnect lines which are left side interconnect line504 and right side interconnect line 506, each having a heightcorresponding to the depth of polysilicon layer 484 and asub-photolithographic width determined by the selection of the ionimplantation operation parameters.

[0511] Also left remaining after the etching process, as depicted inFIG. 90, is upper sacrificial spacer block 512 and corresponding lowersacrificial spacer block 516, which remain from sacrificial spacerblocks 496 a and 496 b, respectively. During the ion implantationoperation, sacrificial spacer blocks 512, 516, together with portions ofphotoresist mask 492 formed over sacrificial spacer blocks 512, 516,create a shadow effect that blocks the ions being angularly implantedfrom contacting a portion of the sidewall of patterned polysilicon block494. As a result, openings 514 and 518 are formed. Openings 514 and 518enable the formation of two separate interconnect lines that areelectrically isolated from each other to be formed, rather than theformation of a single continuous interconnect line.

[0512] If a single continuous interconnect line with no interveningopenings is to be formed, openings 514 and 518 need not be formed. If asingle opening is desired, only one of sacrificial spacer blocks 496 aand 496 b would be used. If more than two openings are desired, furtherspacer blocks similar to sacrificial spacer blocks 496 a and 496 b wouldbe used. Spacer blocks 496 a and 496 b are placed sufficiently close topatterned polysilicon block 494 of FIG. 88 to conserve surface area andeffectively block the implantation of ions. At the same time, spacerblocks 496 a, 496 b are spaced sufficiently far away from patternedpolysilicon block 494 that, when the eighteenth method is concluded andthe structure of FIG. 90 is formed, electrical charge will not beconducted from left and right side interconnect lines 504 and 506 toupper and lower sacrificial spacer blocks 512 and 516.

[0513] In an alternative embodiment, the order of implanting selectedimplanted regions 492 and implanting implanted edge regions 502 isreversed. A still further embodiment of the eighteenth method is used asan alternative to the use of sacrificial spacer blocks 496 a and 496 b.The further embodiment is also a specific example of a means for formingbreaks in left and right side interconnect lines 504, 506. In thisembodiment, after conducting the etching process which is selective toimplanted silicon-containing material, a third photoresist mask, notdepicted, is used to cover portions of left side interconnect lines 504and 506 that are intended to remain. Portions of left and right sideinterconnect lines 504, 506 that are intended to be broken are leftunmasked. Thereafter, an etching process, preferably an anisotropic dryetch for polysilicon as described above, is conducted to remove theunmasked portions of left and right side interconnect lines 504, 506,thereby forming breaks in left and right side interconnect lines 504,506.

[0514] Additionally, in embodiments wherein an interconnect line isdesired to be formed at the location of only one, two or three sides ofpatterned polysilicon block 494 of FIG. 88, ions are implanted,respectively, into the one, two or three sides of patterned polysiliconblock 494 during the second ion implantation operation. Selectivelyimplanting ions into less than all sides of polysilicon block 494 can beaccomplished by directing ions in a trajectory having an angle or anglesof implantation that will cause the ions to contact only the sides ofpatterned polysilicon block 494 where the interconnect lines areintended to be formed. Also, ions can be implanted into specified sidesof patterned polysilicon block 494 by using an angle or set of anglesthat initially causes ions to contact a single side of patternedpolysilicon block 494, and then rotating semiconductor wafer 480 in sucha manner that other sides of patterned polysilicon block 494 are exposedto the implantation of ions.

[0515] Left and right side interconnect lines 504, 506 have a thicknessdetermined by the thickness of implanted edge regions 502 of FIG. 89.Consequently, as discussed in the fourteenth embodiment, the parametersof the ion implantation operation are appropriately selected todetermine the thickness of left and right side interconnect lines 504,506. It is preferred that polysilicon layer 484 of FIG. 87 be depositedwith a depth in a range from about 250 angstroms to about 4000angstroms, corresponding to the final height of left and right sideinterconnect lines 504, 506. Also, ions are preferably implanted intoimplanted edge regions 502 with a uniform thickness in a range fromabout 200 angstroms to about 3000 angstroms. Consequently, whencompleted, left and right side interconnect lines 504, 506 formelongated strips with a height, as determined by the deposition ofpolysilicon layer 484, in a range from about 250 angstroms to about 4000angstroms and a thickness, as determined by the implantation of edgeregions 502, in a range from about 200 angstroms to about 3000angstroms. More preferably, left and right side interconnect lines 504,506 are formed with a height in a range of about 500 to 3000 angstroms,and also more preferably, left and right side interconnect lines 504,506 are formed with a width in a range from about 300 angstroms to about2000 angstroms. Most preferably, left and right side interconnect lines504, 506, once completed, have a height of about 1000 angstroms and awidth of about 1000 angstroms.

[0516] Also formed in FIG. 90 are six integral structures of greaterwidth than the interconnect lines which in the depicted embodiment havethe form of contact pads. The contact pads, as shown, include a leftupper contact pad 508 a, a left middle contact pad 508 b, a left lowercontact pad 508 c, a right upper contact pad 510 a, a right middlecontact pad 510 b, and a right lower contact pad 510 c. Contact pads 508a through 508 c and 510 a through 510 c are formed with a greater widththan that of the left and right side interconnect lines 504, 506. Theycan be formed to any desired width surface shape, and are preferablyintegrally connected with either or both of left interconnect line 504and right interconnect line 506.

[0517] Left and right side interconnect lines 504, 506 of the depictedembodiment are suitable for use in conjunction with word lines in a MOSDRAM memory array structure. Accordingly, in such an embodiment, leftupper contact pad 508 a and right upper contact pad 510 a are employedas landing pads for contacts extending to bit lines on a different levelof the semiconductor substrate. Left middle contact pad 508 b and rightmiddle contact pad 510 b are used as gate regions of relatively largeMOS transistors. Also, left and right lower contact pads 508 c, 510 care used for landing pads to make contact with external control lines orother such uses.

[0518] Left and right side interconnect lines 504, 506 can also passover active regions. When so doing, source/drain regions can be formedaround left and right side interconnect lines 504, 506 to form MOStransistors. Due to the small dimensions with which left and right sideinterconnect lines 504, 506 are formed, the resulting MOS transistorswill have correspondingly narrow channel lengths, The narrow channellengths make possible even faster device speeds, thereby providing forincreased speed of the integrated circuit being formed.

[0519] The particular shape of patterned polysilicon block 494 of FIG.88 as depicted was arbitrarily chosen, and as is readily apparent,patterned polysilicon block 494 need not be formed with the depictedshape. Accordingly, left and right side interconnect lines 504, 506 alsoneed not be of the shape of the depicted embodiment and could have anydesired shape or length, as required by the particular application.

[0520] Thus, the eighteenth method forms an interconnect line that isintegrally connected with an integral structure of greater width thanthe interconnect line for electrically connecting the interconnect linewith a larger feature of greater width. Additionally, the interconnectline and integral large structure with a width greater than that of theinterconnect line are formed by the eighteenth method with a singlematerial deposition operation and can be formed with two maskingoperations. The eighteenth method provides an interconnect line of awidth that is less than that which can be achieved by conventionalphotolithography resolution. At the same time, the interconnect line canbe connected to structures of greater width. Due to the dimensions withwhich the interconnect line is formed, the integrated circuit beingformed can be miniaturized. Additionally, when the interconnect line isemployed as a gate region by implanting source/drain regions to eitherside thereof, narrow channel lengths can be achieved, allowing for anincrease in the speed of the resulting integrated circuit.

[0521] The present invention may be embodied in other specific formswithout departing from its spirit or essential characteristics. Thedescribed embodiments are to be considered in all respects only asillustrative and not restrictive. The scope of the invention is,therefore, indicated by the appended claims rather than by the foregoingdescription. All changes which come within the meaning and range ofequivalency of the claims are to be embraced within their scope.

What is claimed and desired to be secured by United States LettersPatent is:
 1. A method of selectively removing material from asemiconductor substrate, comprising: providing a volume of a materiallocated on a semiconductor substrate, said volume of said materialhaving therein a first portion and a second portion, the first portionhaving implanted therein atomic particles at a first concentration, andthe second portion having implanted therein said atomic particles at asecond concentration, wherein the first concentration is greater thanthe second concentration; selectively removing said material, whereinthe material removal rate from the second portion is greater than thematerial removal rate from the first portion; and maintaining thesemiconductor substrate within a temperature range after said first andsecond portions of said volume of said material were implanted with saidatomic particles and until selectively removing said material from thesecond portion, so that the implanted atomic particles in the volume ofthe material are not substantially diffused.
 2. A method of selectivelyremoving material from a semiconductor substrate, comprising: providinga volume of a material located on a semiconductor substrate, said volumeof said material having therein a first portion and a second portion,the first and second portions having implanted therein ions, such thatthe ion concentration in the first portion is greater than the ionconcentration in the second portion, wherein said implanted ions in saidvolume of said material are substantially undiffused subsequent toimplantation therein, and wherein the volume of the material comprises asilicon-containing material selected from the group consisting ofmonocrystalline silicon, amorphous silicon, spherical grain polysilicon,hemispherical grain polysilicon, and polysilicon; selectively removingsaid material, wherein the material removal rate from the second portionis greater than the material removal rate from the first portion; andmaintaining the semiconductor substrate within a temperature range aftersaid first and second portions of said volume of said material wereimplanted with said ions until selectively removing said material fromthe second portion, such that the implanted ions in the volume of thematerial are not substantially diffused.
 3. A method of selectivelyremoving material from a semiconductor substrate, comprising: implantingatomic particles into a volume of a material located on a semiconductorsubstrate to form therein a first and a second portions, the firstportion having therein implanted atomic particles at a firstconcentration and the second portion having therein implanted atomicparticles at a second concentration, wherein said first concentration isgreater than said second concentration; and selectively removing saidmaterial, wherein the material removal rate from the second portion isgreater than the material removal rate from the first portion, andwherein said removing is performed by exposing the volume of thematerial to tetramethyl ammonium hydroxide (TMAH).
 4. A method asrecited in claim 3, wherein said removing is performed by exposing thevolume of the material to a solution containing TMAH in a concentrationrange from about 1 weight percent to about 10 weight percent.
 5. Amethod of selectively removing material from a semiconductor substrate,comprising: implanting atomic particles into a volume of a materiallocated on a semiconductor substrate to form therein a first and asecond portions, the first portion having therein implanted atomicparticles at a first concentration and the second portion having thereinimplanted atomic particles at a second concentration, wherein said firstconcentration is greater than said second concentration; removing saidmaterial, wherein the material removal rate from the second portion isgreater than the material removal rate from the first portion; whereinthe method maintains the semiconductor substrate within a temperaturerange after implanting said atomic particles into the volume of thematerial and until removing said material from the second portion.
 6. Amethod of selectively removing material from a semiconductor substrate,comprising: implanting, in a plurality of implantation steps, atomicparticles into a volume of a material located on a semiconductorsubstrate to form therein a first and a second portions, the firstportion having implanted therein atomic particles at a concentrationthat is greater than the concentration of said atomic particles that areimplanted in the second portion; and removing said material, whereinsaid removing is performed selectively so that the material removal ratefrom the second portion is greater than the material removal rate fromthe first portion, and wherein: a portion of said atomic particles in atleast one of said plurality of implantation steps is of a type thatalters the electrical properties of the material; and a portion of saidatomic particles in at least one of said plurality of implantation stepsis of a type that does not substantially alter the electrical propertiesof the material.
 7. A method of selectively removing material from asemiconductor substrate, comprising: doping a volume of the materialwith a dopant that alters the electrical properties of the material;implanting atomic particles into the material to form therein a firstand a second portions, the first portion having implanted therein atomicparticles at a concentration that is substantially greater than theconcentration of the atomic particles that are implanted in the secondportion; and selectively removing said material, wherein the materialremoval rate from the second portion is greater than the materialremoval rate from the first portion.
 8. A method of removing materialfrom a semiconductor substrate, comprising: implanting ions into asilicon-containing material located on a semiconductor substrate to formtherein a first and a second portions, the first portion having thereina concentration of said ions that is greater than the concentration ofsaid ions implanted in the second portion, and wherein thesilicon-containing material comprises a material selected from the groupconsisting of monocrystalline silicon, amorphous silicon, sphericalgrain polysilicon, hemispherical grain polysilicon, and polysilicon;maintaining the semiconductor substrate within a temperature range aftersaid implanting of ions; and removing the silicon-containing materialwith an agent containing tetramethyl ammonium hydroxide (TMAH) so as toremove said silicon-containing material from the second portion at amaterial removal rate that is greater than the material removal ratefrom the first portion, wherein the implanted ions in thesilicon-containing material are not substantially diffused prior toremoving the silicon-containing material.
 9. A method of selectivelyremoving material from a semiconductor substrate as recited in claim 8,wherein said ions are of a type that does not substantially alter theelectrical proeprties of the silicon-containing material; wherein saidagent containing TMAH contains TMAH at a concentration range from about1 weight percent to about 10 weight percent; and wherein the secondportion is removed at a material removal rate that is at least about 20times greater than the material removal rate from the first portion. 10.A method of removing material from a semiconductor substrate,comprising: providing a silicon-containing material located on asemiconductor substrate that is doped with a dopant to a dopantconcentration in a range from about 1×10¹⁵ dopant atoms per cm³ to about1×10¹⁹ dopant atoms per cm³, wherein the dopant substantially alters theelectrical properties of the silicon-containing material, wherein thesilicon-containing material comprises a material selected from the groupconsisting of monocrystalline silicon, amorphous silicon, sphericalgrain polysilicon, hemispherical grain polysilicon, and polysilicon;implanting ions into the silicon-containing material to form therein afirst and a second portions, the first portion having a concentration ofsaid ions implanted therein in a range from about 1×10¹⁵ ions per cm³ toabout 1×10²² ions per cm³, and the second portion having a concentrationof said ions implanted therein that is less than about 1×10¹⁵ ions percm³, wherein implanting said ions into said silicon-containing materialcomprises a plurality of ion implantation steps, and wherein: a portionof said ions in at least one of said plurality of implantation steps isof a type that alters the electrical properties of thesilicon-containing material; and a portion of said ions in at least oneof said plurality of implantation steps is of a type that does notsubstantially alter the electrical properties of the silicon-containingmaterial; maintaining the semiconductor substrate within a temperaturerange after said implanting of ions; and etching the silicon-containingmaterial with an etchant containing tetramethyl ammonium hydroxide(TMAH) having a TMAH concentration in a range from about 1 weightpercent to about 10 weight percent so as to remove saidsilicon-containing material from the second portion at a materialremoval rate that is at least about 20 times greater than the materialremoval rate from the first portion, wherein the implanted ions in thesilicon-containing material are not substantially diffused prior toetching the silicon-containing material.
 11. A method of selectivelyremoving material from a semiconductor substrate, comprising: forming amask over a material located on a semiconductor substrate to form anunmasked and a masked portions thereof, wherein the masked portion ofthe material is masked by said mask, and the unmasked portion of thematerial is not substantially masked by the mask; implanting into theunmasked portion of the material a plurality of atomic particles of atype that is present in the masked portion of the material, such thatthe unmasked portion of the material has implanted therein atomicparticles at a concentration that is greater than the concentration ofsaid atomic particles in the masked portion of the material; removingthe mask from the masked portion; and removing said material from themasked portion at a material removal rate that is greater than thematerial removal rate from the unmasked portion.
 12. A method ofselectively removing material from a semiconductor substrate,comprising: forming a mask over a silicon-containing material located ona semiconductor substrate to form an unmasked and a masked portionsthereof, wherein the masked portion of the material is masked by saidmask, and the unmasked portion of the material is not substantiallymasked by the mask; directionally implanting ions into thesilicon-containing material such that said ions are implanted beneathsaid mask within said masked portion, and so as to form therein: an ionconcentration range greater than about 1×10¹⁸ ions per cm³ in saidunmasked portion; and a substantially lower ion concentration in saidmasked portion; removing the masking substrate that masks the maskedportion; and implanting ions into the unmasked portion of thesilicon-containing material such that the unmasked portion of thesilicon-containing material has implanted therein ions at aconcentration that is greater than the concentration of said ions thatare implanted in the masked portion of the silicon-containing material;removing the mask from the masked portion; and exposing thesilicon-containing material to a solution containing tetramethylammonium hydroxide (TMAH) in a concentration range from about 1 weightpercent to about 10 weight percent to remove the masked portion at amaterial removal rate that is greater than the material removal rate ofthe unmasked portion.
 13. A method of forming an interconnect structureon a semiconductor substrate, comprising: forming an electricallyconductive silicon-containing material upon a plurality of raisedstructures, each said raised structure projecting from a chargeconducting region, each said charge conducting region being situatedbetween raised structures and within a semiconductor substrate;planarizing the electrically conductive silicon-containing material toform thereon a planar surface that is substantially co-planar with atleast a planar surface on the raised structures; implanting ions intosaid electrically conductive silicon-containing material to form thereina first and a second portions, the first portion having a concentrationof said ions that is greater than the concentration of said ions in saidsecond portion; and removing said electrically conductivesilicon-containing material from the second portion at a materialremoval rate that is greater than the material removal rate of the firstportion, wherein at least one interconnect structure is formed, eachsaid interconnect structure comprising said first portion of saidelectrically conductive silicon-containing material, and each saidinterconnect structure being located on one of said charge conductingregions within said semiconductor substrate.
 14. A method of forming acapacitor storage node on a semiconductor substrate, comprising: formingan electrically conductive silicon-containing material located upon aplurality of insulated gate stacks situated upon a semiconductorsubstrate, wherein at least two insulated gate stacks have a chargeconducting region therebetween that is situated within the semiconductorsubstrate, said electrically conductive silicon-containing materialbeing formed upon said charge conducting region; forming a mask uponsaid electrically conductive silicon-containing material: adjacent toand above said charge conducting region; and above each said insulatedgate stack, wherein a masked portion of the electrically conductivesilicon-containing material is masked by said mask, and an unmaskedportion of the electrically conductive silicon-containing material isnot substantially masked by said mask; forming an additional layer ofsaid electrically conductive silicon-containing material over said mask;anisotropically etching said silicon-containing material from theadditional a layer of said electrically conductive silicon-containingmaterial over said mask to form therefrom at least one spacer extendingfrom said electrically conductive silicon-containing material adjacentto and in contact with said mask; implanting ions into the electricallyconductive silicon-containing material and the additional layer of saidelectrically conductive silicon-containing material so as to form: anion concentration in said unmasked portion; and an ion concentration insaid masked portion, wherein the implanted ion concentration in saidmasked portion is lower than the implanted ion concentration in saidunmasked portion; removing said mask upon said electrically conductivesilicon-containing material; and removing said silicon-containingmaterial from the unmasked portion at a material removal rate that isgreater than the material removal rate of the unmasked portion to formfrom said first implanted portion a capacitor storage node having saidat least one spacer extending therefrom.
 15. A method of forming aninterconnect structure on a semiconductor substrate in a CMOS processflow, comprising: providing a semiconductor substrate having a PMOSportion and an NMOS portion, the PMOS portion and the NMOS portion eachhaving a gate region formed therein; forming a PMOS mask over the PMOSportion; implanting ions into the semiconductor substrate adjacent tothe gate region of the NMOS portion to create an active region in thesemiconductor substrate adjacent to the gate region of the NMOS portion,wherein said PMOS mask substantially prevents said ions fromsubstantially implanting into the semiconductor substrate within saidPMOS portion; removing said PMOS mask over the PMOS portion; depositingan electrically conductive silicon-containing material over the PMOSportion and the NMOS portion; forming a CMOS mask upon said electricallyconductive silicon-containing material, and leaving an unmasked portionof said electrically conductive silicon-containing material that ispositioned above the active region in the semiconductor substrateadjacent to the gate region of the NMOS portion; implanting ions intothe unmasked portion of said electrically conductive silicon-containingmaterial to form therefrom a first portion thereof, and also forming asecond portion underlying the NMOS mask, the first portion having aconcentration of said ions implanted therein that is greater than theconcentration of ions implanted into the second portion; removing theCMOS mask upon said electrically conductive silicon-containing material;removing said electrically conductive silicon-containing material fromthe second portion at a material removal rate that is substantiallygreater than the material removal rate of the first portion, so as toremove the second portion and leave the first portion, said firstportion forming an interconnect structure; forming a NMOS mask upon saidinterconnect structure and upon said gate region of said NMOS portion,and leaving the semiconductor substrate adjacent to the gate region ofthe PMOS portion unmasked; and implanting ions into the unmaskedsemiconductor substrate adjacent to the gate region of the PMOS portionso as to form an active region therein.
 16. A method of forming a shapedstructure on a semiconductor substrate, the method comprising: providinga silicon-containing material extending from a surface on asemiconductor substrate, said silicon-containing material having thereona side surface; implanting ions into said side surface of saidsilicon-containing material at a non-orthogonal angle to said surface onsaid semiconductor substrate to form within said silicon-containingmaterial: a first portion; and a second portion, the first portionhaving a concentration of said ions implanted therein that is greaterthan the concentration of said ions that are implanted in the secondportion; and removing said silicon-containing material from the secondimplanted portion at a material removal rate that is greater than thematerial removal rate of the first implanted portion to form a shapedstructure extending from said surface on said semiconductor substrate.17. A method of forming a MOS surround-gate transistor on asemiconductor substrate, comprising: depositing a layer of asilicon-containing material on a surface of a semiconductor substrate;forming a mask on said layer of said silicon-containing material, saidmask having an opening therein below which extends an unmasked portionof said layer of said silicon-containing material, said opening in saidmask having a substantially circular cross-section; anisotropicallyetching said layer of said silicon-containing material to: substantiallyremove therefrom said unmasked portion and to form: a volume of saidsilicon-containing material extending from said planar surface of saidsemiconductor substrate, said volume of said silicon-containing materialhaving thereon a side surface; and a substantially cylindrical voiddefined by the side surface of said volume of said silicon-containingmaterial, said side surface being a continuous surface within said void;implanting ions into said side surface of said volume of saidsilicon-containing material at a non-orthogonal angle to said surface onsaid semiconductor substrate to form in said volume of saidsilicon-containing material: a first portion; and a second portion, thefirst portion having a concentration of said ions implanted therein thatis greater than the concentration of said ions implanted into the secondportion; removing said mask; removing said silicon-containing materialfrom the second portion at a material removal rate that is greater thanthe material removal rate of the first portion to form a gate regionextending from said surface on said semiconductor substrate, said gateregion having a outside surface opposite and substantially parallel tosaid side surface, both said outside and side surfaces of said gateregion being substantially circular in cross section, said side surfaceof said gate region defining a circular surface on said semiconductorsubstrate; forming an insulating spacer on both said outside and sidesurfaces of said gate region, each said insulating spacer extending toterminate at the semiconductor substrate; and doping the circularsurface on said semiconductor substrate to form a first source/drainregion and a second source/drain region, said second source/drain regionbeing separated from said first source/drain region by said gate regionand adjacent to the outside surface of said gate region.
 18. A method offorming a stacked capacitor storage node on a semiconductor substrate,the method comprising: providing a first volume of silicon-containingmaterial over a charge conducting region in a semiconductor substrate;forming an insulating layer over the first volume of silicon-containingmaterial; forming a first conical void extending through the insulatinglayer and the first volume of silicon-containing material to expose asurface on the charge conducting region, said first conical void beingdefined by an exposed inside surface; forming a second volume ofsilicon-containing material on the exposed inside surface of the firstconical void, thereby forming a second conical void within the firstconical void, the second conical void being defined by an exposedsurface on said second volume of silicon-containing material that issituated within said first conical void; implanting ions into theexposed surface on said second volume of silicon-containing materialthat is situated within said first conical void to form a portionthereof having said ions implanted therein; removing a portion of thesecond volume of silicon-containing material that is situated above theinsulating layer; removing the insulating layer; and removing at least aportion of the first volume of silicon-containing material at a materialremoval rate that is greater than the material removal rate of saidportion of said second volume of silicon-containing material having saidions implanted therein, whereby a stacked capacitor storage node isformed extending from the charge conducting region.
 19. A method offorming a shaped structure on a semiconductor substrate, comprising:forming a mask extending from a silicon-containing material located on asurface of a semiconductor substrate; implanting ions into thesilicon-containing material and beneath the mask into thesilicon-containing material so as to form therein a first and a secondportions, the first portion having a concentration of said ionsimplanted therein that is greater than the concentration of said ionsimplanted in the second portion, the ions being implanted at least oneangle that is non-orthogonal to the surface of the semiconductorsubstrate; removing said mask; and removing said silicon-containingmaterial from the second portion at a material removal rate that isgreater than the material removal rate of the first portion to form anopening in said silicon-containing material that terminates at saidsemiconductor substrate.
 20. A method of forming an interconnectstructure on a semiconductor substrate, comprising: providing anelectrically conductive silicon-containing material situated over acharge conducting region in a semiconductor substrate; masking theelectrically conductive silicon-containing material with a mask to forma masked portion of the electrically conductive silicon-containingmaterial situated above the charge conducting region, and an unmaskedportion of the electrically conductive silicon-containing materialsituated adjacent to the charge conducting region; removing part of theunmasked portion; implanting ions into the electrically conductivesilicon-containing material to form a first and a second portionstherein, the second portion being substantially located within themasked portion of the electrically conductive silicon-containingmaterial, the first portion having a concentration of said ions that isgreater than the concentration of said ions implanted in the secondportion; removing the mask; and removing said electrically conductivesilicon-containing material from the first portion at a material removalrate that is greater than the material removal rate of the secondportion to form an interconnect structure from said electricallyconductive silicon-containing material.
 21. A method of forming astorage node of a stacked capacitor on a semiconductor substrate,comprising: forming a lower layer in an electrically insulated openingsituated on a semiconductor substrate having a surface thereon; formingan intermediate layer upon the lower layer within the electricallyinsulated opening; forming an upper layer upon the intermediate layerwithin the electrically insulated opening, the upper, intermediate, andlower layers comprising a silicon-containing material, the upper andlower layers being doped with an impurity, and the intermediate layerbeing substantially undoped; implanting ions through the upper layerinto a segment of the intermediate layer that is substantially parallelto the surface on the semiconductor substrate and that is located withinthe opening, so as to form a first and a second portion of said segment,the first portion having a concentration of said ions that is greaterthan the concentration of said ions implanted in the second portion; andremoving said silicon-containing material from within said opening thatis substantially unimplanted with said ions and that is not doped withan impurity, said removing being performed at a material removal ratethat is greater than the material removal rate of saidsilicon-containing material within said opening that is implanted withsaid ions and that is doped with said impurity, so as to form a storagenode of a stacked capacitor that includes at least of portion of theupper and lower layers, and the first portion of said segment of theintermediate layer.
 22. An electrical device including a storage node ofa stacked capacitor, comprising: a semiconductor substrate having anelectrically conductive region therein, said semiconductor substratehaving a surface thereon; a pair of insulated gate stacks extending fromsaid surface of said semiconductor substrate; an electrically conductiveplug in contact with and between said pair of insulated gate stacks andextending from said electrically conductive region within saidsemiconductor substrate; a lower silicon-containing layer in contactwith said electrically conductive plug and having a bottom sectionsubstantially parallel to said surface of said semiconductor substrate,said bottom section being in contact with said electrically conductiveplug and terminating at a side section of said lower silicon-containinglayer that extends substantially orthogonally to said surface of saidsemiconductor substrate; an intermediate silicon-containing layer thatis situated substantially parallel to said surface of said semiconductorsubstrate, upon said bottom section of said lower silicon-containinglayer, and extending less than a distance to the side section of saidlower silicon-containing layer; and an upper silicon-containing layerupon said intermediate silicon-containing layer, and having a bottomsection substantially parallel to said surface of said semiconductorsubstrate, said bottom section of said upper silicon-containing layerterminating at a side section of said upper silicon-containing layerthat extends substantially orthogonally to said surface of saidsemiconductor substrate, wherein said side sections of said upper andlower silicon-containing layers are physically separated, whereby saidlower, intermediate, and upper silicon-containing layers form a storagenode of a stacked capacitor.
 23. A method of forming a storage node of astacked capacitor on a semiconductor substrate, comprising: forming anopening in an insulating layer situated on a surface of a semiconductorsubstrate, the opening extending from a top surface of said insulatinglayer to an exposed surface on a charge conducting region within saidsemiconductor substrate, said opening having a side surface on saidinsulating layer; forming a layer of a silicon-containing material onthe side surface of the insulating layer within the opening and uponsaid exposed surface on said charge conducting region, such that saidlayer does not fill the opening; implanting ions to a depth within thelayer of the silicon-containing material in the opening to form thereina first portion and a second portion, the first portion having aconcentration of said ions that is greater than the concentration ofsaid ions implanted in the second portion; filling the opening with amasking material; planarizing the insulating layer so as to remove aportion of the layer of the silicon-containing material that is situatedoutside of the opening in the insulating layer; removing the maskingmaterial within the opening; and removing said silicon-containingmaterial from the second portion at a material removal rate that isgreater than the material removal rate of the first portion to formsubstantially from said portion of the layer of the silicon-containingmaterial a storage node of a stacked capacitor on the semiconductorsubstrate, said storage node having a surface thereon that issubstantially orthogonal to the surface of said semiconductor substrateand is substantially parallel to and physically separated from said sidesurface on said insulating layer within said opening.
 24. A method offorming a shaped structure on a semiconductor substrate, comprising:forming a first mask on a top surface of a silicon-containing materialsituated on a surface of a semiconductor substrate, wherein a maskedportion of the silicon-containing material is masked by said first mask,and an unmasked portion of the silicon-containing material is notsubstantially masked by said mask; implanting ions into thesilicon-containing material within a first range extending from the topsurface of said silicon-containing material to the semiconductorsubstrate to form therein: an ion concentration of said implanted ionsin said unmasked portion; and an ion concentration of said implantedions in said masked portion that is lower than said ion concentration ofsaid unmasked portion; removing the first mask; forming a second maskover the silicon-containing material located on the semiconductorsubstrate, wherein the unmasked portion of the silicon-containingmaterial is substantially masked by said second mask, and the maskedportion of the silicon-containing material is substantially unmasked bysaid second mask; implanting ions into the silicon-containing materialto a second range extending from the top surface of saidsilicon-containing material to a level above the semiconductor substrateto form therein: a first ion implanted portion within said secondselected range; and a second ion implanted portion extending from saidfirst ion implanted portion to said surface on said semiconductorsubstrate and having an ion concentration of said implanted ions that islower than the ion concentration of said first ion implantated portion,wherein said first ion implanted portion of said masked portion hasabout the same ion concentration as that of the unmasked portion and thesecond ion implanted portion has an ion concentration of said implantedions that is lower than that of the first ion implanted portion;removing the second mask; and removing said silicon-containing materialfrom the unmasked portion and the first ion implanted portion of saidmasked portion at a material removal rate that is greater than thematerial removal rate of the second ion implanted portion of the maskedportion, to form a shaped structure substantially comprising: said firstion implanted portion of said masked portion; and said unmasked portion,wherein said first ion implanted portion of said masked portion is incontact with said unmasked portion.
 25. A method of forming a structurein a semiconductor substrate, comprising: forming a trench in asemiconductor substrate, said trench being defined by a sidewall on saidsemiconductor substrate that extends below a top surface of saidsemiconductor substrate; implanting ions into the sidewall on saidsemiconductor substrate through the trench to form in said semiconductorsubstrate: a first portion; and a second portion, the first portionhaving a ion concentration of said implanted ions that is greater thanthe ion concentration of said implanted ions in the second portion; andremoving the first portion at a material removal rate that is greaterthan the material removal rate of the second portion, wherein the volumeof said trench is defined by said sidewall on said semiconductorsubstrate.
 26. A method of selectively forming a layer of asilicon-containing material on an exposed horizontal surface of asemiconductor substrate, comprising: forming a raised structureextending from a surface on a semiconductor substrate, said raisedstructure having thereon a top surface substantially parallel to saidsurface on the semiconductor substrate and a lateral surfacesubstantially orthogonal to said surface on the semiconductor substrate;forming a layer of a silicon-containing material upon the surface of thesemiconductor substrate and over the top and lateral surfaces of saidraised structure; implanting ions into the layer of thesilicon-containing material to form therein a first and a secondportions, said ions being implanted substantially orthogonal to thesurface of the semiconductor substrate, said first portion beingsubstantially on the top surface of the raised structure and on thesurface of the semiconductor substrate distal of said raised structure,said second portion being substantially on said lateral surface and onsaid surface of semiconductor substrate proximal said raised structure;removing said silicon-containing material from the second portion at amaterial removal rate that is greater than the material removal rate ofthe first portion.
 27. A method of forming an interconnect line on asemiconductor substrate, comprising: forming a silicon-containingmaterial on a surface of a semiconductor substrate; forming a first maskover the silicon-containing material on the semiconductor substrate,wherein a masked portion of the silicon-containing material is masked bysaid first mask, and an unmasked portion of the silicon-containingmaterial is not substantially masked by said first mask; implanting ionsinto the silicon-containing material substantially orthogonally to thesurface on the semiconductor substrate so as to form therein: an ionconcentration of said implanted ions in said unmasked portion; and anion concentration of said implanted ions in said masked portion that islower than the ion concentration of said unmasked portion; removing thefirst mask; forming a second mask upon the silicon-containing materialon the semiconductor substrate, wherein the second masked substratedefines a masked area on a top surface of the silicon-containingmaterial on the semiconductor substrate, the masked area including theunmasked portion of the silicon-containing material; anisotropicallyremoving said silicon-containing material at a material removal ratesuch that the material removal rate is greater for saidsilicon-containing material having a lower ion concentration than forthe silicon-containing material having a higher ion concentration; andremoving said second mask, whereby an interconnect structure comprisingsaid silicon-containing material remains on said semiconductorsubstrate, and said interconnect structure has a perimeter substantiallythe same as the perimeter of the masked area.
 28. A method of forming aninterconnect line on a semiconductor substrate, comprising: forming asilicon-containing material on a surface of a semiconductor substrate;forming a first mask over the silicon-containing material on thesemiconductor substrate, wherein a masked portion of thesilicon-containing material is masked by said first mask, and anunmasked portion of the silicon-containing material is not substantiallymasked by said first mask; implanting ions into the silicon-containingmaterial substantially orthogonally to the surface on the semiconductorsubstrate so as to form therein: an ion concentration of said implantedions in said unmasked portion; and an ion concentration of saidimplanted ions in said masked portion that is lower than the ionconcentration of said unmasked portion; removing the first mask; forminga second mask upon the silicon-containing material on the semiconductorsubstrate, wherein the second masked substrate defines a masked area ona top surface of the silicon-containing material on the semiconductorsubstrate, the masked area having a perimeter and including the unmaskedportion of the silicon-containing material; anisotropically removingsaid silicon-containing material at a material removal rate such thatthe material removal rate is greater for said silicon-containingmaterial having a lower ion concentration than for thesilicon-containing material having a higher ion concentration, andwherein there is formed a lateral surface on the silicon-containingmaterial on the semiconductor substrate that extends from the topsurface of the silicon-containing material on the semiconductorsubstrate to the semiconductor substrate; implanting ions into thelateral surface of the silicon-containing material, the ions beingimplanted at least one angle that is non-orthogonal to the surface ofthe semiconductor substrate so as to form therein: an ion concentrationof said implanted ions in a first implanted region that is outside ofthe perimeter of the masked area, and that is inside of and proximal tothe perimeter of the masked area and beneath the masked area; and an ionconcentration of said implanted ions in a second implanted region thatis beneath the masked area and distal of the perimeter of said maskedarea, wherein said first and second implanted regions substantiallyextend from the top surface of the silicon-containing material on thesemiconductor substrate to the semiconductor substrate, and wherein theion concentration of the first implanted region is higher than that ofthe second implanted region; removing the second mask; removing saidsilicon-containing material from the second implanted region at amaterial removal rate that is greater than the material removal rate ofthe first implanted region, and removing said silicon-containingmaterial from the masked portion at a material removal rate that isgreater than the material removal rate of the unmasked portion, wherebythere is formed an interconnect line from said silicon-containingmaterial on the semiconductor substrate.